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AlAsP-based strain-balancing in MOVPE-grown distributed Bragg reflectors
/en/research/publications/alasp-based-strain-balancing-in-movpe-grown-distributed-bragg-reflectors
We demonstrate a way to reduce the room temperature wafer bow of AlAs/GaAs super-lattices (SL) by the addition of phosphorus forming an AlAsyP1-y/GaAs SL. In-situ monitoring of the curvature not only…
Temperature-dependent thermoelectric properties of individual silver nanowires
/en/research/publications/temperature-dependent-thermoelectric-properties-of-individual-silver-nanowires
Individual highly pure single-crystalline silver nanowires (Ag NWs) were investigated with regard to the electrical conductivity σ, the thermal conductivity λ, and the Seebeck coefficient S as a…
High-power diode lasers at 1178 nm with high beam quality and narrow spectra
/en/research/publications/high-power-diode-lasers-at-1178nbspnm-with-high-beam-quality-and-narrow-spectra
High-power distributed Bragg reflector tapered diode lasers (DBR-TPLs) at 1180 nm were developed based on highly strained InGaAs quantum wells. The lasers emit a nearly diffraction-limited beam with…
Compact high-current diode laser nanosecond-pulse source with high efficiency and 13 µJ output energy
/en/research/publications/compact-high-current-diode-laser-nanosecond-pulse-source-with-high-efficiency-and-13nbspuj-output-energy
A compact gain-switched nanosecond diode laser pulse source at 920 nm with an output energy of 13 µJ is presented. The developed nanosecond electronic driver is based on GaN transistors and…
Top- and bottom-illumination of solar-blind AlGaN metal-semiconductor-metal photodetectors
/en/research/publications/top-and-bottom-illumination-of-solar-blind-algan-metal-semiconductor-metal-photodetectors
The spectral performance of solar-blind AlxGa1-xN based metal-semiconductor-metal ultra-violet photodetectors has been measured for top- as well as bottom-illumination at different bias voltages. In…
In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures
/en/research/publications/in-situ-photoluminescence-measurements-during-movpe-growth-of-gan-and-ingan-mqw-structures
In this work we report the first quasi-continuous in-situ photoluminescence study of growing InGaN LED structures inside an industrial-grade metal-organic vapor phase epitaxy (MOVPE) reactor at…
Numerical and experimental investigations of micro-integrated external cavity diode lasers
/en/research/publications/numerical-and-experimental-investigations-of-micro-integrated-external-cavity-diode-lasers
We report the results of numerical and experimental investigations of the electrooptical behaviour of an external cavity diode laser device composed of a semiconductor laser and a distant Bragg…
Study of Microintegrated External-Cavity Diode Lasers: Simulations, Analysis, and Experiments
/en/research/publications/study-of-microintegrated-external-cavity-diode-lasers-simulations-analysis-and-experiments
This paper reports the results of numerical and experimental investigations of the dynamics of an external-cavity diode laser device composed of a semiconductor laser and an external Bragg grating,…
Efficient generation of 509 nm light by sum-frequency mixing between two tapered diode lasers
/en/research/publications/efficient-generation-of-509nbspnm-light-by-sum-frequency-mixing-between-two-tapered-diode-lasers
We demonstrate a concept for visible laser sources based on sum-frequency generation of beam combined tapered diode lasers. In this specific case, a 1.7 W sum-frequency generated green laser at…
Gain-Matched Output Couplers for Efficient Kerr-Lens Mode-Locking of Low-Cost and High-Peak Power Cr:LiSAF Lasers
/en/research/publications/gain-matched-output-couplers-for-efficient-kerr-lens-mode-locking-of-low-cost-and-high-peak-power-crlisaf-lasers
We present a detailed investigation of Kerr-lens mode-locking in diode-pumped Cr:LiSAF lasers employing gainmatched output couplers (GMOCs). Single-mode diodes (660 nm, 130 mW) and tapered…