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Efficient Current Injection Into Single Quantum Dots Through Oxide-Confined p-n-Diodes
/en/research/publications/efficient-current-injection-into-single-quantum-dots-through-oxide-confined-p-n-diodes
Current injection into single quantum dots embedded in vertical p-n-diodes featuring oxide apertures is analyzed in the low-injection regime suitable for single-photon emitters. The experimental and…
Optimization of the Design of Terahertz Detectors Based on Si CMOS and AlGaN/GaN Field-Effect Transistors
/en/research/publications/optimization-of-the-design-of-terahertz-detectors-based-on-si-cmos-and-algangan-field-effect-transistors
TeraFETs are THz power detectors based on field-effect transistors (FETs) integrated with antennas. The first part of this paper discusses the design of Si CMOS TeraFETs leading to an optimized…
The impact of low Al-content waveguides on power and efficiency of 9xx nm diode lasers between 200 and 300K
/en/research/publications/the-impact-of-low-al-content-waveguides-on-power-and-efficiency-of-9xx-nm-diode-lasers-between-200-and-300k
We present results on investigations of 9xx nm, GaAs-based diode lasers with 100 µm wide, 4 mm long stripes operating at temperatures between 200 and 300 K. As temperatures are reduced…
Defect distribution and compositional inhomogeneities in Al0.5Ga0.5N layers grown on stepped surfaces
/en/research/publications/defect-distribution-and-compositional-inhomogeneities-in-al05ga05n-layers-grown-on-stepped-surfaces
This study reports on defect distribution and compositional homogeneity of AlxGa1-xN layers with a nominal composition x of 0.5 grown on AlN by metal organic vapor phase epitaxy. The AlN layers with…
CBr4-based in-situ etching of GaAs, assisted with TMAI and TMGa
/en/research/publications/cbr4-based-in-situ-etching-of-gaas-assisted-with-tmai-and-tmga
In-situ etching of GaAs with CBr4 in metalorganic vapor phase epitaxy has been investigated at different temperatures using in-situ reflectivity to measure the etch rates. Deep (150 nm) etching…
Efficient carrier-injection and electron-confinement in UV-B light-emitting diodes
/en/research/publications/efficient-carrier-injection-and-electron-confinement-in-uv-b-light-emitting-diodes
The effects of the aluminum content x and the magnesium doping concentration in the AlxGa1-xN:Mg electron blocking layer on the emission characteristics of ultraviolet lightemitting diodes has been…
On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells
/en/research/publications/on-optical-polarization-and-charge-carrier-statistics-of-nonpolar-ingan-quantum-wells
Optical polarization is a fundamental property of light emission from m-plane InGaN quantum wells. It is a result of band structure, anisotropic strain, the degree of polarization depending on…
A G-Band High Power Frequency Doubler in Transferred-Substrate InP HBT Technology
/en/research/publications/a-g-band-high-power-frequency-doubler-in-transferred-substrate-inp-hbt-technology
This letter presents a G-band balanced frequency doubler with high output power, realized using a 800 nm transferred-substrate InP-HBT process. The doubler delivers…
SciFab - a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications
/en/research/publications/scifab-a-wafer-level-heterointegrated-inp-dhbtsige-bicmos-foundry-process-for-mm-wave-applications
We present a wafer-level heterointegrated indium phosphide double heterobipolar transistor on silicon germanium bipolar-complementary metal oxide semiconductor (InP DHBT on SiGe BiCMOS) process which…
Injection Current Dependent Single-Mode Fiber Coupling of a DBR Tapered Diode Laser Beam
/en/research/publications/injection-current-dependent-single-mode-fiber-coupling-of-a-dbr-tapered-diode-laser-beam
In this work, we investigate experimentally the influence of injection current induced beam astigmatism change in a distributed Bragg reflector (DBR) tapered diode laser on launching of its nearly…