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Increased Conversion Efficiency at 800 W Continuous Wave Output From Single 1-cm Diode Laser Bars at 940 nm
/en/research/publications/increased-conversion-efficiency-at-800-w-continuous-wave-output-from-single-1-cm-diode-laser-bars-at-940-nm
Diode lasers are key sources of optical energy for industrial machine tools and continuous improvement in their performance is needed to support performance and cost scaling efforts. For example,…
Semiconductor Laser Linewidth Theory Revisited
/en/research/publications/semiconductor-laser-linewidth-theory-revisited
More and more applications require semiconductor lasers distinguished not only by large modulation bandwidths or high output powers, but also by small spectral linewidths. The theoretical…
GaN-channel HEMTs with AlN buffer for high-voltage switching
/en/research/publications/gan-channel-hemts-with-aln-buffer-for-high-voltage-switching
Lateral GaN-based transistors (HEMTs) for power-electronic switching up to 650 V have not yet approached their theoretical material limit in terms of RONA vs. VBr - unlike Si and SiC based…
Novel 1064 nm DBR lasers combining active layer removal and surface gratings
/en/research/publications/novel-1064-nm-dbr-lasers-combining-active-layer-removal-and-surface-gratings
The fabrication and characterisation details of novel distributed Bragg reflector (DBR) diode lasers emitting around 1064 nm are presented here. The AlGaAs epitaxial layer stack used here allows…
A Highly Linear Dual-Stage Amplifier With Beyond 1.75-THz Gain-Bandwidth Product
/en/research/publications/a-highly-linear-dual-stage-amplifier-with-beyond-175-thz-gain-bandwidth-product-1
This work reports a multipurpose highly linear ultrawideband amplifier with a gain-bandwidth product (GBP) of 1.75 THz, the highest reported in any monolithic microwave integrated circuit (MMIC)…
Digital PA Modulator with Phase Shifter for Phased Array Transmitters
/en/research/publications/digital-pa-modulator-with-phase-shifter-for-phased-array-transmitters
This paper presents a modulator for fully digital transmitter chains which allows to realize time delays with ps accuracy between several transmitter branches, as needed for phased array antennas in…
A 26 GHz GaN-MMIC with Integrated Switches for Discrete Level Supply Modulation
/en/research/publications/a-26-ghz-gan-mmic-with-integrated-switches-for-discrete-level-supply-modulation
A GaN-MMIC power amplifier (PA) for 5G applications in the 24 - 28 GHz frequency range with integrated multi-supply switches is presented. It is a three-stage conceptual design developed for the…
Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive
/en/research/publications/characterization-of-the-impairment-and-recovery-of-gan-hemts-in-low-noise-amplifiers-under-input-overdrive
This paper reports an investigation of the dynamic behavior of a GaN-HEMT, which is subjected to high reverse gate voltage pulses. These stress conditions are typical for robust LNAs under RF input…
Modeling Base-Collector Heterojunction Barrier Effect in InP DHBTs for Improved Large Signal Performance
/en/research/publications/modeling-base-collector-heterojunction-barrier-effect-in-inp-dhbts-for-improved-large-signal-performance
In this paper, the large-signal model of InP double heterojunction bipolar transistors (DHBTs) is improved by modeling the soft-knee effect. The soft-knee effect in the DHBTs is explained by the…
High Conversion Gain Up-Converter with +5 dBm OP1dB in InP DHBT Technology for Ultra Capacity Wireless Applications
/en/research/publications/high-conversion-gain-up-converter-with-5-dbm-op1db-in-inp-dhbt-technology-for-ultra-capacity-wireless-applications
A fundamental frequency up-converter for ultra-capacity wireless applications with high conversion gain is presented, realized as double-balanced Gilbert cell mixer using an 800 nm transferred…