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Highly Efficient D-Band Fundamental Frequency Source Based on InP-DHBT Technology
/en/research/publications/highly-efficient-d-band-fundamental-frequency-source-based-on-inp-dhbt-technology
Local oscillator signal generation with low phasenoise is an important topic for future communications systems operating in D-band and beyond. This paper presents a D-band fundamental reflection-type…
Highly Compact GaN-based All-Digital Transmitter Chain Including SPDT Switch for Massive MIMO
/en/research/publications/highly-compact-gan-based-all-digital-transmitter-chain-including-spdt-switch-for-massive-mimo
This paper presents a fully digital transmitter chain from baseband to antenna, including a modulator, a truly digital (i.e. switch mode) microwave power amplifier and a transmit / receive switch.…
Dynamic Over-Voltage Operation of a Discrete-Level Supply-Modulated GaN-based RF PA
/en/research/publications/dynamic-over-voltage-operation-of-a-discrete-level-supply-modulated-gan-based-rf-pa
In this paper an investigation for increasing the peak output power of a GaN-based RF power amplifier (PA) by dynamically operating it at a higher supply voltage is presented. The PA is operated with…
Versatility, Bandwidth and Efficiency: Digital GaN-Based Switch-Mode Supply Modulators
/en/research/publications/versatility-bandwidth-and-efficiency-digital-gan-based-switch-mode-supply-modulators
In this paper the versatility of ultra-fast and, at the same time, high-power capable digital electronics is demonstrated. An electronic switch based on 0.25µm GaN HEMT technology, originally…
Analysis of Dissipated Power in Envelope Amplifier Output Filters
/en/research/publications/analysis-of-dissipated-power-in-envelope-amplifier-output-filters
The paper addresses power dissipation within the output filter of a buck-converter-based envelope amplifier (EA) and its effect on the overall envelope tracking (ET) system efficiency. For a…
Impact of Substrate Modes on mTRL-Calibrated CPW Measurements in G Band
/en/research/publications/impact-of-substrate-modes-on-mtrl-calibrated-cpw-measurements-in-g-band
On-wafer measurements at microwave and mm-wave frequencies require reliable calibration processes to deduct unwanted effects such as the impact of probe, the wafer environment, and the…
Nonlinear Three-Port Characterization of a Class-G Supply Modulated RF Power Amplifier using a Nonlinear Vector Network Analyzer
/en/research/publications/nonlinear-three-port-characterization-of-a-class-g-supply-modulated-rf-power-amplifier-using-a-nonlinear-vector-network-analyzer
A three-port nonlinear characterization system for 5G Envelope Tracking Power Amplifiers (ET PAs) is presented in this paper. The system allows measurement of wideband injected and reflected Radio…
A High-Efficiency GaN Transistor Module with Thick-Film BST-Based Tunable Matching Network
/en/research/publications/a-high-efficiency-gan-transistor-module-with-thick-film-bst-based-tunable-matching-network
Thick-film barium-strontium-titanate varactors package-integrated with GaN HEMTs are high-efficiency and robust tunable devices that enable frequency agility and efficiency optimization. The tunable…
A Highly Efficient Ultrawideband Traveling-Wave Amplifier in InP DHBT Technology
/en/research/publications/a-highly-efficient-ultrawideband-traveling-wave-amplifier-in-inp-dhbt-technology
This letter presents a 1 to > 110-GHz ultrawideband traveling-wave amplifier (TWA) based on 500-nm transferred-substrate InP double-heterojunction bipolar transistor technology. The HBT cells…
Investigation of atomic layer deposition methods of Al2O3 on n-GaN
/en/research/publications/investigation-of-atomic-layer-deposition-methods-of-al2o3-on-n-gan
In this work, three atomic layer deposition (ALD) approaches are used to deposit an Al2O3 gate insulator on n-GaN for application in vertical GaN power switches: thermal ALD (ThALD), plasma-enhanced…