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Extended lifetime for DBR tapered diode lasers due to a novel internal output DBR-grating
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To treat eye diseases, laser coagulation with laser emission at 532 nm is widely used. For this purpose, FBH is developing high reliable, high spectral radiance laser sources emitting at 1064 nm for…
Fighting hospital germs with UVC light-emitting diodes
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A novel LED irradiation system developed by the Ferdinand-Braun-Institut aims to kill microorganisms with ultra-short wave UV light – without side effects. Prototype handed over to the Charité for…
Raman spectroscopic investigations on soil using a 785 nm dual-wavelength diode laser
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Precision agriculture is becoming increasingly important. The FBH evaluates the potential of Raman spectroscopy. The non-destructive optical method can be used to characterize soil, thus paving the…
Ferdinand-Braun-Institut showcases latest developments at Laser Optics Berlin
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Ferdinand-Braun-Institut showcases latest developments at Laser Optics Berlin Due to their reliability, small size, high output power and high efficiency, semiconductor lasers are increasingly…
Prof. Dr.-Ing. Wolfgang Heinrich becomes new President of the European Microwave Association
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Der langjährige Abteilungsleiter Mikrowellentechnik des Ferdinand-Braun-Instituts und Professor an der Technischen Universität Berlin, Wolfgang Heinrich, übernahm zum Jahreswechsel 2010 die…
Leistungsstarke DFB-Breitstreifenlaser erzielen erstmalig mehr als 60% Konversionseffizienz
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Leistungsstarke DFB-Breitstreifenlaser erzielen erstmalig mehr als 60% Konversionseffizienz Leistungsstarke Breitstreifenlaser mit internen, epitaktisch überwachsenen distributed feedback (DFB)…
Best Paper Award: ESREF 2012
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Best Paper Award: ESREF 2012 The publication from A. Zanandrea, E. Bahat-Treidel, F. Rampazzo, A. Stocco, M. Meneghini, E. Zanoni, O. Hilt, P. Ivo,…
Balanced 20 W GaN X-band power amplifier
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Power amplifiers (PA) are key components of any communication, radar or satellite system. At the FBH, GaN power amplifier MMICs are realized providing both a high output power and a high efficiency.…
Quantification of matrix and impurity elements in AlxGa1-xN compounds by Secondary Ion Mass Spectrometry
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The AlGaN material system is of increasing interest for UV-based optoelectronic devices such as light emitting diodes (LEDs), laser diodes and photodetectors. The electronic properties of AlxGa1-xN…
MOVPE growth of polar (0001) and non-polar (11-20) GaN on cone-shaped patterned sapphire substrates
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The patterned sapphire substrates (PSS) technology based on lateral overgrowth has been proven effective in reducing threading dislocation density and releasing in-plane residual strain of GaN.…