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Lateral AlN Transistors

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GaN-based switching transistor for power-electronic applications have not yet reached their material limits with respect to on-state resistance for a given blocking voltage. One major reason are…

Vertical GaN Transistors

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Power semiconductor devices are utilized in power conversion systems and as drivers for high power optical laser systems. For such devices, a vertical topology is favorable since it…

Lateral GaN Transistors & Half Bridges

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Lateral GaN-based transistors (AlGaN/GaN HEMTs) use a two-dimensional electron gas (2DEG) as transistor channel. They enable efficient power converters with particularly high power density. Very…

InP HBT Transceivers

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Electronic component and system design FBH has established a joint laboratory Goethe-Leibniz-Terahertz-Center with Goethe University Frankfurt and foundry activities with Leibniz-Institut für…

EM Field-Simulations

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Calculation of electromagnetic fields

Radar Detectors

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As part of the Innovation Campus Electronics and Microsensor Technology Cottbus (iCampus), we are working with BTU Cottbus-Senftenberg, the Leibniz Institute for High Performance Microelectronics,…

Digital Transmitters

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At FBH, new amplifier designs are developed and existing ones are used to produce integrated power amplifier circuits and modules. These are used for e. g. satellites, base stations and measurement…

Load & Supply Modulation

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Page of the Business Aera Microwave Components & Systems

Image Service

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Please respect the copyright when using our pictures. The images on this website are intended for press purposes and may not be used commercially.  Publication is only permitted in an…

frequent - Research News from the FBH

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FBH's publication for decision makers