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Micro-integrated extended cavity diode laser with integrated optical amplifier for precision spectroscopy in space
/en/research/publications/micro-integrated-extended-cavity-diode-laser-with-integrated-optical-amplifier-for-precision-spectroscopy-in-space
Micro-integrated extended cavity diode laser with integrated optical amplifier for precision spectroscopy in space C. Kürbis1, A. Bawamia1, M. Krüger1, R. Smol1,…
Miniaturized red-emitting hybrid semiconductor MOPA modules with small-sized Faraday isolators
/en/research/publications/miniaturized-red-emitting-hybrid-semiconductor-mopa-modules-with-small-sized-faraday-isolators
Miniaturized red-emitting hybrid semiconductor MOPA modules with small-sized Faraday isolators G. Blume1, J. Pohl1, D. Feise1, P. Ressel1, S. Kreutzmann1, A. Ginolas1,…
Comparison of passive mode-locked laser diodes with colliding and anti-colliding designs containing a DQW with a broad gain spectrum
/en/research/publications/comparison-of-passive-mode-locked-laser-diodes-with-colliding-and-anti-colliding-designs-containing-a-dqw-with-a-broad-gain-spectrum
Comparison of passive mode-locked laser diodes with colliding and anti-colliding designs containing a DQW with a broad gain spectrum T. Prziwarka, A. Klehr, H. Wenzel, J. Fricke,…
Development of a compact mode-locked ECDL for precision frequency comparison experiments at 780 nm
/en/research/publications/development-of-a-compact-mode-locked-ecdl-for-precision-frequency-comparison-experiments-at-780-nm
Development of a compact mode-locked ECDL for precision frequency comparison experiments at 780 nm H. Christopher1, E. Kovalchuk1,2, H. Wenzel1, F. Bugge1, M. Weyers1,…
Self-optimizing passively, actively and hybridly mode-locked diode lasers
/en/research/publications/self-optimizing-passively-actively-and-hybridly-mode-locked-diode-lasers
Self-optimizing passively, actively and hybridly mode-locked diode lasers R.H. Pilny1, B. Döpke1, C. Brenner1, A. Klehr2, A. Knigge2, G. Tränkle2,…
Long-Resonator Laser-Diode Bars for Efficient kW Emission
/en/research/publications/long-resonator-laser-diode-bars-for-efficient-kw-emission
Long-Resonator Laser-Diode Bars for Efficient kW Emission M.M. Karow1, T. Kaul1, S. Knigge1, A. Maaßdorf1, G. Erbert1,2, S.G. Strohmaier2 and P. Crump1 …
Ultralow pulse-to-pulse timing jitter for telecommunication applications by a monolithic passively mode-locked multi quantumwell semiconductor laser emitting at 1080 nm
/en/research/publications/ultralow-pulse-to-pulse-timing-jitter-for-telecommunication-applications-by-a-monolithic-passively-mode-locked-multi-quantumwell-semiconductor-laser-emitting-at-1080-nm
Ultralow pulse-to-pulse timing jitter for telecommunication applications by a monolithic passively mode-locked multi quantumwell semiconductor laser emitting at 1080 nm C. Weber1,…
In-situ photoluminescence measurements during MOVPE of GaN and InGaN in a CCS reactor
/en/research/publications/in-situ-photoluminescence-measurements-during-movpe-of-gan-and-ingan-in-a-ccs-reactor
Gallium Nitride (GaN) and Indium Gallium Nitride (InGaN) have become important semiconductor materials for the LED lighting industry. Recently, a photoluminescence (PL) technique for direct in-situ…
On the EQE-bias characteristics of bottom-illuminated AlGaN-based metal-semiconductor-metal photodetectors with asymmetric electrode geometry
/en/research/publications/on-the-eqe-bias-characteristics-of-bottom-illuminated-algan-based-metal-semiconductor-metal-photodetectors-with-asymmetric-electrode-geometry
The bias dependence of the external quantum efficiency (EQE) of bottom-illuminated Al0.5Ga0.5N/AlN metal-semiconductor-metal photodetectors shows certain features which are directly related to the…
Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)
/en/research/publications/surface-preparation-and-patterning-by-nano-imprint-lithography-for-the-selective-area-growth-of-gaas-nanowires-on-si111
The selective area growth of Ga-assisted GaAs nanowires (NWs) with a high vertical yield on Si(111) substrates is still challenging. Here, we explore different surface preparations and their impact…