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Degradation of AlGaN-based metal-semiconductor-metal photodetectors
/en/research/publications/degradation-of-algan-based-metal-semiconductor-metal-photodetectors
The degradation of AlGaN-based metal-semiconductor-metal photodetectors under UV illumination has been studied. Oxidation triggered by the presence of moisture and mobile carriers at the…
High power UVB light emitting diodes with optimized n-AlGaN contact layers
/en/research/publications/high-power-uvb-light-emitting-diodes-with-optimized-n-algan-contact-layers
The influence of the n-AlGaN contact layer thickness and doping profile on the efficiency, operating voltage and lifetime of 310 nm LEDs has been investigated. Increasing the n-contact layer…
Impact of intermediate high temperature annealing on the properties of AlN/sapphire templates grown by metalorganic vapor phase epitaxy
/en/research/publications/impact-of-intermediate-high-temperature-annealing-on-the-properties-of-alnsapphire-templates-grown-by-metalorganic-vapor-phase-epitaxy
In this work, we investigate AlN/sapphire templates grown by metalorganic vapor phase epitaxy (MOVPE) subjected to an intermediate high temperature annealing (HTA) step at different AlN film…
Traceable Coplanar Waveguide Calibrations on Fused Silica Substrates up to 110 GHz
/en/research/publications/traceable-coplanar-waveguide-calibrations-on-fused-silica-substrates-up-to-110-ghz
In this paper, we present a comprehensive uncertainty budget for on-wafer S-parameter measurements of devices on a custom-built fused silica wafer, including instrumentation errors, connector…
Upconversion spectral response tailoring using fanout QPM structures
/en/research/publications/upconversion-spectral-response-tailoring-using-fanout-qpm-structures
In this Letter, a novel technique for independent control of the phase-matched center wavelength and bandwidth (BW) is demonstrated for upconversion detection in the 2-4 µm range using a…
Characterization and comparison between two coupling concepts of four-wavelength monolithic DBR ridge waveguide diode laser at 970 nm
/en/research/publications/characterization-and-comparison-between-two-coupling-concepts-of-four-wavelength-monolithic-dbr-ridge-waveguide-diode-laser-at-970-nm
Compact laser sources emitting at multiple wavelengths from a single aperture are interesting in a multiple of applications. In this work, we characterize and compare two concepts of four-arm…
Compact Diode Laser-Based Dual-Wavelength Master Oscillator Power Amplifier at 785 nm
/en/research/publications/compact-diode-laser-based-dual-wavelength-master-oscillator-power-amplifier-at-785nbspnm
A compact, micro integrated, diode laser-based dual-wavelength master oscillator power amplifier at 785 nm is presented. Laser emission from a Y-branch distributed Bragg reflector laser is…
Technology for D-band/G-band ultra capacity layer
/en/research/publications/technology-for-d-bandg-band-ultra-capacity-layer
The bands above 100 GHz offer outstanding potentiality for fixed wireless communications, matching the capacity requirements of future mobile networks backhaul in dense urban scenarios. However,…
Reconfigurable GaN Digital Tx Applying BST Bandpass Filter
/en/research/publications/reconfigurable-gan-digital-tx-applying-bst-bandpass-filter
The paper presents the first tunable GaN-based digital transmitter chain for 0.8-1.8 GHz range, suitable for MIMO systems in software-defined radio (SDR) installations. The demonstrator includes…
A Reconfigurable Modulator for Digital Outphasing Transmitters
/en/research/publications/a-reconfigurable-modulator-for-digital-outphasing-transmitters
This paper presents the next development stage of baseband-transparent modulators for digital microwave amplifiers. A modulator, used for encoding the baseband signal into a bitstream suitable for…