Search
Rules for the search
- Only words with 2 or more characters are accepted
- Max 200 chars total
- Space is used to split words, "" can be used to search for a whole string (not indexed search then)
- AND, OR and NOT are prefix words, overruling the default operator
- +/|/- equals AND, OR and NOT as operators.
- All search words are converted to lowercase
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/en/research/publications/gate-reliability-investigation-in-normally-off-p-type-gan-capalgangan-hemts-under-forward-bias-stress
Gate reliability of normally-off p-type-GaN/AlGaN/GaN high-electron mobility transistors grown on Si substrate subjected to forward bias stress at different gate voltages and temperatures was…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/en/research/publications/low-absorption-loss-p-algan-superlattice-cladding-layer-for-current-injection-deep-ultraviolet-laser-diodes
Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/en/research/publications/watt-level-second-harmonic-generation-at-589nbspnm-with-a-ppmgoln-ridge-waveguide-crystal-pumped-by-a-dbr-tapered-diode-laser
A DBR tapered diode laser in continuous wave operation was used to generate second-harmonic radiation at 589 nm in a PPMgO:LN ridge waveguide crystal. An optical output power of 0.86 W at…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/en/research/publications/kinetics-of-algan-metal-organic-vapor-phase-epitaxy-for-deep-uv-applications
AlxGa1-xN layers with high aluminum content of x ∼ 0.68-0.73 were grown in an 11 × 2-in. AIX 2400 G3 HT planetary reactor by metal-organic vapor phase epitaxy. Growth trends are analyzed by…
DBR tapered diode laser with 12.7 W output power and nearly diffraction-limited, narrowband emission at 1030 nm
/en/research/publications/dbr-tapered-diode-laser-with-127-w-output-power-and-nearly-diffraction-limited-narrowband-emission-at-1030-nm
A 1030 nm distributed Bragg reflector (DBR) tapered diode laser with nearly diffraction-limited emission is presented. The laser provides an optical output power of 12.7 W with an…
Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer
/en/research/publications/multifinger-indium-phosphide-double-heterostructure-transistor-circuit-technology-with-integrated-diamond-heat-sink-layer
The RF power output of scaled subterahertz and terahertz indium phosphide double-heterostructure bipolar transistors (InP DHBTs) is limited by the thermal device resistance, which increases with the…
Benzocyclobutene dry etch with minimized byproduct redeposition for application in an InP DHBT process
/en/research/publications/benzocyclobutene-dry-etch-with-minimized-byproduct-redeposition-for-application-in-an-inp-dhbt-process
In this article we report on the reduction of redeposition during inductively coupled plasma (ICP) etching of benzocyclobutene (BCB) with a soft mask in a sulfur hexafluoride/oxygen (SF6/O2) plasma.…
Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN
/en/research/publications/correlation-of-sapphire-off-cut-and-reduction-of-defect-density-in-movpe-grown-aln
X-ray diffraction and TEM investigations of MOVPE grown AlN on sapphire with small off-cuts to a- and m-plane reveal the influence of the off-cut direction and angle on the reduction of threading…
Freely Triggerable Picosecond Pulses From a DBR Ridge Waveguide Diode Laser Near 1120 nm
/en/research/publications/freely-triggerable-picosecond-pulses-from-a-dbr-ridge-waveguide-diode-laser-near-1120-nm
In this letter, we present results on the pulsed operation of a distributed Bragg reflector ridge waveguide diode laser with wavelength close to 1120 nm. Picosecond optical pulses were generated…
0.25-µm GaN TeraFETs Optimized as THz Power Detectors and Intensity-Gradient Sensors
/en/research/publications/025-um-gan-terafets-optimized-as-thz-power-detectors-and-intensity-gradient-sensors
This letter reports on the influence of illumination conditions on the detector response of three-terminal devices. Antenna-coupled field-effect transistors for the plasmonic detection of THz…