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GaAs Laser Diodes

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In our clean rooms, we offer process lines for the production of ridge waveguide (RW), broad-area (BA) and tapered diode lasers as well as laser bars. In addition, we offer the associated…

Raman Measurement Systems

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Current research projects Our work and further developments in the field of Raman measurements currently culminate in the Innovation Campus Electronics and Microsensors Cottbus - iCampµs. Here, an…

kW Class Pump Laser Modules

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Our pump modules for high-energy-class solid-state laser systems consist of diode laser stacks, whose individual beams are shaped and combined into a beam with high energy density by means of…

Light Sources for STED & Fluorescence Spectroscopy

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High-resolution imaging techniques using fluorescent dyes are used in the biomedical field. For such applications, we are developing the suitable laser sources with an emission wavelength around…

InP-on-BiCMOS Heterointegration

/en/research/iii-v-electronics/technologies-processes/inp-bicmos-heterointegration

For system integration, terahertz circuits must be realized and connected , for example, to antenna structures. These structures and interconnections must maintain the highest possible bandwidth,…

Power Electronic Characterization

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We develop power semiconductor devices in GaN, AlN and Ga2O3 within the framework of our Joint Lab Power Electronics that we operate jointly with the Chair of Power Electronics of the Technische…

Gallium Oxide Power Transistors

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frequent - wide bandgap devices Due to the increasing demands on higher dielectric strengths of electronic components in power electronics, the FBH is intensively focusing on new semiconductor…

Lateral AlN Transistors

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GaN-based switching transistor for power-electronic applications have not yet reached their material limits with respect to on-state resistance for a given blocking voltage. One major reason are…

Vertical GaN Transistors

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Power semiconductor devices are utilized in power conversion systems and as drivers for high power optical laser systems. For such devices, a vertical topology is favorable since it…

Lateral GaN Transistors & Half Bridges

/en/research/iii-v-electronics/gan-aln-gao-based-power-electronics/lateral-gan-transistors-half-bridges

Lateral GaN-based transistors (AlGaN/GaN HEMTs) use a two-dimensional electron gas (2DEG) as transistor channel. They enable efficient power converters with particularly high power density. Very…