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On-Chip Optical Components

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Real-world quantum devices require low-loss chip-based optical components to be interfaced with quantum emitters in a robust manner. Starting point of the chip fabrication is the design of low-loss…

Gallium Nitride-Based Microwave Processes

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We offer GaN-based MMIC processes for customized circuit designs in several frequency bands. Contact Dr. Oliver Hilt Phone +49 30 63922791 Email oliver.hilt@fbh-berlin.de X- and Ka-band…

Archive - Earlier Annual Reports

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Archive - Earlier frequent Editions

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Passivation & Coating of Laser Facets

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We passivate GaAs laser facets using our patented process. This enables both a high output power and a high long-term stability of the lasers. After the passivation process we additionally…

Qualification of Epitaxial Layers

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We qualify epitaxial layers using a stable device process. It is well known that non-destructive material investigations as usually applied for epixial wafer characterization may not be able to…

Wafer Processes & Masks

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Technology Offer - Overview We have been successfully offering our customers individual process steps or process modules according to specific requirements for many years. For this purpose, we…

Custom Epitaxial Layers

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semiconductor layer structures for LEDs, laser diodes, transistors etc. based on (Al,In,Ga)As, (Ga,In)P and (Al,In,Ga)N according to customer specifications multi-step epitaxies for 2D or 3D…

Photodetectors for the Near to Far UV Range

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With AlGaN absorber layers, we manufacture MSM (metal-semiconductor-metal) detectors up to the VUV range. They are characterized by low dark currents in the pA range and high quantum yields of up…

GaN Diode Lasers for the Blue-Violet Spectral Range

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We develop, manufacture and qualify GaN diode lasers (400 - 420 nm) according to customer requirements. For example, the wavelength, chip design, packaging and radiation…