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Placed first in "Most Downloaded Journal of Crystal Growth Articles"
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A joint publication on in-situ photoluminescence studies during growth of InGaN LED structures in a MOVPE reactor currently ranks on the first place of the most downloaded articles from Journal of…
Compact diode laser modules with single-mode fiber output in the multi-watt power range
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Within the InnoProfile-Transfer joint research project "FaBriDi", the Ferdinand-Braun-Institut (FBH) develops fiber-coupled demonstrators for unrestricted industrial use. Recently, a…
MRS Spring Meeting
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The Ferdinand-Braun-Institut presents a tutorial and a lecture at the upcoming Materials Research Society spring meeting.
New in-situ analysis options for plasma etch processes at FBH
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Dry chemical etching by means of highly reactive plasmas is one of the most important structuring methods in semiconductor industry. Within a cooperation of FBH and the company Laytec the impact of…
Top score - FBH positively evaluated and recommended for further funding
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After the positive evaluation process, the Senate of the Leibniz Association recommended the Ferdinand-Braun-Institut for further joint funding by the federal and state authorities.
Klein aber oho
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Klein aber oho As information is usually given in German language, please switch to the German website. Girls'Day at FBH: 23.04.2015
SPIE Sensing Technology and Applications
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The FBH presents recent research at the conference
Thermal characterization of AlGaN/GaN HEMTs on Si and n-SiC substrates
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Channel temperature characterization of AlGaN/GaN devices is an important feature for reliability estimation and assessment of power switching losses. We present here a method to thermally…
Semiconductor Lasers in STED Nanoscopy
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Dr. Matthias HenrichDeutsches Krebsforschungszentrum (DKFZ), Heidelberg
Laser Display Conference 2015
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FBH presents recent research at the Laser Display Conference.