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Electronic Frequency Tuning of a High-Power 2.45GHz GaN Oscillator
/en/research/publications/electronic-frequency-tuning-of-a-high-power-245ghz-gan-oscillator
High-power solid-state microwave oscillators are useful for various applications. However, electronic frequency tuning has been a problem so far, due to the high voltage and current swings involved.…
Robust Stacked GaN-Based Low-Noise Amplifier MMIC for Receiver Applications
/en/research/publications/robust-stacked-gan-based-low-noise-amplifier-mmic-for-receiver-applications
A robust two-stage low-noise amplifier based on GaN technology is presented. The MMIC LNA is realized using stacked transistors in the first stage to obtain high ruggedness. The LNA survived a record…
Flip-Chip Interconnects for 250 GHz Modules
/en/research/publications/flip-chip-interconnects-for-250-ghz-modules
With the increasing availability of MMICs at frequencies beyond 100 GHz low-loss interconnects for module fabrication in this frequency range become essential. This letter presents results on a…
Capability of shifted excitation Raman difference spectroscopy under ambient daylight
/en/research/publications/capability-of-shifted-excitation-raman-difference-spectroscopy-under-ambient-daylight
We present the capability of shifted excitation Raman difference spectroscopy (SERDS) under ambient daylight. A dual-wavelength diode laser emitting at 785 nm is used as the excitation light…
Passively Mode-Locked Diode Laser With Optimized Dispersion Management
/en/research/publications/passively-mode-locked-diode-laser-with-optimized-dispersion-management
We investigate passively mode-locked diode lasers with external cavity for ultrashort pulse generation. Our strategy to achieve ultrashort pulses is to generate strongly chirped pulses with a…
Linearity Analysis of Class-B/J Continuous Mode Power Amplifiers using Modulated Wideband Signals
/en/research/publications/linearity-analysis-of-class-bj-continuous-mode-power-amplifiers-using-modulated-wideband-signals
Linearity, along with efficiency and bandwidth, belongs to the fundamental requirements of power amplifiers for nowadays communications systems. This paper discusses how to bring together these…
New Output Network Design Approach for Voltage-Mode Class-S PAs
/en/research/publications/new-output-network-design-approach-for-voltage-mode-class-s-pas
This paper presents a new approach for realizing the output network of class-S power amplifiers in the 900MHz band. The idea is to use bond-wires instead of lumped inductors thus improving Q factor…
Complexity of DPD Linearization in the full RF-Band for a WiMAX Power Amplifier
/en/research/publications/complexity-of-dpd-linearization-in-the-full-rf-band-for-a-wimax-power-amplifier
In this paper, the influence of channel frequency in the RF-band on digital predistortion (DPD) is investigated empirically. A class-AB GaN-HEMT power amplifier targeting the 3.5 GHz band for…
Enhancing Dynamic Range and Accuracy of Load-Pull Measurements by Using Prematched Transistors
/en/research/publications/enhancing-dynamic-range-and-accuracy-of-load-pull-measurements-by-using-prematched-transistors
This paper describes how dynamic range and accuracy of an on-wafer load pull measurement system can be improved without costly investment in equipment. Applying prematching to the transistors on the…
70 mΩ / 600 V Normally-off GaN Transistors on SiC and Si Substrates
/en/research/publications/70-mo-600-v-normally-off-gan-transistors-on-sic-and-si-substrates
The static and dynamic electrical performance of normally-off p-GaN gate AlGaN/GaN HFETs, manufactured on SiC and on Si substrates are compared. By implementing a ptype GaN gate, normally-off…