Search
Rules for the search
- Only words with 2 or more characters are accepted
- Max 200 chars total
- Space is used to split words, "" can be used to search for a whole string (not indexed search then)
- AND, OR and NOT are prefix words, overruling the default operator
- +/|/- equals AND, OR and NOT as operators.
- All search words are converted to lowercase
A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology
/en/research/publications/a-175-ghz-bandwidth-high-linearity-distributed-amplifier-in-500-nm-inp-dhbt-technology
This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set…
Highly linear 90-170 GHz SPDT Switch with High Isolation for Fully Integrated InP Transceivers
/en/research/publications/highly-linear-90-170-ghz-spdt-switch-with-high-isolation-for-fully-integrated-inp-transceivers
This work reports a high-isolation SPDT switch realized in an 800-nm InP DHBT process. The circuit is based on shunt topology employing two cascaded shunt stages. This enhances the isolation while…
Thermally stable iridium contacts to highly doped p-In0:53Ga0:47As for indium phosphide double heterojunction bipolar transistors
/en/research/publications/thermally-stable-iridium-contacts-to-highly-doped-p-in053ga047as-for-indium-phosphide-double-heterojunction-bipolar-transistors
We report on surface pretreatment for ohmic contacts to p-doped In0.53Ga0.47As with improved thermal stability. It is found that the cleaning of In0.53Ga0.47As surface by ammonium sulfide or sulfuric…
Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes
/en/research/publications/current-induced-degradation-and-lifetime-prediction-of-310-nm-ultraviolet-light-emitting-diodes
The impact of operation current on the degradation behavior of 310 nm UV LEDs is investigated over 1000 h of stress. It ranges from 50 to 300 mA and corresponds to current densities…
A High-Sensitivity AlGaN/GaN HEMT Terahertz Detector With Integrated Broadband Bow-Tie Antenna
/en/research/publications/a-high-sensitivity-algangan-hemt-terahertz-detector-with-integrated-broadband-bow-tie-antenna
Many emerging applications in the terahertz (THz)frequency range demand highly sensitive, broadband detectors for room-temperature operation. Field-effect transistors with integrated antennas for THz…
Compact and robust diode laser system technology for dual-species ultracold atom experiments with rubidium and potassium in microgravity
/en/research/publications/compact-and-robust-diode-laser-system-technology-for-dual-species-ultracold-atom-experiments-with-rubidium-and-potassium-in-microgravity
We present a compact and robust distributed-feedback diode laser system architecture for ultracold atom experiments with 41K and 87Rb in a mobile setup operating at the ZARM drop tower in Bremen. Our…
Iodine Frequency Reference on a Sounding Rocket
/en/research/publications/iodine-frequency-reference-on-a-sounding-rocket
We build a self-contained optical absolute frequency reference at 1064 nm based on the rovibronic transition R(56)32-0 in molecular iodine and operate this instrument in space on a sounding…
Integrated Atomic Quantum Technologies in Demanding Environments: Development and Qualification of Miniaturized Optical Setups and Integration Technologies for UHV and Space Operation
/en/research/publications/integrated-atomic-quantum-technologies-in-demanding-environments-development-and-qualification-of-miniaturized-optical-setups-and-integration-technologies-for-uhv-and-space-operation-1
Employing compact quantum sensors in field or in space (e.g., small satellites) implies demanding requirements on components and integration technologies. Within our work on integrated sensors, we…
Semiconductor laser modules for precision spectroscopy applications in space
/en/research/publications/semiconductor-laser-modules-for-precision-spectroscopy-applications-in-space
The Ferdinand-Braun-Institute has been developing high-power, narrow-linewidth semiconductor lasers for precision spectroscopy applications in harsh environments for more than ten years. Starting…
A New Laser Technology for LISA
/en/research/publications/a-new-laser-technology-for-lisa
Within the European Space Agency (ESA) activity "Gravitational Wave Observatory Metrology Laser" we designed a laser head to fulfill the LISA laser requirements using a non-NPRO seed laser…