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Strong amplitude-phase coupling in submonolayer quantum dots
/en/research/publications/strong-amplitude-phase-coupling-in-submonolayer-quantum-dots
Submonolayer quantum dots promise to combine the beneficial features of zero- and two-dimensional carrier confinement. To explore their potential with respect to all-optical signal processing, we…
Space-borne frequency comb metrology
/en/research/publications/space-borne-frequency-comb-metrology
Precision time references in space are of major importance to satellite-based fundamental science, global satellite navigation, earth observation, and satellite formation flying. Here we report on…
Investigation of the Dynamic On-State Resistance of 600 V Normally-Off and Normally-On GaN HEMTs
/en/research/publications/investigation-of-the-dynamic-on-state-resistance-of-600-v-normally-off-and-normally-on-gan-hemts
In this paper, current collapse phenomena and thermal effects in normally-off and normally-on GaN HEMTs are investigated. The experimental results show that a high-off-state voltage and high-switched…
Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride
/en/research/publications/fe-doping-in-hydride-vapor-phase-epitaxy-for-semi-insulating-gallium-nitride
Fe-doping of GaN layers of 3 in. in diameter and a thickness of 1 mm in a vertical AIX-HVPE reactor is studied. Ferrocen was used as Fe source. It is shown that a sufficient uniformity of…
Astigmatism-free high-brightness 1060 nm edge-emitting lasers with narrow circular beam profile
/en/research/publications/astigmatism-free-high-brightness-1060-nm-edge-emitting-lasers-with-narrow-circular-beam-profile
1060 nm high-brightness vertical broad-area edge-emitting lasers providing anastigmatic high optical power into a narrow circular beam profile are demonstrated. Ridge-waveguide (RW) lasers yield…
Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs
/en/research/publications/temperature-dependent-dynamic-on-state-resistance-in-gan-on-si-based-normally-off-hfets
Enhancement-mode GaN-on-Si HFETs for power switching application are investigated under fast switching and elevated ambient temperatures conditions. The switching characteristics are used to evaluate…
Role of substrate quality on the performance of semipolar (1122) InGaN light-emitting diodes
/en/research/publications/role-of-substrate-quality-on-the-performance-of-semipolar-1122-ingan-light-emitting-diodes
We compare the optical properties and device performance of unpackaged InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) emitting at ∼430 nm grown simultaneously on a high-cost…
Exciton localization in semipolar (1122) InGaN multiple quantum wells
/en/research/publications/exciton-localization-in-semipolar-1122-ingan-multiple-quantum-wells
The exciton localization in semipolar (1122) InxGa1-xN (0.13≤x≤0.35) multiple-quantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. A…
An influence of the local strain on cathodoluminescence of GaN/AlxGa1-xN nanowire structures
/en/research/publications/an-influence-of-the-local-strain-on-cathodoluminescence-of-ganalxga1-xn-nanowire-structures
Near-band-edge excitonic emission shift is investigated as a measure of the local strain in GaN nanowires with single AlxGa1-xN sections of various Al contents (x=0.0, 0.22, 0.49, 1.0). Complementary…
Structural and optical properties of (1122) InGaN quantum wells compared to (0001) and (1120)
/en/research/publications/structural-and-optical-properties-of-1122-ingan-quantum-wells-compared-to-0001-and-1120
We benchmarked growth, microstructure and photo luminescence (PL) of (1122) InGaN quantum wells (QWs) against (0001) and (1120). In incorporation, growth rate and the critical thickness of (1122) QWs…