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Search results 801 until 810 of 1723

Finally back in Germany – 27th International Semiconductor Laser Conference

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In 2021, the renowned International Semiconductor Laser Conference (ISLC) will be held in Germany for the first time in nineteen years. The conference is scheduled 10 - 14 October in Potsdam.…

UVC light-emitting diodes to fight coronaviruses

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In the joint CORSA project, SARS-CoV-2 and further respiratory viruses on surfaces and skin are to be inactivated by using UVC light. The project team is developing special UVC LEDs for this purpose…

The impact of AlN templates on strain relaxation mechanisms in MOVPE growth of UVB-LED structures

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FBH develops UV LEDs for disinfection, e.g. to avoid infection with COVID19. To enhance output power and lifetime of such devices the impact of AlN/sapphire templates on the strain relaxation…

FBH paper selected as featured article by Applied Physics Letters

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The paper "Non-uniform longitudinal current density induced power saturation in GaAs-based high power diode lasers" by Seval Arslan et. al. was selected as featured article by the journal Applied…

Getting polymers in shape – microwave permittivity characterization

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Dielectric constant and loss tangent of polymer materials at microwave frequencies are important parameters for various industrial processes. Of particular interest is their temperature dependence.…

Podcast on the Long Night of the Sciences

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This year many things are different - also for the Long Night of the Sciences. Instead of lab tours and hands-on experiments on site, this year there will be a podcast. In episode 6 of the series the…

Secure satellite communication - Berlin team wins INNOspace Masters

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On 14 October, a Berlin-based team from TU, HU and FBH won the DLR Challenge. TMoreover, the winning project "QuMSeC" was chosen as overall winner of the INNOSpace Masters 2019/20.

Charge-shifting CCD operation enables fast Shifted Excitation Raman Difference Spectroscopy

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A charge-shifting CCD-SERDS approach using a custom 830 nm dual-wavelength diode laser and a specialized CCD overcomes technical limitations of conventional CCD operation. It reduces…

FBH’s high-performance FET-based THz detectors reach user level

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Based on its GaN HEMT MMIC process, the FBH develops state-of-the-art TeraFETs. They work at room temperature with excellent sensitivity, comparable to classical diode-based performance. The THz…

The floating-ground transistor – a key enabler for reverse-type envelope tracking systems for space applications and 5G

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The packaged floating-ground RF power GaN-HEMT is a novel patented invention developed by FBH. It allows straightforward floating-ground RF PA designs, but also opens a whole new field of GaN based…