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Continuous-wave operation of 405 nm distributed Bragg reflector laser diodes based on GaN using 10th-order surface gratings
/en/research/publications/continuous-wave-operation-of-405-nm-distributed-bragg-reflector-laser-diodes-based-on-gan-using-10th-order-surface-gratings
Single longitudinal mode continuous-wave operation of GaN-based distributed Bragg reflector (DBR) laser diodes with 10th-order surface gratings is demonstrated. The DBR consists of periodic V-shaped…
60% Efficient Monolithically Wavelength-Stabilized 970-nm DBR Broad-Area Lasers
/en/research/publications/60-efficient-monolithically-wavelength-stabilized-970-nm-dbr-broad-area-lasers
Progress in epitaxial design is shown to enable increased optical output power Popt and power conversion efficiency ηE and decreased lateral far-field divergence angle in GaAs-based distributed…
Optimizing Vertical and Lateral Waveguides of kW-Class Laser Bars for Higher Peak Power, Efficiency and Lateral Beam Quality
/en/research/publications/optimizing-vertical-and-lateral-waveguides-of-kw-class-laser-bars-for-higher-peak-power-efficiency-and-lateral-beam-quality
GaAs-based, highly-efficient, kW-class, 1-cm laser bars with high peak power Popt and improved beam quality in quasi-continuous-wave mode are presented. The use of an extreme-triple-asymmetric (ETAS)…
Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin
/en/research/publications/enhanced-light-extraction-efficiency-of-uv-leds-by-encapsulation-with-uv-transparent-silicone-resin
Increase of light extraction efficiency (LEE) and total output power of UV light emitting diodes (LEDs) emitting at 265 and 310 nm, respectively, after encapsulation with a UV-transparent silicone…
Stability of ZnSe-Passivated Laser Facets Cleaved in Air and in Ultra-High Vacuum
/en/research/publications/stability-of-znse-passivated-laser-facets-cleaved-in-air-and-in-ultra-high-vacuum-1
Catastrophic optical mirror damage (COMD) is one of the main failure mechanisms limiting the reliability of GaAs based laser diodes. Here, we compare the facet stability of ZnSe-passivated…
A 300 GHz Frequency Doubler in Transferred Substrate InP DHBT Technology
/en/research/publications/a-300-ghz-frequency-doubler-in-transferred-substrate-inp-dhbt-technology
A 300 GHz frequency doubler in transferred-substrate InP DHBT technology is presented. The frequency doubler has an unbalanced single ended topology and employs reflector networks for high…
A D-Band Power Amplifier with 12dBm P1dB, 10% Power Added Efficiency in InP-DHBT Technology
/en/research/publications/a-d-band-power-amplifier-with-12dbm-p1db-10-power-added-efficiency-in-inp-dhbt-technology
This paper presents a D-band power amplifier (PA) using 800 nm InP-DHBT technology. It consists of a driver stage with a 2-way combined cascade unit power cell. Measurements show 12 dB…
A 100 GHz Class-F-Like InP-DHBT PA with 25.4% PAE
/en/research/publications/a-100-ghz-class-f-like-inp-dhbt-pa-with-254-pae
This paper presents for the first time a class-F-like W-band power amplifier in InP DHBT technology. It reaches a power added efficiency (PAE) of 25.4% at 8.8 dBm output power (Pout) at…
Noise Modeling of GaN/AlN HEMT
/en/research/publications/noise-modeling-of-ganaln-hemt
AlN outperforming GaN as a buffer layer material makes GaN/AlN HEMTs promising for future high power and low noise applications. However, information on the noise performance and the noise modeling…
A 4 GBaud 5 Vpp Pre-Driver for GaN based Digital PAs in 22 nm FDSOI using LDMOS
/en/research/publications/a-4-gbaud-5-vpp-pre-driver-for-gan-based-digital-pas-in-22-nm-fdsoi-using-ldmos
This paper presents a 4 GBaud pre-driver chip for GaN-based RF digital transmitter chains providing voltage swings up to 5Vpp at typical capacitive load impedances (0.25 pF). The compact…