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Passivation & Coating of Laser Facets
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We passivate GaAs laser facets using our patented process. This enables both a high output power and a high long-term stability of the lasers. After the passivation process we additionally…
Qualification of Epitaxial Layers
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We qualify epitaxial layers using a stable device process. It is well known that non-destructive material investigations as usually applied for epixial wafer characterization may not be able to…
Wafer Processes & Masks
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Technology Offer - Overview We have been successfully offering our customers individual process steps or process modules according to specific requirements for many years. For this purpose, we…
Custom Epitaxial Layers
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semiconductor layer structures for LEDs, laser diodes, transistors etc. based on (Al,In,Ga)As, (Ga,In)P and (Al,In,Ga)N according to customer specifications multi-step epitaxies for 2D or 3D…
Photodetectors for the Near to Far UV Range
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With AlGaN absorber layers, we manufacture MSM (metal-semiconductor-metal) detectors up to the VUV range. They are characterized by low dark currents in the pA range and high quantum yields of up…
GaN Diode Lasers for the Blue-Violet Spectral Range
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We develop, manufacture and qualify GaN diode lasers (400 - 420 nm) according to customer requirements. For example, the wavelength, chip design, packaging and radiation…
LEDs for the UVB- & UVC Spectral Range
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We develop, fabricate and qualify UVB and UVC LEDs according to customer specifications, e.g. in wavelength, chip design and packaging. Clients can use FBH's entire process chain, from epitaxy and…
Development & Fabrication of GaAs Diode Lasers
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We develop and fabricate tailored gallium arsenide-based diode laser chips in the wavelength range from 0.62 µm to 1.2 µm. This includes chip design, where we use state-of-the-art simulation…
III-V Electronics Systems
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Our Prototype Engineering Lab develops prototypes and models making FBH’s R&D results – among them electronic devices – usable in specific application fields. Contact Dr. Neysha…