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Non-Uniform DFB-Surface-Etched Gratings for Enhanced Performance High Power, High Brightness Broad Area Lasers
/en/research/publications/non-uniform-dfb-surface-etched-gratings-for-enhanced-performance-high-power-high-brightness-broad-area-lasers
Monolithic spectral stabilization is demonstrated in narrow-stripe broad-area lasers (NBA) with high power (5W), conversion efficiency (50%) and high brightness, by using optimized high-order…
3.5 W of diffraction-limited green light at 515 nm from SHG of a single-frequency tapered diode laser
/en/research/publications/35-w-of-diffraction-limited-green-light-at-515-nm-from-shg-of-a-single-frequency-tapered-diode-laser
Multi-Watt efficient compact green laser sources are required for a number of applications e.g. within biophotonics, laser pumping and laser displays. We present generation of 3.5 W of…
Picosecond pulsed micro-module emitting near 560 nm using a frequency doubled gain-switched DBR ridge waveguide semiconductor laser
/en/research/publications/picosecond-pulsed-micro-module-emitting-near-560-nm-using-a-frequency-doubled-gain-switched-dbr-ridge-waveguide-semiconductor-laser
A miniaturized picosecond pulsed semiconductor laser source in the spectral range around 560nm is realized by integrating a frequency doubled distributed Bragg reflector ridge waveguide laser…
633 nm single-mode laser-diode module with PM fiber output
/en/research/publications/633-nm-single-mode-laser-diode-module-with-pm-fiber-output
Several holographic and interferometric applications would benefit significantly from a diode laser based coherent light source near 633 nm. For this purpose a laser diode based on an…
AlGaN-based metal-semiconductor-metal photodetectors with high external quantum effciency at low operating voltage
/en/research/publications/algan-based-metal-semiconductor-metal-photodetectors-with-high-external-quantum-effciency-at-low-operating-voltage
Solar blind Al0.5Ga0.5N/AlN metal-semiconductor-metal photodetectors (MSM PDs) are characterized by means of photocurrent spectroscopy. In order to enhance the external quantum efficiency (EQE) at…
Analysis of waveguide architectures of InGaN/GaN diode lasers by nearfield optical microscopy
/en/research/publications/analysis-of-waveguide-architectures-of-ingangan-diode-lasers-by-nearfield-optical-microscopy
Waveguide (WG) architectures of 420-nm emitting InAlGaN/GaN diode lasers are analyzed by photoluminescence (PL) and photocurrent (PC) spectroscopy using a nearfield scanning optical microscope (NSOM)…
1030-nm diode-laser-based light source delivering pulses with nanojoule energies and picosecond duration adjustable by mode locking or pulse gating operation
/en/research/publications/1030-nm-diode-laser-based-light-source-delivering-pulses-with-nanojoule-energies-and-picosecond-duration-adjustable-by-mode-locking-or-pulse-gating-operation
A new compact 1030 nm picosecond light source which can be switched between pulse gating and mode locking operation is presented. It consists of a multi-section distributed Bragg reflector (DBR)…
785 nm dual-wavelength Y-branch DBR-RW diode laser with electrically adjustable wavelength distance between 0 nm and 2 nm
/en/research/publications/785-nm-dual-wavelength-y-branch-dbr-rw-diode-laser-with-electrically-adjustable-wavelength-distance-between-0-nm-and-2-nm
785 nm dual-wavelength Y-branch DBR-RW diode laser with electrically adjustable wavelength distance between 0 nm and 2 nm B. Sumpf, J. Kabitzke, J. Fricke, P. Ressel,…
Monolithic dual-wavelength diode lasers with sub-MHz narrowband emission at 785 nm
/en/research/publications/monolithic-dual-wavelength-diode-lasers-with-sub-mhz-narrowband-emission-at-785-nm
A dual-wavelength diode laser with sub-MHz narrowband emission at 785 nm is presented. The device is investigated for both emission lines up to an optical power of 150 mW. A stable spectral…
1030 nm DBR tapered diode laser with up to 16 W of optical output power
/en/research/publications/1030-nm-dbr-tapered-diode-laser-with-up-to-16-w-of-optical-output-power
A 1030 nm distributed Bragg reflector (DBR) tapered diode laser with optimized vertical layer structure and lateral design is presented. At a heatsink temperature of 15°C the developed laser provides…