Epitaxie von III-V Halbleitern
The FBH presents recent research results at the conference:
- Advanced in-situ control for GaN-based electronic devices
- Growth and characterization of semi-polar {11-22} GaN on 100mm diameter r-plane patterned sapphire substrates
- HVPE AIGaN Templates
- AIGaN layers grown with HVPE
- Hydride Vapor Phase-Epitaxy of iron-doped GaN layers with diameters up to 100 mm
- Exploring the limits of AIxGa1-xN with high alumininum mole fractions x > 80 %
As part of the conference the FBH is involved in a public presentation of the BMBF project "TeleGaN"