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Digital Microwave Power Amplifier with Energy Recovery
/en/research/publications/digital-microwave-power-amplifier-with-energy-recovery
The paper presents a digital microwave power amplifier (DPA) for the 900 MHz band which utilizes two GaN DPA MMICs, a wideband 180° hybrid coupler and a chargepump voltage-doubler rectifier to…
A 200 mW InP DHBT W-band Power Amplifier in Transferred-Substrate Technology with Integrated Diamond Heat Spreader
/en/research/publications/a-200-mw-inp-dhbt-w-band-power-amplifier-in-transferred-substrate-technology-with-integrated-diamond-heat-spreader
A power amplifier in 800 nm transferred-substrate InP DHBT technology is presented in this paper. The technology used in this work features an integrated diamond heat sink layer that has…
Wideband Tunable GaN HEMT Module Utilizing Thin-film BST Varactors for Efficiency Optimization
/en/research/publications/wideband-tunable-gan-hemt-module-utilizing-thin-film-bst-varactors-for-efficiency-optimization
This work covers the design and measurement of a low cost tunable impedance matching network (TMN) for highly linear and high power RF applications at telecommunication frequencies. A single…
A Three-Level Class-G Modulated 1.85 GHz RF Power Amplifier for LTE Applications with over 50% PAE
/en/research/publications/a-three-level-class-g-modulated-185-ghz-rf-power-amplifier-for-lte-applications-with-over-50-pae
A highly efficient three-level class-G modulated RF power amplifier (PA) is presented. The PA is designed to operate as downlink amplifier in the 1800-1900 MHz LTE-band. At 1.85 GHz the…
2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes
/en/research/publications/2d-layered-transport-properties-from-topological-insulator-bi2se3-single-crystals-and-micro-flakes
Low-field magnetotransport measurements of topological insulators such as Bi2Se3 are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such…
Nitride-Based UV-LEDs and Their Application
/en/research/publications/nitride-based-uv-leds-and-their-application
A wide range of applications utilize ultraviolet (UV) light in the UVB (280-320 nm) and UVC range (<280 nm). Among them are disinfection of water, air, and surfaces, sensing applications,…
Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices
/en/research/publications/study-of-damage-formation-and-annealing-of-implanted-iii-nitride-semiconductors-for-optoelectronic-devices
An n-GaN/n-AlGaN/p-GaN light emitting diode (LED) structure was implanted with Eu ions. High temperature high pressure annealing at 1400 °C efficiently decreases implantation damage and…
On the formation of cleaved mirror facets of GaN-based laser diodes - A comparative study of diamond-tip edge-scribing and laser scribing
/en/research/publications/on-the-formation-of-cleaved-mirror-facets-of-gan-based-laser-diodes-a-comparative-study-of-diamond-tip-edge-scribing-and-laser-scribing
The formation of cleaved mirror facets of GaN-based laser diodes on c-plane GaN substrates is investigated using either diamond-tip edge-scribing or laser scribing with a skip-and-scribe method. The…
Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar InxGa1-xN/GaN quantum wells
/en/research/publications/impact-of-inhomogeneous-broadening-on-optical-polarization-of-high-inclination-semipolar-and-nonpolar-inxga1-xngan-quantum-wells
We investigate the influence of inhomogeneous broadening on the optical polarization properties of high-inclination semipolar and nonpolar InxGa1-xN/GaN quantum wells. Different planar m-plane and…
High power surface-grating stabilized narrow-stripe broad area lasers with beam parameter product < 2 mm×mrad
/en/research/publications/high-power-surface-grating-stabilized-narrow-stripe-broad-area-lasers-with-beam-parameter-product-ltnbsp2nbspmmxmrad
Narrow-stripe (30 µm aperture) broad area lasers with monolithically integrated DFB-surface-gratings deliver 5 W optical output per emitter with 50% conversion efficiency, spectral width…