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Efficient Tm:YAG and Tm:LuAG lasers pumped by red tapered diodes
/en/research/publications/efficient-tmyag-and-tmluag-lasers-pumped-by-red-tapered-diodes
Eye-safe, diode-pumped all-solid-state lasers working in the 2 µm region are favourable for many applications including remote sensing, medicine, and gas sensing. Tm-doped crystals such as…
Towards a Strontium Beam Optical Reference Based on the 1S0 → 3P1 Intercombination Line on a Sounding Rocket
/en/research/publications/towards-a-strontium-beam-optical-reference-based-on-the-1s0nbsprarrnbsp3p1-intercombination-line-on-a-sounding-rocket
Within the OPUS collaboration, we develop optical frequency references based on spectroscopy of the 1S0 → 3P1 intercombination line of 88Sr at 689 nm in thermal and laser-cooled…
Simulation and design of a compact GaAs based tunable dual-wavelength diode laser system
/en/research/publications/simulation-and-design-of-a-compact-gaas-based-tunable-dual-wavelength-diode-laser-system
We present our design of a compact, integrated and tunable dual-wavelength diode laser system emitting around 785 nm, which is of interest for several applications like Raman spectroscopy and…
TeraFET multi-pixel THz array for a confocal imaging system
/en/research/publications/terafet-multi-pixel-thz-array-for-a-confocal-imaging-system
We present a THz detector based on AlGaN/GaN HEMT technology implemented for a multi-pixel array and tested in a confocal THz imaging system. The multi-pixel array shows good homogeneity where the…
Sub-THz components for high capacity point to multipoint wireless networks
/en/research/publications/sub-thz-components-for-high-capacity-point-to-multipoint-wireless-networks
The first point to multipoint wireless system at D-band (141 - 148.5 GHz), providing high capacity area sectors fed by high data rate G-band (275 - 305 GHz) links connected to fiber access…
A 240 GHz Active Multiplier-Based Signal Source for Millimeter-Wave/Terahertz Applications
/en/research/publications/a-240-ghz-active-multiplier-based-signal-source-for-millimeter-waveterahertz-applications
This paper presents a 240 GHz signal source using a 0.8 µm transferred substrate (TS) InP-HBT technology. The source is based on an active tripler and delivers -3 dBm peak output…
The scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films
/en/research/publications/the-scanning-electron-microscope-as-a-flexible-tool-for-investigating-the-properties-of-uv-emitting-nitride-semiconductor-thin-films
In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and…
Efficient active multiplier-based signal source for >300 GHz system applications
/en/research/publications/efficient-active-multiplier-based-signal-source-for-gt300-ghz-system-applications
This Letter presents a 300 GHz signal source, realised using an 800 nm transferred-substrate InP double heterojunction bipolar transistor process. The source is based on an active frequency…
A 300 GHz Active Frequency Tripler in Transferred-Substrate InP DHBT Technology
/en/research/publications/a-300-ghz-active-frequency-tripler-in-transferred-substrate-inp-dhbt-technology
This paper presents a monolithic integrated active frequency tripler implemented in an InP double heterojunction bipolar transistor (DHBT) transferred-substrate (TS) technology. The active tripler is…
A GaN-HEMT with Floating LF Ground for Reverse Operation in Integrated RF Power Circuits
/en/research/publications/a-gan-hemt-with-floating-lf-ground-for-reverse-operation-in-integrated-rf-power-circuits
An integrated GaN-HEMT with floating low-frequency (LF) ground is presented. The floating LF ground enables reverse operation in RF applications making operation at offset DC and LF voltages…