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Diameter evolution of selective area grown Ga-assisted GaAs nanowires
/en/research/publications/diameter-evolution-of-selective-area-grown-ga-assisted-gaas-nanowires
Tapering of vapour-liquid-solid (VLS) grown nanowires (NWs) is a widespread phenomenon resulting from dynamics of the liquid droplet during growth and direct vapour-solid (VS) growth on the sidewall.…
Asynchronous sampling terahertz time-domain spectroscopy using semiconductor lasers
/en/research/publications/asynchronous-sampling-terahertz-time-domain-spectroscopy-using-semiconductor-lasers
Asynchronous optical sampling terahertz time-domain spectroscopy using semiconductor laser-based ultra-short pulse sources is demonstrated. A pair of hybridly mode-locked edge-emitting external…
Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm
/en/research/publications/lifetime-behavior-of-laser-diodes-with-highly-strained-ingaas-qws-and-emission-wavelength-between-1120nbspnm-and-1180nbspnm
Highly strained InxGa1-xAs QWs are commonly used for laser diodes in the wavelength range beyond 1100 nm, but they suffer from strain induced formation of defects. The effect of different laser…
Picosecond Pulse Generation and Pulse Train Stability of A Monolithic Passively Mode-Locked Semiconductor Quantum-Well Laser at 1070 nm
/en/research/publications/picosecond-pulse-generation-and-pulse-train-stability-of-a-monolithic-passively-mode-locked-semiconductor-quantum-well-laser-at-1070-nm
We experimentally study the pulse generation and the pulse train timing and amplitude stability of a monolithic passively mode-locked multisection quantum-well semiconductor laser. The laser emits a…
Superconductive coupling in tailored [(SnSe)1+δ]m(NbSe2)1 multilayers
/en/research/publications/superconductive-coupling-in-tailored-snse1-deltamnbse21-multilayers
Ferecrystals are a new artificially layered material system, in which the individual layers are stacked with monolayer precision and are turbostratically disordered. Here, the superconducting…
GaN-based digital transmitter architectures for 5G
/en/research/publications/gan-based-digital-transmitter-architectures-for-5g
Fully digital transmitter chains are an important step towards the software-defined radio. Digital amplification is obtained by encoding the baseband signal into a binary bit stream and amplifying…
Novel approach for E/D transistors integration in GaN HEMT technology
/en/research/publications/novel-approach-for-ed-transistors-integration-in-gan-hemt-technology
The purpose of this work is to introduce a novel concept for integrating enhancement mode (E-mode) and depletion mode (D-mode) AlGaN/GaN HEMTs in the same fabrication process. Unlike existing E/D…
Effects Degrading Accuracy of CPW mTRL Calibration at W Band
/en/research/publications/effects-degrading-accuracy-of-cpw-mtrl-calibration-at-w-band
On-wafer measurements of a Device Under Test (DUT) can yield accurate results only if the properties of the measurement environment are well defined and unwanted effects can be removed from the data.…
Load Tuning Assisted Discrete-Level Supply Modulation Using BST and GaN Devices for Highly Efficient Power Amplifiers
/en/research/publications/load-tuning-assisted-discrete-level-supply-modulation-using-bst-and-gan-devices-for-highly-efficient-power-amplifiers
The combination of supply modulation and load tuning using highly efficient GaN components and very linear thin-film barium-strontium-titanate varactors constitutes an agile and reconfigurable…
Digital Sequential PA for Flexible Efficiency Tuning Over Wide Power Back-Off Range
/en/research/publications/digital-sequential-pa-for-flexible-efficiency-tuning-over-wide-power-back-off-range
This paper presents the first digitally designed sequential power amplifier (DSPA) module setup for the 900 MHz range. The demonstrator applies an H-bridge (peak PA) as well as a single-ended…