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Multi-Octave GaN High Power Amplifier Using Planar Transmission Line Transformer
/en/research/publications/multi-octave-gan-high-power-amplifier-using-planar-transmission-line-transformer
In this work, design, implementation and experimental results of an efficient, high power and multi-octave GaN-HEMT power amplifier (PA) are presented. To overcome the low optimum source and load…
Two-Stage Harmonically Tuned 50W GaN-HEMT Wideband Power Amplifier
/en/research/publications/two-stage-harmonically-tuned-50w-gan-hemt-wideband-power-amplifier
In conjunction with suited terminations of harmonic load impedances, this paper contributes a systematic analysis and design for a high power, high efficiency and broadband GaN-HEMT power amplifier…
A 100 GHz Fundamental Oscillator with 25% Efficiency Based on Transferred-Substrate InP-DHBT Technology
/en/research/publications/a-100-ghz-fundamental-oscillator-with-25-efficiency-based-on-transferred-substrate-inp-dhbt-technology
A 96-GHz fixed-frequency fundamental oscillator with high efficiency is presented, realized using a transferred-substrate (TS) 0.8 µm InP-DHBT process. It delivers 9 dBm output power, with…
A 315 GHz Reflection-Type Push-Push Oscillator in InP-DHBT Technology
/en/research/publications/a-315-ghz-reflection-type-push-push-oscillator-in-inp-dhbt-technology
A 315-GHz reflection-type push-push oscillator is presented. It is realized using a 0.8 µm-emitter transferred-substrate (TS) InP-DHBT technology with an fmax of 320 GHz. The oscillator…
Response Time of VSWR Protection for GaN HEMT based Power Amplifiers
/en/research/publications/response-time-of-vswr-protection-for-gan-hemt-based-power-amplifiers
Protection against high voltage-standing-wave-ratios (VSWR) is of great importance in many power amplifier applications. Despite excellent thermal and voltage breakdown properties even gallium…
Development of K- and Ka-band High-Power Amplifier GaN MMIC Fabrication Technology
/en/research/publications/development-of-k-and-ka-band-high-power-amplifier-gan-mmic-fabrication-technology
In the present work, we compare two different embedded-gate technologies used for the fabrication of 150 nm AlGaN/GaN HEMTs intended for K- and Ka-band satellite communication applications. DC…
Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures
/en/research/publications/dominance-of-radiative-recombination-from-electron-beam-pumped-deep-uv-algan-multi-quantum-well-heterostructures
AlGaN-based multiple-quantum-well (MQW) heterostructures were irradiated with a pulsed electron beam. Excitation with a beam energy of 12 keV and a beam current of 4.4mA produced…
Dual-wavelength diode laser with electrically adjustable wavelength distance at 785 nm
/en/research/publications/dual-wavelength-diode-laser-with-electrically-adjustable-wavelength-distance-at-785-nm
A spectrally adjustable monolithic dual-wavelength diode laser at 785 nm as an excitation light source for shifted excitation Raman difference spectroscopy (SERDS) is presented. The spectral…
Increased diffraction efficiencies of DBR gratings in diode lasers with adiabatic ridge waveguides
/en/research/publications/increased-diffraction-efficiencies-of-dbr-gratings-in-diode-lasers-with-adiabatic-ridge-waveguides
The influence of the lateral layout on the diffraction efficiency of gratings in DBR lasers is presented. In this experimental study DBR ridge waveguide (RW) lasers with different ridge widths as…
Micro-Integrated External Cavity Diode Laser With 1.4-W Narrowband Emission at 445 nm
/en/research/publications/micro-integrated-external-cavity-diode-laser-with-14-w-narrowband-emission-at-445-nm
A compact external cavity diode laser module with 1.4-W narrowband emission at 445 nm is presented. A commercially available broad-area GaN-based laser diode is used as gain medium and a volume…