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Terahertz wave generation from dual wavelength monolithic integrated Distributed Bragg Reflector semiconductor laser diode
/en/research/publications/terahertz-wave-generation-from-dual-wavelength-monolithic-integrated-distributed-bragg-reflector-semiconductor-laser-diode
THz wave generation from a dual wavelength distributed Bragg reflector (DBR) semiconductor diode laser connected by an Y-shaped waveguide with photoconductive antennas is demonstrated. Two fibre…
A 56 W Power Amplifier with 2-Level Supply and Load Modulation
/en/research/publications/a-56-w-power-amplifier-with-2-level-supply-and-load-modulation
Dynamic load modulation is proposed to improve the efficiency of an RF power amplifier with discrete supply modulation. A 47.5 dBm, 2.7 GHz power amplifier is realized to show the potential…
Challenges in the Design of Wideband GaN-HEMT based Class-G RF-Power Amplifiers
/en/research/publications/challenges-in-the-design-of-wideband-gan-hemt-based-class-g-rf-power-amplifiers
In GaN-based power amplifiers (PA) the gain under continuous wave (CW) excitation compresses slowly over a wide power range. Also, due to memory-effects in the GaNHEMT, the gain for modulated…
Wideband 80 W Balanced Power Amplifier for ISM and LTE-Bands
/en/research/publications/wideband-80-w-balanced-power-amplifier-for-ism-and-lte-bands
An 80 W balanced GaN-HEMT power amplifier for 2.45-2.70 GHz using branch-line couplers is presented in this paper. Its performance is compared to a single-transistor solution. The analysis…
Reliable GaN HEMT Modeling Based on Chalmers Model and Pulsed S-Parameter Measurements
/en/research/publications/reliable-gan-hemt-modeling-based-on-chalmers-model-and-pulsed-s-parameter-measurements
GaN HEMT performance is still compromised by trapping effects, but no commercial circuit simulator already provides compact models that account for these effects. This work explores the capability of…
VSWR Protection of Power Amplifiers Using BST Components
/en/research/publications/vswr-protection-of-power-amplifiers-using-bst-components
A VSWR-protected ISM-band PA was realized using a BST based varactor for detuning of the input matching. Output VSWR levels of 30:1 can be tolerated by applying a varactor bias voltage of up to…
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate
/en/research/publications/time-dependent-failure-of-gan-on-si-power-hemts-with-p-gan-gate
This paper reports an experimental demonstration of the time-dependent failure of GaN-on-Si power high-electron-mobility transistors with p-GaN gate, submitted to a forward gate stress. By means of…
Mechanisms of Implantation Damage Formation in AlxGa1-xN Compounds
/en/research/publications/mechanisms-of-implantation-damage-formation-in-alxga1-xn-compounds
AlxGa1-xN alloys, covering the entire compositional range (0 ≤ x ≤ 1), were implanted at room temperature with 200 keV argon (Ar) ions to fluences ranging from…
Compact narrow linewidth diode laser modules for precision quantum optics experiments on board of sounding rockets
/en/research/publications/compact-narrow-linewidth-diode-laser-modules-for-precision-quantum-optics-experiments-on-board-of-sounding-rockets
We have realized a laser platform based on GaAs diode lasers that allows for an operation in mobile experimental setups in harsh environments, such as on sounding rockets. The platform comes in two…
A 330 GHz Active Frequency Quadrupler in InP DHBT Transferred-Substrate Technology
/en/research/publications/a-330-ghz-active-frequency-quadrupler-in-inp-dhbt-transferred-substrate-technology
This paper presents a wideband 330 GHz frequency quadrupler using 0.8 µm transferred substrate (TS) InP-HBT technology. The process includes a heat-spreading diamond layer, which improves…