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Let there be light: GoPhoton! is ready for launch
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The Pan European outreach project GoPhoton! aims to promote and raise awareness about the ubiquity and industrial and societal importance of the technologies enabled by Photonics.
Girls'Day at FBH
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Like any other year, FBH opened its doors for the Girls'Day. The girls learned from the institute's trainees and junior researchers about their world of employment.
Photonics Europe
/en/events/photonics-europe-1
FBH presents new research results at Photonics Europe conference.
2.45 GHz Microplasma: More Potential than the Laser?
/en/events/245-ghz-microplasma-more-potential-than-the-laser
Prof. Dr. Ing. Holger HeuermannFH Aachen
Sentinel-1A successfully launched into space - with FBH diode lasers on board
/en/events/sentinel-1a-successfully-launched-into-space-with-fbh-diode-lasers-on-board
On April 3, 2014 shortly after 11 p.m., the earth resources technology satellite Sentinel-1A successfully left for his mission in space - also aboard are space-qualified laser diode benches from…
Two FBH spin-offs exhibiting at Hannover Messe
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Not one, but two spin-offs from Ferdinand-Braun-Institut exhibit current developments at this year's Hannover Messe (April 7-11, 2014) in the "tech transfer – Gateway2Innovation" area…
Mittendrin – Laser für 3D-Fernsehen
/en/media-center/press-releases/mittendrin-laser-fuer-3d-fernsehen
Wer künftig vor dem Fernseher sitzt, dem begegnen die Helden der Filme zum Greifen nah, dreidimensional und mitten im Raum. Ganz ohne lästige Spezialbrille und mit besserer Schärfe und Tiefenwirkung,…
HBTs TS-process with transferred diamond
/en/media-center/press-releases/hbts-ts-process-with-transferred-diamond
Ksenia NosaevaFerdinand-Braun-Institut, Berlin
65 mOhm / 600 V normally-off switching transistors for efficient energy conversion
/en/research/research-news/65-mohm-600-v-normally-off-switching-transistors-for-efficient-energy-conversion
New 600 V devices with low on-state restance have been fabricated at the FBH using a novel layout that was optimized for more efficiently using the semiconductor area. This GaN transistor…