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Group III-Nitride Epitaxy
/en/research/iii-v-technology/materials-technology/group-iii-nitride-epitaxy
The 'Epitaxy Nitrides' group works on the epitaxy for GaN-based microelectronic and optoelectronic devices
Arsenides & Phosphides Epitaxy
/en/research/iii-v-technology/materials-technology/arsenides-phosphides-epitaxy
The 'Epitaxy Arsenides & Phosphides' group works on the epitaxy for GaAs- and InP-based microelectronic and optoelectronic devices
Science Management
/en/about-us/structure/science-management
The Science Management Department acts as an interface between science, industry, and education & training within the institute. With its comprehensive services, the interdisciplinary team…
Seminars
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Time & Place Our seminars, unless otherwise indicated, take place every Friday at 1:30 pm in conference room 1 at FBH. Time & Place
Vita Ferdinand Braun
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Karl Ferdinand Braun * June 06, 1850, in Fulda (Germany) † April 20, 1918, in Brooklyn/New York (USA) Ferdinand Braun was an experimental physicist during the period of Wilhelmian…
Quality & Environment
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Those who do not strive to be better will cease being good... Not only big companies, but also small and medium-sized enterprises are increasingly outsourcing research services and assigning…
THz Science and Tech. Best Paper Award 2021
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The award is presented to a team of eleven authors from Germany, Poland and Lithuania - including five scientists from the Ferdinand-Braun-Institut.
Diamond nanopillars with incorporated single photon emitters for quantum technologies
/en/research/research-news/diamond-nanopillars-with-incorporated-single-photon-emitters-for-quantum-technologies
FBH has succeeded in fabricating nanostructures in diamond with a diameter of about 200 nm into which single quantum emitters were incorporated. These nanopillars enable the efficient collection…
Newly published: FBH brochure
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The booklet presents our range of services and provides you with a preview of the further technological possibilities opened up by our new cleanroom, covering more than 1,000 square meters.
Low power in mind: electrical and structural improvements of the Pd/p-GaN interface
/en/research/research-news/low-power-in-mind-electrical-and-structural-improvements-of-the-pdp-gan-interface
To reduce power consumption of optoelectronic devices FBH conducts researches to lower contact resistance between the contact and the semiconductor material. Focus is the contact system at the…