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Narrow Stripe Broad Area Lasers With High Order Distributed Feedback Surface Gratings
/en/research/publications/narrow-stripe-broad-area-lasers-with-high-order-distributed-feedback-surface-gratings
GaAs-based narrow-stripe broad-area lasers with integrated surface gratings are shown to operate with high power and efficiency, low beam parameter product (BPP), and narrow spectra. These…
Power Scaling of Nonlinear Frequency Converted Tapered Diode Lasers for Biophotonics
/en/research/publications/power-scaling-of-nonlinear-frequency-converted-tapered-diode-lasers-for-biophotonics
Diode lasers have proven to be versatile light sources for a wide range of applications. Nonlinear frequency conversion of high brightness diode lasers has recently resulted in visible light power…
High-Power Single-Mode Fiber Coupling of a Laterally Tapered Single-Frequency Diode Laser
/en/research/publications/high-power-single-mode-fiber-coupling-of-a-laterally-tapered-single-frequency-diode-laser
In this letter, we investigate experimentally singlemode fiber (SMF) coupling of a nondiffraction limited, astigmatic beam generated by a near-infrared distributed Bragg reflector tapered diode laser…
Micro-integrated extended cavity diode lasers for precision potassium spectroscopy in space
/en/research/publications/micro-integrated-extended-cavity-diode-lasers-for-precision-potassium-spectroscopy-in-space
We present a micro-integrated, extended cavity diode laser module for space-based experiments on potassium Bose-Einstein condensates and atom interferometry. The module emits at the wavelength of the…
Normally-off GaN Transistors for Power Applications
/en/research/publications/normally-off-gan-transistors-for-power-applications
Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by…
Bias-Dependent Pospieszalski Noise Model for GaN HEMT Devices
/en/research/publications/bias-dependent-pospieszalski-noise-model-for-gan-hemt-devices
This paper proposes a new bias-dependent description for the Pospieszalski noise model for GaN HEMT devices. It is also proposed to replace the traditional description of the drain noise temperature…
A Compact GaN-MMIC Non-Uniform Distributed Power Amplifier for 2 to 12 GHz
/en/research/publications/a-compact-gan-mmic-non-uniform-distributed-power-amplifier-for-2-to-12-ghz
A non-uniform distributed power amplifier for the frequency range from 2 to 12 GHz is presented. The coplanar GaN MMIC has 1.8 × 2.4 mm2 chip size. It achieves over the whole frequency…
2.45 GHz ISM-Band RF-PA Demonstrator for GaN-HEMT optimization
/en/research/publications/245-ghz-ism-band-rf-pa-demonstrator-for-gan-hemt-optimization
In this work empirical results of an investigation aimed at improving GaN-HEMTs for higher frequency operation are presented. Two GaN-HEMT versions with nominal 60W output power and different…
Frequency doubling of a passively mode-locked monolithic distributed Bragg reflector diode laser
/en/research/publications/frequency-doubling-of-a-passively-mode-locked-monolithic-distributed-bragg-reflector-diode-laser
In this work, frequency doubling of a passively mode-locked 3.5 mm long monolithic distributed Bragg reflector diode laser is investigated experimentally. At 1064 nm, optical pulses with a…
Dual-Wavelength Master Oscillator Power Amplifier Diode-Laser System at 785 nm
/en/research/publications/dual-wavelength-master-oscillator-power-amplifier-diode-laser-system-at-785nbspnm
A dual-wavelength master oscillator (MO) power amplifier (PA) diode-laser system emitting at 785 nm suitable for shifted excitation Raman difference spectroscopy is presented. The laser system…