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Compact mode-locked diode laser system for precision frequency comparisons in microgravity experiments
/en/research/publications/compact-mode-locked-diode-laser-system-for-precision-frequency-comparisons-in-microgravity-experiments
We present a compact mode-locked diode laser designed to generate a frequency comb in the wavelength range of 780 nm. The spectral bandwidth exceeds 15 nm (- 20 dB level) with…
Optical Frequency Combs for Space Applications
/en/research/publications/optical-frequency-combs-for-space-applications
Optical frequency comb-based high resolution laser spectroscopy has been demonstrated in space under micro-gravity on two sounding rocket based experiments. The comb has been used to simultaneously…
Scalable semipolar gallium nitride templates for high-speed LEDs
/en/research/publications/scalable-semipolar-gallium-nitride-templates-for-high-speed-leds
Metal organic vapor phase deposition on etched 4-inch-diameter sapphire wafers is used to create low-defect-density gallium nitride templates.
A compact and robust diode laser system for atom interferometry on a sounding rocket
/en/research/publications/a-compact-and-robust-diode-laser-system-for-atom-interferometry-on-a-sounding-rocket
We present a diode laser system optimized for laser cooling and atom interferometry with ultra-cold rubidium atoms aboard sounding rockets as an important milestone toward space-borne quantum…
Atomic signatures of local environment from core-level spectroscopy in β-Ga2O3
/en/research/publications/atomic-signatures-of-local-environment-from-core-level-spectroscopy-in-b-ga2o3
We present a joint theoretical and experimental study on core-level excitations from the oxygen K edge of β-Ga2O3. A detailed analysis of the electronic structure reveals the importance of O-Ga…
AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs
/en/research/publications/aln-growth-on-nano-patterned-sapphire-a-route-for-cost-efficient-pseudo-substrates-for-deep-uv-leds
C-plane-oriented sapphire substrates that were patterned on the nanoscale were overgrown by AlN using metal-organic vapor phase epitaxy. The occurrence of undesired misaligned AlN growth was…
Temperature and doping dependent changes in surface recombination during UV illumination of (Al)GaN bulk layers
/en/research/publications/temperature-and-doping-dependent-changes-in-surface-recombination-during-uv-illumination-of-algan-bulk-layers
We have studied the effect of continuous illumination with above band gap energy on the emission intensity of polar (Al)GaN bulk layers during the photoluminescence experiments. A temporal change in…
Superconducting ferecrystals: turbostratically disordered atomic-scale layered (PbSe)1.14(NbSe2)n thin films
/en/research/publications/superconducting-ferecrystals-turbostratically-disordered-atomic-scale-layered-pbse114nbse2n-thin-films
Hybrid electronic heterostructure films of semi- and superconducting layers possess very different properties from their bulk counterparts. Here, we demonstrate superconductivity in ferecrystals:…
1180nm DBR-ridge waveguide lasers with strain compensation layers in the active region for lifetime improvement
/en/research/publications/1180nm-dbr-ridge-waveguide-lasers-with-strain-compensation-layers-in-the-active-region-for-lifetime-improvement
DBR ridge waveguide lasers at 1180nm were developed based on strained InGaAs quantum wells. The lasers feature a lifetime of more than 1000h at 100mW and are believed to be a key component for…
Experimental and theoretical studies into the limits to peak power in GaAs-based diode lasers
/en/research/publications/experimental-and-theoretical-studies-into-the-limits-to-peak-power-in-gaas-based-diode-lasers
An overview is presented of progress in studies to diagnose and address limits to peak power in high power diode lasers. Key terms in advanced structures include carrier losses in the p-side…