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Energy-sources of the future: novel diode lasers for ultra-high power laser applications
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The FBH will present the latest results from their project CryoLaser at CLEO 2013. CryoLaser has been selected as a "hot topic" for the central press event at the renowned technical conference in San…
Single-mode lasers at 1120 nm with electrical temperature-tuning of the internal grating
/en/research/research-news/single-mode-lasers-at-1120-nm-with-electrical-temperature-tuning-of-the-internal-grating
FBH currently develops ridge-waveguide diode lasers emitting at 1120 nm with integrated gratings within the Yellow project. By means of frequency doubling the wavelength shall be bisected to 560 nm -…
Practical microsystems technology
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Apply now for the 8th ZEMI Microsystems Summer School!
Design, Fabrication, and Characterization of Miniaturized AuSn Flip-Chip Transitions up to 110 GHz
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Miniaturized flip-chip mounting is a very attractive packaging solution for high-frequency applications in the mm-wave through to the sub-THz spectrum. Current research results from the FBH confirm…
Best Paper – awarded by Journal of Electronic Materials
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An FBH publication was honored at this year's Electronics Materials Conference (26.-28.06.2013) in South Bend, Indiana (USA) with the Best Paper Award. The publication deals with tensile strain…
2. Berlin WideBaSe Conference
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Apply now to experience the comprehensive program on wide bandgap semiconductors.
10. International Conference on Nitride Semiconductors
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FBH presents several lectures on materials and devices based on group III-nitride semiconductors.
European Materials Research Society - Fall Meeting
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FBH presents an invited lecture.
Überwachung der anderen Art: Pflanzen-Monitoring lückenlos und nutzerfreundlich
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Im europäischen Netzwerk USER-PA haben sich internationale Partner aus verschiedenen Forschungsdisziplinen zusammengetan, um eine zukunftsfähige und nachhaltige technologische Plattform für den…
Improved vertical isolation of GaN-based high-voltage transistors for power electronics application
/en/research/research-news/improved-vertical-isolation-of-gan-based-high-voltage-transistors-for-power-electronics-application
GaN-based high-voltage switching transistors enable compact and efficient power converters due to the low area-specific on-state resistance for a given blocking strength and the particular low…