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Reliable 2 W DBR-tapered diode lasers lasing at 1180 nm based on highly strained quantum wells
/en/research/publications/reliable-2-w-dbr-tapered-diode-lasers-lasing-at-1180-nm-based-on-highly-strained-quantum-wells
Distributed Bragg reflector tapered diode lasers at 1180 nm were developed based on strained InGaAs quantum wells. The lasers feature a lifetime of more than 2000 h at 2.0 W and are…
High pulse power wavelength stabilized laser diodes for automotive LiDAR
/en/research/publications/high-pulse-power-wavelength-stabilized-laser-diodes-for-automotive-lidar
The development of diode lasers for automotive LiDAR systems is presented. The lasers feature an internal Bragg grating for low wavelength shift with temperature and small spectral width and emit…
Influence of quantum well barrier height on series resistance in GaAs-based broad area diode lasers
/en/research/publications/influence-of-quantum-well-barrier-height-on-series-resistance-in-gaas-based-broad-area-diode-lasers
High efficiency GaAs-based lasers must have low resistance. However, resistance diverges as temperature reduces, for symmetric and asymmetric vertical structures, at diverse wavelengths, contrary to…
Narrow linewidth semiconductor laser systems for cold atom-based quantum technology applications
/en/research/publications/narrow-linewidth-semiconductor-laser-systems-for-cold-atom-based-quantum-technology-applications
Cold atom-based quantum technologies leap out of physics labs to find application in the field and in space. Lasers that not only meet specific performance requirements but also cope with realistic…
Modeling and simulation of high-power broad-area semiconductor lasers with optical feedback from different external cavities
/en/research/publications/modeling-and-simulation-of-high-power-broad-area-semiconductor-lasers-with-optical-feedback-from-different-external-cavities
We apply a dynamic (1+2)-dimensional traveling wave model and a corresponding parallel optoelectronic solver for simulations of broad-area semiconductor lasers. To avoid a significant slow-down of…
High-power sampled-grating-based master oscillator power amplifier system with 23.5 nm wavelength tuning around 970 nm
/en/research/publications/high-power-sampled-grating-based-master-oscillator-power-amplifier-system-with-235nbspnm-wavelength-tuning-around-970nbspnm
Tunable high-power diode lasers are key components in various established and emerging applications. In this work, we present a compact hybrid master oscillator power amplifier (MOPA) laser system.…
Characterisation and comparison between different S-bend shaped GaAs Y-branch distributed Bragg reflector lasers emitting at 976nm
/en/research/publications/characterisation-and-comparison-between-different-s-bend-shaped-gaas-y-branch-distributed-bragg-reflector-lasers-emitting-at-976nm
Passive S-bend waveguides have been thoroughly studied in the past, however active S-bend structures such as those in Y-branch distributed Bragg reflector (DBR) ridge waveguide (RW) lasers have been…
220-325 GHz high-isolation SPDT switch in InP DHBT technology
/en/research/publications/220-325-ghz-high-isolation-spdt-switch-in-inp-dhbt-technology
A broadband single-pole-double-throw (SPDT) switch is presented covering 220-325 GHz in 800 nm transferred substrate InP DHBT technology. The SPDT switch configuration employs…
Space-borne Bose-Einstein condensation for precision interferometry
/en/research/publications/space-borne-bose-einstein-condensation-for-precision-interferometry
Owing to the low-gravity conditions in space, space-borne laboratories enable experiments with extended free-fall times. Because Bose-Einstein condensates have an extremely low expansion…
Effect of External Mechanical Stress on DC Performance and Reliability of Integrated E/D GaN HEMTs
/en/research/publications/effect-of-external-mechanical-stress-on-dc-performance-and-reliability-of-integrated-ed-gan-hemts
The purpose of this paper is to introduce a novel concept for integrating enhancement mode (E-mode) and depletion mode (D-mode) AlGaN/GaN HEMTs in the same fabrication process. Unlike existing E/D…