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5,000 h reliable operation of 785 nm dual-wavelength DBR-RW diode lasers suitable for Raman spectroscopy and SERDS
/en/research/publications/5000-h-reliable-operation-of-785-nm-dual-wavelength-dbr-rw-diode-lasers-suitable-for-raman-spectroscopy-and-serds
5,000 h reliable operation of 785 nm dual-wavelength DBR-RW diode lasers suitable for Raman spectroscopy and SERDS B. Sumpf, A. Müller, M. Maiwald Ferdinand-Braun-Institut,…
Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/en/research/publications/dbr-tapered-diode-laser-at-1030-nm-with-nearly-diffraction-limited-narrowband-emission-and-127-w-of-optical-output-power
Nearly diffraction-limited emission from a distributed Bragg reflector (DBR) tapered diode laser is presented. Intrinsic wavelength stabilization is achieved with a 3rd order DBR grating manufactured…
Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/en/research/publications/novel-approaches-to-increasing-the-brightness-of-broad-area-lasers
Progress in studies to increase the lateral brightness Blat of broad area lasers is reviewed. Blat=Pout/BPPlat is maximized by developing designs and technology for lowest lateral beam parameter…
Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/en/research/publications/process-control-of-mocvd-growth-for-leds-by-in-situ-photoluminescence
Development and manufacturing of LED structures is still driven by production cost reduction and performance improvements. Therefore, in-situ monitoring during the epitaxial process plays a key role…
Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/en/research/publications/development-of-semipolar-11-22-leds-on-gan-templates
We report on blue and green light-emitting-diodes (LEDs) grown on (11-22)-GaN templates. The templates were created by overgrowth on structured r-plane sapphire substrates. Low defect density,…
Master-oscillator power-amplifier in the red spectral range for holographic displays
/en/research/publications/master-oscillator-power-amplifier-in-the-red-spectral-range-for-holographic-displays
RGB-light sources with a coherence length of several meters are required for holographic displays. Furthermore, these emitters must feature a high luminance and must be sufficiently small in size, to…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/en/research/publications/precision-uv-laser-scribing-for-cleaving-mirror-facets-of-gan-based-laser-diodes
Laser scribing with a nanosecond-pulsed UV laser operating at 355 nm was used to create precise perforation for die separation of GaN-based laser diodes. Machining depth of single- and…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/en/research/publications/normally-off-gan-hemts-with-p-type-gate-off-state-degradation-forward-gate-stress-and-esd-failure
This paper reports an analysis of the degradation mechanisms of GaN-based normally-off transistors submitted to off-state stress, forward-gate operation and electrostatic discharges. The analysiswas…
Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/en/research/publications/quantification-of-matrix-and-impurity-elements-in-alxga1-xn-compounds-by-secondary-ion-mass-spectrometry
The authors describe a comprehensive secondary ion mass spectrometry (SIMS) calibration procedure for the quantification of matrix and impurity elements of epitaxially grown AlxGa1-xN layers over the…
Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/en/research/publications/generation-of-second-harmonic-light-with-a-wavelength-of-560-nm-in-a-compact-module
We demonstrate a continuous wave 133 mW laser module at 560.5 nm on a 50 mm · 10 mm optical bench. The setup consists of a 1121 nm distributed Bragg reflector ridge…