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Semi-polar (1122) -GaN templates grown on 100 mm trench-patterned r-plane sapphire
/en/research/publications/semipolar-1122-ingan-light-emitting-diodes-grown-on-chemically-mechanically-polished-gan-templates
InGaN multiple quantum well light-emitting diodes (LEDs) were grown on chemically-mechanically polished (1122) GaN templates (up to 100mm diameter wafers) by metalorganic vapour phase epitaxy.…
24-wavelength distributed Bragg reflector laser array with surface gratings
/en/research/publications/24-wavelength-distributed-bragg-reflector-laser-array-with-surface-gratings
A small footprint diode laser array of 24 individually addressable distributed Bragg reflector lasers is presented. Third-order gratings etched into the surface of an AlGaAs vertical waveguide…
High Beam Quality in Broad Area Lasers via Suppression of Lateral Carrier Accumulation
/en/research/publications/high-beam-quality-in-broad-area-lasers-via-suppression-of-lateral-carrier-accumulation
High power 9xx-nm broad-area lasers with improved beam quality are required for many applications, but the physical limitations remain unclear, especially the relative importance of free-carrier and…
Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N
/en/research/publications/spatial-clustering-of-defect-luminescence-centers-in-si-doped-low-resistivity-al082ga018n
A series of Si-doped AlN-rich AlGaN layers with low resistivities was characterized by a combination of nanoscale imaging techniques. Utilizing the capability of scanning electron microscopy to…
Index-Antiguiding in Narrow-Ridge GaN-Based Laser Diodes Investigated by Measurements of the Current-Dependent Gain and Index Spectra and by Self-Consistent Simulation
/en/research/publications/index-antiguiding-in-narrow-ridge-gan-based-laser-diodes-investigated-by-measurements-of-the-current-dependent-gain-and-index-spectra-and-by-self-consistent-simulation
The threshold current density of narrow (1.5 µm) ridge-waveguide InGaN multi-quantum-well laser diodes and the shape of their lateral far-field patterns strongly depend on the etch depth of the…
Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature
/en/research/publications/degradation-of-inalgan-based-uv-b-light-emitting-diodes-stressed-by-current-and-temperature
The degradation of the electrical and optical properties of (InAlGa)N-based multiple quantum well light emitting diodes (LEDs) emitting near 308 nm under different stress conditions has been…
Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive
/en/research/publications/dynamic-behaviour-of-a-low-noise-amplifier-gan-mmic-under-input-power-overdrive
This paper presents the analysis of a highly robust low-noise amplifier subjected to high input power stress conditions. The LNA is realized in coplanar technology using the 0.25µm GaN-HEMT MMIC…
A 250 GHz Hetero-Integrated VCO with 0.7 mW Output Power in InP-on-BiCMOS Technology
/en/research/publications/a-250-ghz-hetero-integrated-vco-with-07nbspmw-output-power-in-inp-on-bicmos-technology
This paper presents a 250 GHz hetero-integrated VCO using InP-on-BiCMOS technology. It consists of a singleended Colpitts Voltage Controlled Oscillator (VCO) in 0.25 µm SiGe-BiCMOS…
Optimized Method for Achieving Accurate Signals for "True-Mode" S-Parameter Measurements
/en/research/publications/optimized-method-for-achieving-accurate-signals-for-quottrue-modequot-s-parameter-measurements
Due to the capabilities of modern vector network analyzers (VNAs), the usage of "True-Mode"-signals for characterizing and testing active differential devices is quite convenient.…
Design of a Triband Lumped Element Filter for Digital Microwave Power Amplifiers
/en/research/publications/design-of-a-triband-lumped-element-filter-for-digital-microwave-power-amplifiers
In this paper, a compact lumped element triband reconstruction filter for digital microwave power amplifier (PA) applications in the 0.8, 1.8 and 2.6 GHz band is presented. The proposed design…