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Search results 1551 until 1560 of 1768

Red-emitting master-oscillator power-amplifier for holographic applications

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Holography requires lasers with a coherent beam at wavelengths visible to the human eye. Until now, small-sized semiconductor lasers lacked the required linewidths and output power. However, the FBH…

European Microwave Week 2015

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FBH contributions to the European Microwave Week.

Patterning of 100 mm sapphire substrates for fabrication of semi-polar (11-22) GaN templates

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The FBH has recently developed a novel method - combining photolithographic and plasma etching processes - to fabricate defect-reduced GaN on 100 mm diameter r-plane patterned sapphire with…

European Solid-State Device Conference

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FBH presents a tutorial at the ESSDERC 2015 conference

micro photonics - preview event

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2016 the micro photonics is launched. Save the date for the preview event in November.

Towards Ka-band: 20 GHz large-signal performance of 150 nm gate GaN HEMTs

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Ka-band GaN MMICs are gaining considerable interest for high data rate satellite links. In frame of the European FP7 project GaNSAT FBH develops K- and Ka-band MMICs for powering beam steering…

Workshop on Organometallic Vapor Phase Epitaxy

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FBH presents recent research at the OMVPE

International Conference on Nitride Semiconductors

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FBH presents several lectures and 2 poster at the ICNS.

International Conference on Laser Ablation

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FBH presents at the conference recent research results

Highly robust GaN-HEMT based low-noise amplifiers

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BTU Cottbus-Senftenberg and FBH have proposed a new concept to protect low-noise amplifiers for input overdrive signals