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Development of slanted gates for AlGaN/GaN HEMTs

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Two new process sequences for the formation of slanted gates have been developed at the FBH – the advanced gate modules are ready for integration into GaN-based HEMT and MMIC technology. They allow…

Short-channel effect-free 100 nm Ka-band transistors

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The FBH has developed the key gate technology for GaN power amplifier MMICs and tested epitaxial layer structures adjusted to the short gates. An implementation of these modules in the existing GaN…

Fresh from the press: frequent 05_2013, topic "UV-LEDs"

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The current frequent issue frequent with special focus on "ultraviolet light from LEDs" has just been published.

Differential GaN-power oscillator for compact high power 2.45 GHz generators

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New applications in the fields of microwave heating and plasma technology require compact generators at power levels from 10 W to 100 W. For these demands a new power oscillator with…

IEEE International Electron Devices Meeting

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Conference on semiconductor and electronic device technology, design, manufacturing, physics, and modeling.

Epitaxie of III/V semiconductors

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Workshop of the German Society for Crystal Growing and Epitaxy e.V. (DGKK).

Plasmonic GaN Detectors and Emitters for THz Frequencies

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The FBH has started several activities in the field of emitters and detectors at THz frequencies using GaN HEMTs. This frequency range offers a variety of applications in biology, medicine, and…

FaBriDi - Fiber coupled high brilliance diode lasers

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DBR tapered diode lasers are ideally suited as pump lasers and for frequency conversion. However, the use of this laser type is challenging due to its astigmatic laser beam. The FBH works therefore…

Monolithische Zwei-Wellenlängen DBR-Laser für sensorische Anwendungen

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Dr. Bernd Sumpf, Dr. Jörg FrickeFerdinand-Braun-Institut, Berlin

Die Vorhersage der Einkopplung in Low Mode Fasern anhand gemessener Wigner-Verteilungen

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Mirko FischerFerdinand-Braun-Institut, Berlin