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Accurate frequency noise measurement of free-running lasers
/en/research/publications/accurate-frequency-noise-measurement-of-free-running-lasers
We present a simple method to accurately measure the frequency noise power spectrum of lasers. It relies on creating the beat note between two lasers, capturing the corresponding signal in the time…
Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al,In)GaN laser diodes
/en/research/publications/effect-of-quantum-well-non-uniformities-on-lasing-threshold-linewidth-and-lateral-near-field-filamentation-in-violet-alingan-laser-diodes
The lateral near field patterns and filamentation effects of gain guided broad area (Al,In)GaN-based laser diodes emitting around 415nm have been investigated. Diodes from the same laser bar, which…
High brightness photonic band crystal semiconductor lasers in the passive mode locking regime
/en/research/publications/high-brightness-photonic-band-crystal-semiconductor-lasers-in-the-passive-mode-locking-regime
High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm-2 sr-1…
Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors
/en/research/publications/effect-of-gate-trench-fabrication-technology-on-reliability-of-algangan-heterojunction-field-effect-transistors
A comparison of reliability by means of mean-time-to-failure (MTTF) determined from three-temperature accelerated life time tests for two groups of AlGaN/GaN heterojunction field effect transistors…
Epitaxial Growth of GaN on LiAlO2 Substrates
/en/research/publications/epitaxial-growth-of-gan-on-lialo2-substrates
Epitaxial Growth of GaN on LiAlO2 Substrates A. Mogilatenkoa,b a Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin,…
Combining SiGe BiCMOS and InP Processing in an on-top of Chip Integration Approach
/en/research/publications/combining-sige-bicmos-and-inp-processing-in-an-on-top-of-chip-integration-approach
Applications such as radar imaging and wideband communications are driving the research on millimeter-wave circuits. For some applications SiGe hetero junction bipolar transistors (HBTs) are limited…
The effect of a distinct diameter variation on the thermoelectric properties of individual Bi0.39Te0.61 nanowires
/en/research/publications/the-effect-of-a-distinct-diameter-variation-on-the-thermoelectric-properties-of-individual-bi039te061-nanowires
The reduction of the thermal conductivity induced by nano-patterning is one of the major approaches for tailoring thermoelectric material properties. In particular, the role of surface roughness and…
European GaN Device Technologies for Microwave and Power Switching Applications
/en/research/publications/european-gan-device-technologies-for-microwave-and-power-switching-applications
An overview on European GaN technologies towards high power microwave and high voltage power switching applications is presented. It contains a survey on the most important technological approaches,…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/en/research/publications/anisotropic-optical-properties-of-semipolar-algan-layers-grown-on-m-plane-sapphire
The valence band order of AlxGa1-xN is investigated experimentally by analyzing the anisotropic dielectric functions of semipolar (1122) AlGaN thin films grown on m-plane Al2O3. Point-by-point fitted…
High-voltage normally OFF GaN power transistors on SiC and Si substrates
/en/research/publications/high-voltage-normally-off-gan-power-transistors-on-sic-and-si-substrates
Transistors with 600 V blocking capability and low switching losses are needed for converting one-phase 230 V mains voltage to lower voltage levels in switch-mode power supplies. The…