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A 0.5 THz Signal Source with -11 dBm Peak Output Power Based on InP DHBT
/en/research/publications/a-05-thz-signal-source-with-11-dbm-peak-output-power-based-on-inp-dhbt
This paper presents a 0.5 THz oscillator, realized using a transferred-substrate (TS) 0.3 µm InP DHBT process. It delivers -11 dBm peak output power. The DC consumption is only…
Limiting the Output Power of Rugged GaN LNAs
/en/research/publications/limiting-the-output-power-of-rugged-gan-lnas
Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient…
Packaged Floating-Ground RF Power GaN-HEMT
/en/research/publications/packaged-floating-ground-rf-power-gan-hemt
This paper presents a novel packaged RF power GaN-HEMT for floating-ground operation. A bondable singlelayer capacitor is mounted in the package close to the transistor chip to provide the low…
GaN Digital Outphasing PA
/en/research/publications/gan-digital-outphasing-pa
This paper presents a novel GaN-based digital outphasing power amplifier for 800 MHz. The PA reaches a maximum output power of 5.8 W at 30 V final-stage drain supply voltage. A novel…
Integrated atomic quantum technologies in demanding environments: development and qualification of miniaturized optical setups and integration technologies for UHV and space operation
/en/research/publications/integrated-atomic-quantum-technologies-in-demanding-environments-development-and-qualification-of-miniaturized-optical-setups-and-integration-technologies-for-uhv-and-space-operation
Employing quantum sensors in field or in space implies demanding requirements on the used components and integration technologies. Within our work on compact atomic sensors, we develop miniaturized,…
Impact of Substrate Termination on Dynamic On-State Characteristics of a Normally-off Monolithically Integrated Bidirectional GaN HEMT
/en/research/publications/impact-of-substrate-termination-on-dynamic-on-state-characteristics-of-a-normally-off-monolithically-integrated-bidirectional-gan-hemt
The dynamic on-state resistance of monolithically integrated bidirectional GaN HEMTs assuming hardswitching in half-bridge topology is studied for different approaches of substrate termination.…
Lateral and vertical power transistors in GaN and Ga2O3
/en/research/publications/lateral-and-vertical-power-transistors-in-gan-and-ga2o3
Vertical silicon carbide transistors ant lateral gallium nitride (GaN) transisitors for power-electronic applications currently target applications with different voltage and power ratings.…
High Duty Cycle, High Repetition Rate High Brightness Diode Laser Pulsed-Pump-Sources
/en/research/publications/high-duty-cycle-high-repetition-rate-high-brightness-diode-laser-pulsed-pump-sources
A diode laser pump source is presented using passive side-cooling to enable >10% duty cycle (optimal cooling, long time constants). 6 kW output (1.4 MW/cm2/sr ex-fiber) is…
Electroplated Gold Microstuds for Thermocompression Bonding of UV LED Chips
/en/research/publications/electroplated-gold-microstuds-for-thermocompression-bonding-of-uv-led-chips
A bonding technology using electroplated Au microstuds for ultraviolet (UV) light-emitting diodes (LEDs) has been investigated. Au studs with diameter, height, and pitch of about 15, 8, and…
HOM damping options for the Z-Pole operatingscenario of FCC-ee
/en/research/publications/hom-damping-options-for-the-z-pole-operatingscenario-of-fcc-ee
The Z-pole option of FCC-ee is an Ampere class machine with a beam current of 1.39 A. Due to high HOM power and strong HOM damping requirements, the present baseline of FCC-ee considers a…