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Search results 861 until 870 of 1745

Quantification of matrix and impurity elements in AlxGa1-xN compounds by Secondary Ion Mass Spectrometry

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The AlGaN material system is of increasing interest for UV-based optoelectronic devices such as light emitting diodes (LEDs), laser diodes and photodetectors. The electronic properties of AlxGa1-xN…

MOVPE growth of polar (0001) and non-polar (11-20) GaN on cone-shaped patterned sapphire substrates

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The patterned sapphire substrates (PSS) technology based on lateral overgrowth has been proven effective in reducing threading dislocation density and releasing in-plane residual strain of GaN.…

New class of high-performance THz MMICs – process established at FBH

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Recently, FBH in cooperation with IHP has established an InP-based process with operating frequencies up to the 250 GHz range which can be realized on top of a fully processed BiCMOS wafer.…

Reduced dislocation density – patterning of sapphire to fabricate templates for GaN/AlGaN epitaxy

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Epitaxial growth of GaN/AlGaN layers for light emitters in the ultraviolet spectral range has increasingly attracted interest in recent years. To improve the internal quantum efficiency of such LEDs,…

Filamentation and beam inhomogeneities in GaN broad area laser diodes

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The phenomenon known as filamentation has been investigated at FBH for blue laser diodes. The results allow for a better understanding of the interplay of epitaxial layer homogeneity, basic laser…

Prize of the European Microwave Association 2019 awarded to Wolfgang Heinrich

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Making microwave research visible and connecting the players in research and industry - this has been Wolfgang Heinrich's driving force for many years. For his outstanding engagement, the head of the…

Optimized buried Bragg gratings for high-power DFB-BA lasers

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High-power, highly efficient broad area diode lasers that are wavelength-stabilized by integrated Bragg gratings are in high demand for example for pumping narrow absorption bands in solid-state…

CLEO 2015 - Laser Science to Photonic Applications

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 Meet FBH scientists at the Conference on lasers and electro-optics.

International Workshop on Bulk Nitride Semiconductor (IWBNS)

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Workshop on challenges of growing high quality Group III nitride crystals with low concentration of structural defects and controlled conductivity

Wocsdice 2013

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The 37. workshop dealing with semiconductor devices and integrated curcuits will be organized by FBH