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III-V Technology
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In our III-V technology research area, we bundle know-how and resources in materials, process technology, and mounting and assembling technology. These form the basis for subsequent device…
Joint Lab Power Electronics
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The Joint Lab Power Electronics is a cooperation of FBH with the Department of Power Electronics at the Institute of Energy and Automation Technology at TU Berlin. Here, we crosslink technological…
Microwave Department
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In the Microwave Department, we research the cross-sectional topics and tools required for the development of microwave circuits and modules and make them available to the labs. This comprises…
Joint Lab InP Devices
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Technically, the terahertz range (0.1 - 3 THz) in the electromagnetic spectrum below the optical frequencies is currently largely unexplored. Electronic components beyond 100 GHz are…
Joint Lab BTU-CS – FBH Microwave
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In this Joint Lab, FBH cooperates with the group of Matthias Rudolph, holder of the Ulrich-L.-Rohde Stiftungsprofessur für Hochfrequenz- und Mikrowellentechnik at the Brandenburg University of…
Digital PA Lab
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In the Digital PA Lab, we develop novel digital modulation schemes and amplifier topologies optimized for operation as power amplifier ICs and modules for the microwave range. We use both GaN-HEMT…
RF Power Lab
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The focus of our RF Power Lab is on applications with output powers in the range of 10...200 W in the microwave range below 12 GHz. Most projects use FBH packaged GaN HEMT transistors with 0.5 µm…
III-V Electronics
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Our research in III-V electronics aims at pushing the limits of electronic components in terms of efficient power generation at high frequencies, high voltages and short switching times. The…
Integrated Quantum Technology
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In our Integrated Quantum Technology Research Area, we are currently conducting R&D activities in four joint labs with Humboldt University of Berlin to transfer proof-of-concept demonstrators…
Joint Lab GaN Optoelectronics
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In the Joint Lab GaN Optoelectronics we develop innovative light emitters based on group III nitrides in close cooperation with the TU Berlin. We use the AlN-GaN-InN material system and realize…