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Widely tunable monolithically integrated GaAs lasers with sampled gratings
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Widely tunable monolithically integrated GaAs lasers with sampled gratings are attractive light sources for industrial and biomedical sensor applications. Recently we have realized a single…
Degradation of AlGaN-based metal-semiconductor-metal UV photodetectors
/en/research/research-news/degradation-of-algan-based-metal-semiconductor-metal-uv-photodetectors
Degradation of AlGaN-based metal-semiconductor-metal UV photodetectors AlxGa1-xN-based metal-semiconductor-metal photodetectors (MSM PDs) are very attractive for the detection of ultraviolet…
Plasma etching of surface gratings for laser diodes emitting in the blue-violet spectral region
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Plasma etching of surface gratings for laser diodes emitting in the blue-violet spectral region For GaN-based DFB laser diodes, specific etching processes are required to realize laterally coupled…
Compact micro-integrated laser modules for the next generation of optical clocks
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Compact micro-integrated laser modules for the next generation of optical clocks FBH has realized a compact micro-integrated laser module for a transportable, robust, and user-friendly optical clock…
William F. Meggers Award of the SAS presented to FBH authors
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The paper "Shifted Excitation Raman Difference Spectroscopy with Charge-Shifting Charge-Coupled Device (CCD) Lock-In Detection" was honored with the prestigious William F. Meggers Award of the…
frequent on materials technology published
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The current issue of the FBH publication "frequent" has been published. It deals with the first step in the realization of concepts for optoelectronic and electronic semiconductor devices.
Hot off the press: FBH's annual report
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FBH's most important events and results achieved in the years 2019 and 2020.
Berlin quantum technology community introduces itself
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In September a new brochure with portraits of companies and institutions from various fields of quantum technologies in Berlin and Brandenburg has been published. It also offers a detailed analysis…
D-band up-converter with gain peak conversion of 17 dB using extremely scaled InP DHBT epitaxy
/en/research/research-news/d-band-up-converter-with-gain-peak-conversion-of-17-db-using-extremely-scaled-inp-dhbt-epitaxy
FBH has successfully realized a D-band up-converter (between 110 and 170 GHz). The MMIC was manufactured on the in-house InP DHBT transfer-substrate process with feature sizes down to…
Enhancing Modeling Accuracy - Simulating Drain Lag of GaN HEMTs with ASM-HEMT
/en/research/research-news/enhancing-modeling-accuracy-simulating-drain-lag-of-gan-hemts-with-asm-hemt
The FBH developed with BTU Cottbus-Senftenberg a compact model to bridge the gap between experiment and modeling of semiconductor devices. Therefore, the ASM-HEMT physics-based compact model has been…