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Modal Behavior of an External Cavity Diode Laser
/en/research/publications/modal-behavior-of-an-external-cavity-diode-laser
This paper reports the results of numerical investigations of the modal behavior of an external cavity diode laser device composed of a semiconductor laser and a distant Bragg grating, which provides…
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
/en/research/publications/strongly-transverse-electric-polarized-emission-from-deep-ultraviolet-algan-quantum-well-light-emitting-diodes
The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented AlxGa1-xN multiple quantum wells (MQWs) has been studied by simulations and…
High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications
/en/research/publications/high-temperature-performances-of-normally-off-p-gan-gate-algangan-hemts-on-sic-and-si-substrates-for-power-applications
We analyse high temperature effects (up to 420°C) in the performances of p-GaN gate normally-off AlGaN/GaN HEMTs on Si and SiC substrates for power applications. With increasing temperature, IDMAX…
Progress in the development of kilowatt-class diode laser bars for pump applications
/en/research/publications/progress-in-the-development-of-kilowatt-class-diode-laser-bars-for-pump-applications
Progress in diode laser pump bars is presented. Powers above 1 kW per bar are confirmed at 880 nm, and 940...980 nm, with operating efficiency ~50%. Operation at 200 K increases…
The Influence of Differential Modal Gain on the Filamentary Behavior of Broad Area Diode Lasers
/en/research/publications/the-influence-of-differential-modal-gain-on-the-filamentary-behavior-of-broad-area-diode-lasers
High power diode lasers with low modal gain (∼4 cm-1), predicted to operate with very low filamentation, are shown to operate with near-field modulation depth half that of reference devices…
Limitations to brightness in high power laser diodes
/en/research/publications/limitations-to-brightness-in-high-power-laser-diodes
A review is presented on how diagnostic studies, technological and design improvements and novel device configurations have enabled a more than fourfold improvement in lateral brightness in high…
Joule-Class 940 nm Diode Laser Bars for Millisecond Pulse Applications
/en/research/publications/joule-class-940-nm-diode-laser-bars-for-millisecond-pulse-applications
Diode laser bars with optimized epitaxial designs, long resonators and passivated facets deliver joule-class millisecond pulses (kilowatts of peak power) with the properties needed by advanced…
Spatial inhomogeneities in AlxGa1-xN quantum wells induced by the surface morphology of AlN/sapphire templates
/en/research/publications/spatial-inhomogeneities-in-alxga1-xn-quantum-wells-induced-by-the-surface-morphology-of-alnsapphire-templates
The effects of the template on the optical and structural properties of Al0.75Ga0.25N/Al0.8Ga0.2N multiple quantum well (MQWs) laser active regions have been investigated. The laser structures for…
V-pit to truncated pyramid transition in AlGaN-based heterostructures
/en/research/publications/v-pit-to-truncated-pyramid-transition-in-algan-based-heterostructures
The formation of three-dimensional truncated pyramids after the deposition of AlN/GaN superlattices onto (0001) AlN/sapphire templates has been analysed by atomic force microscopy as well as…
Compact Handheld Probe for Shifted Excitation Raman Difference Spectroscopy with Implemented Dual-Wavelength Diode Laser at 785 Nanometers
/en/research/publications/compact-handheld-probe-for-shifted-excitation-raman-difference-spectroscopy-with-implemented-dual-wavelength-diode-laser-at-785nbspnanometers
A compact handheld probe for shifted-excitation Raman difference spectroscopy (SERDS) with an implemented dual-wavelength diode laser with an emission at 785 nm is presented. The probe is milled…