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New deposition tool for excellent silicon nitride layers
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With Sentech Instruments' SI500D the FBH has a new capable tool for plasma deposition of silicon nitride at hand that significantly expands the institute’s possibilities in this field.
AlGaN/GaN microwave power transistors: Focussed optimization of linearity and efficiency
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The linearity of AlGaN/GaN heterojunction field-effect transistors (HFETs) is one of the key parameters in modern telecom systems. The FBH works on optimizing this feature to design GaN-based RF…
Cost-Effective Packaging for 77 GHz Automotive Radar
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Radar systems in the 77 GHz range have become an essential part of the comfort and safety features in high-end cars. One of the dominant cost factors for such systems is packaging. LTCC…
High quality GaN boules
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Efficient blue-violet laser diodes with high reliability and long device lifetimes require GaN substrates with high material quality at affordable prices. As an alternative approach to growth on…
Semiconductor Disk Lasers: a scalable short wavelength laser
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Disk lasers as optically pumped surface emitters combine the high beam quality of a vertically emitting laser with a high output power. FBH succeeded in fabricating InGaN disk lasers with a peak…
1 W master oscillator power amplifier laser modules with narrow linewidth for applications in space
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The FBH succeeded to realize a compact and rugged micro-integrated master oscillator power amplifier (MOPA) that features a narrow linewidth with high-power output. It is thus suitable for a…
Mit Sandwich-Chips zu hoher Leistung und Frequenz
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Even in special fields such as semiconductor technology seperate worlds exist: scientists often work independently on silicon-based CMOS circuits and III-V semiconductors, reports Prof. Wolfgang…
Wavelength-stabilized lasers with surface Bragg grating
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FBH uses frequency-selective Bragg gratings for its diode lasers in order to achieve a low temperature dependence and a very narrow line width of the emitted laser light. With its newly…
Gelungener Technologietransfer: UV-Photodioden schließen Lücke in internationalen Märkten
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UV photo diodes based on silicon carbide (SiC) are core components in a variety of applications ranging from process monitoring to biomedical analysis. Due to the close cooperation between research…
Normally-off high-voltage GaN transistors with carbon-doped buffer
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The normally-off p-GaN gate technology developed at FBH combines low leakage currents for the unbiased gate (0 V) in the off-state with high currents and low resistances in the on-state. For…