Search
Are you looking for a scientific paper? Please use the special search function. The standard search does not return results from publications.
Growth process modification to improve the quality of Al0.45Ga0.55N
/en/research/research-news/growth-process-modification-to-improve-the-quality-of-al045ga055n
The improvement of HVPE grown Al0.45Ga0.55N crystal quality is a current research topic at FBH. For that purpose, the sapphire substrate is patterned with parallel trenches which then are…
FBH again received TOTAL E-QUALITY award
/en/research/research-news/fbh-again-received-total-e-quality-award-1
On September 24, 2012, the Ferdinand-Braun-Institut again received the TOTAL E-QUALITY award for its dedicated involvement in equal opportunities.
Optimizing Multifinger Transistors for MM-Wave Power Amplification
/en/research/research-news/optimizing-multifinger-transistors-for-mm-wave-power-amplification
At FBH, work has been performed aiming at higher output power levels of mm-wave power amplifiers. To achieve this, multifinger transistors in FBH's Transferred-Substrate InP HBT technology were…
Diffuse optical imaging and spectroscopy of biological tissues by picosecond near infrared light pulses
/en/research/research-news/diffuse-optical-imaging-and-spectroscopy-of-biological-tissues-by-picosecond-near-infrared-light-pulses
Alessandro Torricelli Politecnico di Milano – Dipartimento di Fisica
Narrow bandwidth red emitting diode lasers
/en/research/research-news/narrow-bandwidth-red-emitting-diode-lasers
Narrow bandwidth red-emitting diode lasers will be an alternative for commonly used He-Ne-Lasers in metrology and Raman spectroscopy in the future. Just recently, scientists from the FBH succeeded…
3-dimensional integration of SiGe-BiCMOS and InP-HBT technology
/en/research/research-news/3-dimensional-integration-of-sige-bicmos-and-inp-hbt-technology
Current results from the InP-HBT high frequency circuits fabricated within the "HiTeK" project prove the capability of the developed technology platform for heterogeneous integrated…
Fast and efficient switching with GaN-based power-transistors
/en/research/research-news/fast-and-efficient-switching-with-gan-based-power-transistors
The FBH develops normally-off GaN transistors based on a p-GaN gate technology. Switching transistors with 150 mm gate width have been realized showing an on-state resistance RON =…
New spin-off at FBH: Thin film coating at atmospheric pressure
/en/research/research-news/new-spin-off-at-fbh-thin-film-coating-at-atmospheric-pressure
Many of our every day products, such as mobile phones, eye glasses, and flat-panel displays contain thin films deposited by cathode evaporation. Up to now, this requires bulky and costly vacuum…
Cream of the Crop: Sandwich Chips Combining the Best of Two Technologies
/en/media-center/press-releases/cream-of-the-crop-sandwich-chips-combining-the-best-of-two-technologies
The two Leibniz institutes FBH and IHP broke new technological ground and successfully combined their – up to now separate – technology worlds. Due to their high performance the novel chips developed…
High Brilliance Diode Lasers for Industrial Applications: BRIDLE
/en/media-center/press-releases/high-brilliance-diode-lasers-for-industrial-applications-bridle
A consortium of companies and research institutes from five European countries has joined forces in a common EC funded research project to achieve dramatic improvements in the brilliance of…