Search
Rules for the search
- Only words with 2 or more characters are accepted
- Max 200 chars total
- Space is used to split words, "" can be used to search for a whole string (not indexed search then)
- AND, OR and NOT are prefix words, overruling the default operator
- +/|/- equals AND, OR and NOT as operators.
- All search words are converted to lowercase
Characterization of Single-Shot Large-Signal Phenomena Using High-Speed Oscilloscopes
/en/research/publications/characterization-of-single-shot-large-signal-phenomena-using-high-speed-oscilloscopes
The use of fast real-time oscilloscopes allows the recording of single transient events at GHz frequencies in the large signal operation of electronic components. With sampling rates over…
Novel Approach to Trapping Effect Modeling Based on Chalmers Model and Pulsed S-Parameter Measurements
/en/research/publications/novel-approach-to-trapping-effect-modeling-based-on-chalmers-model-and-pulsed-s-parameter-measurements
This paper presents a novel approach to account for trapping effects in GaN HEMT devices. Recent works demonstrated good results relying on physics-based model enhancements. Unfortunately, none of…
Balanced G-Band Gm-Boosted Frequency Doublers in Transferred Substrate InP HBT Technology
/en/research/publications/balanced-g-band-gm-boosted-frequency-doublers-in-transferred-substrate-inp-hbt-technology
In this paper, balanced G-band Gm-boosted frequency doublers in transferred substrate (TS) InP HBT technology are reported for the first time. The Gm-boosted frequency doublers consist of a phase…
An Efficient W-Band InP DHBT Digital Power Amplifier
/en/research/publications/an-efficient-w-band-inp-dhbt-digital-power-amplifier-1
This paper presents for the first time a high-efficiency W-band power amplifier (PA), the design of which follows the digital PA (DPA) design concept. The PA is realized as MMIC in a 0.8 µm InP…
GaN Laser Driver Switching 30 A in the Sub-Nanosecond Range
/en/research/publications/gan-laser-driver-switching-30-a-in-the-sub-nanosecond-range
A GaN-HEMT-based laser driver circuit is presented which can switch 30 A of current with a minimum pulse width of 580 ps. The pulse width can be varied electronically. Its maximum depends…
A Hybrid 50-W GaN-HEMT Ku-Band Power Amplifier
/en/research/publications/a-hybrid-50-w-gan-hemt-ku-band-power-amplifier
In this paper the design, implementation, and experimental results of a Ku-band 50 W GaN-HEMT power amplifier (PA) for satellite communication are presented. A 250 nm bare-die device has…
Synthesis and Design of Suspended Substrate Stripline Filters for Digital Microwave Power Amplifiers
/en/research/publications/synthesis-and-design-of-suspended-substrate-stripline-filters-for-digital-microwave-power-amplifiers
In this paper, a synthesis method for suspended substrate stripline filters for digital microwave power amplifier applications is presented. The synthesis method combines a lumped element and…
A New Modulator for Digital RF Power Amplifiers Utilizing a Wave-Table Approach
/en/research/publications/a-new-modulator-for-digital-rf-power-amplifiers-utilizing-a-wave-table-approach
This work presents for the first time a wave-table based coding scheme to generate a high speed binary input signal for digital RF power amplifiers. The approach maximizes the utilization of the time…
Discrete Gate Bias Modulation of a Class-G Modulated RF Power Amplifier
/en/research/publications/discrete-gate-bias-modulation-of-a-class-g-modulated-rf-power-amplifier
In this paper the combination of class-G supply modulation with discrete level gate bias modulation is investigated. Previous work with class-G supply modulation revealed that the supply voltage…
An 60 W Average Power Wideband Amplifier with Envelope Tracking for DVB-T Applications
/en/research/publications/an-60-w-average-power-wideband-amplifier-with-envelope-tracking-for-dvb-t-applications
In this paper, the development of a DVB-T power amplifier (PA) with enhanced efficiency performance based on the envelope tracking method (ET) is described. The amplifier works in the ultrahigh…