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FBH at Photonics West 2019

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FBH presents its research results at the world's leading technology event for optics and photonics and is also represented at at the German Pavilion together with its spin-off UVphotonics.

FBH at Photonics West 2018

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You will find us at the Photonics West 2018 exhibition in San Francisco (USA) at the German Pavilion, booth 4529. The FBH is also well represented at the accompanying conferences (Bios, Lase,…

Improvement of diode lasers by better understanding the influence of external feedback

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External feedback can disturb the emission properties of high-power diode lasers. The FBH has developed a measurement setup to study and quantify these effects. As a result, a new generation of…

Integrierte Quellen für kapazitiv gekoppelte Mikrowellenplasmen bei Atmosphärendruck

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Integrierte Quellen für kapazitiv gekoppelte Mikrowellenplasmen bei Atmosphärendruck Denis WolfFerdinand-Braun-Institut, Berlin

Smaller, faster, more energy-efficient – high-performance devices for the digital transformation

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Highly efficient power semiconductors are to pave the way for a wide range of novel applications – from e-mobility to artificial intelligence. This is the objective of the recently launched joint…

New Space Berlin - Network event at FBH

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On December 2, 2019, a network meeting of industry and science on the topic of New Space will take place at the FBH in Berlin. The event is organized by Berlin Partner.

High energy ion beams as a powerful tool for the analysis of the elemental composition of thin layers

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High energy ion beams as a powerful tool for the analysis of the elemental composition of thin layers Dr. Frans MunnikHelmholtz-Zentrum Dresden-Rossendorf e.V.

Ein Lasersystem für Experimente mit Quantengasen unter Schwerelosigkeit

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Ein Lasersystem für Experimente mit Quantengasen unter Schwerelosigkeit Max SchiemangkFerdinand-Braun-Institut,  Berlin

High-power lasers with buried implantation for current confinement

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The FBH has fabricated broad area lasers using a 2-step epitaxial growth process with an intermediate implantation of ions outside of the active laser stripe. The second growth step removes the…

Semiconductor material beta-gallium oxide offers the best prerequisites for next-generation power electronics

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The recently launched joint project "ForMikro-GoNext" studies beta-gallium oxide (β-Ga2O3) utilizing a new vertical device architecture.