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Dynamic drift effects in GaN power transistors: Correlation to device technology and mission profile
/en/research/publications/dynamic-drift-effects-in-gan-power-transistors-correlation-to-device-technology-and-mission-profile
GaN devices for high voltage power switching are facilitating smaller, more light-weighted and more efficient converter systems. In order to provide an optimum design of such systems it is necessary…
Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation
/en/research/publications/selective-area-isolation-of-beta-ga2o3-using-multiple-energy-nitrogen-ion-implantation
In this study, we report on the application of multiple energy nitrogen ion implantation for the electrical isolation of electronic devices on monoclinic β-Ga2O3. By the introduction of…
Rapid and adjustable shifted excitation Raman difference spectroscopy using a dual-wavelength diode laser at 785 nm
/en/research/publications/rapid-and-adjustable-shifted-excitation-raman-difference-spectroscopy-using-a-dual-wavelength-diode-laser-at-785nbspnm
In this paper, we present rapid and adjustable shifted excitation Raman difference spectroscopy (SERDS). A dual-wavelength diode laser emitting at 785 nm is used as the excitation light source.…
20 GHz Clock Frequency ROM-Less Direct Digital Synthesizer Comprising Unique Phase Control Unit in 0.25 µm SiGe Technology
/en/research/publications/20-ghz-clock-frequency-rom-less-direct-digital-synthesizer-comprising-unique-phase-control-unit-in-025-um-sige-technology
This paper presents work on a 20 GHz ROM-less direct digital synthesizer (DDS) with 12-bit phase and 6-bit amplitude resolution in a 0.25µm SiGe technology having ft/fmax 180/220GHz. The…
A Hetero-Integrated W-Band Transmitter Module in InP-on-BiCMOS Technology
/en/research/publications/a-hetero-integrated-w-band-transmitter-module-in-inp-on-bicmos-technology
This paper presents a W-band hetero-integrated transmitter module using InP-on-BiCMOS technology. It consists of a Phase Locked Loop (PLL) in 0.25 µm BiCMOS technology and a frequency…
An Ultra-broadband Low-Noise Distributed Amplifier in InP DHBT Technology
/en/research/publications/an-ultra-broadband-low-noise-distributed-amplifier-in-inp-dhbt-technology
This paper reports an ultra-wideband low-noise amplifier in a transferred-substrate InP DHBT technology. The wideband characteristics are obtained by using a distributed topology with cascode unit…
Highly Efficient D-Band Fundamental Frequency Source Based on InP-DHBT Technology
/en/research/publications/highly-efficient-d-band-fundamental-frequency-source-based-on-inp-dhbt-technology
Local oscillator signal generation with low phasenoise is an important topic for future communications systems operating in D-band and beyond. This paper presents a D-band fundamental reflection-type…
Highly Compact GaN-based All-Digital Transmitter Chain Including SPDT Switch for Massive MIMO
/en/research/publications/highly-compact-gan-based-all-digital-transmitter-chain-including-spdt-switch-for-massive-mimo
This paper presents a fully digital transmitter chain from baseband to antenna, including a modulator, a truly digital (i.e. switch mode) microwave power amplifier and a transmit / receive switch.…
Dynamic Over-Voltage Operation of a Discrete-Level Supply-Modulated GaN-based RF PA
/en/research/publications/dynamic-over-voltage-operation-of-a-discrete-level-supply-modulated-gan-based-rf-pa
In this paper an investigation for increasing the peak output power of a GaN-based RF power amplifier (PA) by dynamically operating it at a higher supply voltage is presented. The PA is operated with…
Versatility, Bandwidth and Efficiency: Digital GaN-Based Switch-Mode Supply Modulators
/en/research/publications/versatility-bandwidth-and-efficiency-digital-gan-based-switch-mode-supply-modulators
In this paper the versatility of ultra-fast and, at the same time, high-power capable digital electronics is demonstrated. An electronic switch based on 0.25µm GaN HEMT technology, originally…