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NiCr resistors for terahertz applications in an InP DHBT process
/en/research/publications/nicr-resistors-for-terahertz-applications-in-an-inp-dhbt-process
In this article we report on the development of nickel-chrome (NiCr) thin film resistors (TFRs) for application in an Indium Phosphide (InP) Hetero-Bipolar Transistor process. We developed a stable…
Stabilization of sputtered AlN/sapphire templates during high temperature annealing
/en/research/publications/stabilization-of-sputtered-alnsapphire-templates-during-high-temperature-annealing
In this work we investigated annealing of 350 nm and 450 nm thick sputtered (SP) AlN on sapphire in the temperature range from 1650 °C to 1730 °C. The most distinct…
Vertical GaN n-channel MISFETs on ammonothermal GaN substrate: Temperature dependent dynamic switching characteristics
/en/research/publications/vertical-gan-n-channel-misfets-on-ammonothermal-gan-substrate-temperature-dependent-dynamic-switching-characteristics
Switching of GaN-based vertical-trench gate MISFET on ammonothermal n-type GaN substrate are studied as a function of temperature. Pulsed ON-state IV characterization revealed three unexpected…
AlN and AlN/Al2O3 seed layers from atomic layer deposition for epitaxialgrowth of AlN on sapphire
/en/research/publications/aln-and-alnal2o3-seed-layers-from-atomic-layer-deposition-for-epitaxialgrowth-of-aln-on-sapphire
The annealing of amorphous AlN and AlN/Al2O3 seed layers from atomic layer deposition (ALD) on sapphire substrates and their application as starting layers for metal-organic vapor phase epitaxial…
Coherent combining of high brightness tapered amplifiers for efficient non-linear conversion
/en/research/publications/coherent-combining-of-high-brightness-tapered-amplifiers-for-efficient-non-linear-conversion
We report on a coherent beam combination of three high-brightness tapered amplifiers, which are seeded by a single-frequency laser at λ = 976 nm in a simple architecture with…
Efficient coupling of dynamic electro-optical and heat-transport models for high-power broad-area semiconductor lasers
/en/research/publications/efficient-coupling-of-dynamic-electro-optical-and-heat-transport-models-for-high-power-broad-area-semiconductor-lasers
In this work, we discuss the modeling of edge-emitting high-power broad-area semiconductor lasers. We demonstrate an efficient iterative coupling of a slow heat transport (HT) model defined on…
Influence of quartz on silicon incorporation in HVPE grown AlN
/en/research/publications/influence-of-quartz-on-silicon-incorporation-in-hvpe-grown-aln
Aluminum nitride growth via hydride vapor phase epitaxy has been investigated with respect to impurity uptake. The precursor aluminum chloride was identified to react with quartz glass and provide…
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements
/en/research/publications/a-streamlined-drain-lag-model-for-gan-hemts-based-on-pulsed-s-parameter-measurements
Accurately and efficiently modeling the drain-lag effects is crucial in nonlinear large-signal modeling for Gallium Nitride high electron mobility transistors. In this paper, a simplified yet…
Influence of silicon doping on internal quantum efficiency and threshold of optically pumped deep UV AlGaN quantum well lasers
/en/research/publications/influence-of-silicon-doping-on-internal-quantum-efficiency-and-threshold-of-optically-pumped-deep-uv-algan-quantum-well-lasers
The influence of silicon doping on optically pumped AlGaN quantum well (QW) lasers has been analyzed. Either the QWs, quantum barriers, or the whole heterostructure were doped with Si concentrations…
Improving the spectral performance of extended cavity diode lasers using angled-facet laser diode chips
/en/research/publications/improving-the-spectral-performance-of-extended-cavity-diode-lasers-using-angled-facet-laser-diode-chips
We present and compare theoretical and experimental results on the electro-optical performance of extended cavity diode lasers (ECDLs) that employ two ridge waveguide designs for the…