Semiconductor material beta-gallium oxide offers the best prerequisites for next-generation power electronics
The recently launched joint project "ForMikro-GoNext" of the Leibniz-Institut für Kristallzüchtung (IKZ), the Ferdinand Braun Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), the University of Bremen and industrial partners ABB Power Grids Switzerland Ltd. and AIXTRON studies beta-gallium oxide (β-Ga2O3). The project partners are investigating this semiconductor material utilizing a new vertical device architecture in order to exploit its outstanding properties for transistors more effectively. The joint project is funded by the German Federal Ministry of Education and Research (BMBF) with approximately €2 million over 4 years.
