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Search results 1201 until 1210 of 1768

Low resistivity AlGaN:Si for deep UV-C light emitters

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One of the key challenges in developing deep UV LEDs and laser diodes is the realization of low resistivity n- and p-type AlGaN layers with high aluminum mole fraction. Due to layer optimizations at…

FBH at Photonics West

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At the world-wide leading fair for optics and photonics, the Ferdinand-Braun-Institut presents its research results in various lectures and posters.

On-Wafer Measurement of Terahertz Devices and Components

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Robert M. WeikleUniversity of Virginia

UV-C AlGaN photodetectors with cut-off wavelength below 220 nm

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In many applications, UV radiation is monitored in a certain wavelength range by photodetectors (PD). We have extended our studies on UV photodetectors to devices that are only sensitive in the lower…

AlGaN/GaN HFET Technology at FBH: Fabrication of Power Bars and MMICs

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Sergey A. ShevchenkoFerdinand-Braun-Institut, Berlin

K and Q-Band GaN HEMTs for space applications

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Konstantin OsipovFerdinand-Braun-Institut, Berlin

FBH at Laser Optics

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Visit us in hall 12 booth 405.

FBH at GeMiC 2014

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FBH scientists present new research results at the German Microwave Conference.

FBH publication selected as highlight by IOP Science

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The article of Horia Porteanu et.al. published in Plasma Sources Science and Technology last year has been selected by the journal’s Editors as a highlight of 2013. 

UV-B LEDs of high robustness and reliability

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In order to enhance the lifetime of currently available UV-B LEDs, extended stress tests of UV-B LEDs have been started at FBH to study the relevant degradation mechanisms in these devices - with…