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An Efficient 290 GHz Harmonic Oscillator in Transferred-Substrate InP-DHBT Technology
/en/research/publications/an-efficient-290-ghz-harmonic-oscillator-in-transferred-substrate-inp-dhbt-technology
This paper presents a single-ended efficient 290 GHz harmonic oscillator, realized using 0.8 µm transferred-substrate (TS) InP-DHBT technology. The architecture of this oscillator is based…
Discrete RF-Power MIM BST Thick-Film Varactors
/en/research/publications/discrete-rf-power-mim-bst-thick-film-varactors
Discrete high power RF varactors based on barium-strontium-titanate are presented in this paper. They are targeting high power applications up to 3 GHz and feature power handling capabilities up…
A Compact Tri-Band GaN Voltage-Mode Class-D/S PA for Future 0.8/1.8/2.6 GHz LTE Picocell Applications
/en/research/publications/a-compact-tri-band-gan-voltage-mode-class-ds-pa-for-future-081826-ghz-lte-picocell-applications
This paper presents a compact tri-band voltage-mode class-S power amplifier module suitable for the LTE frequency bands of 0.8, 1.8 and 2.6 GHz. The demonstrator uses a broadband GaN…
Linearity Analysis of a 40 W Class-G-Modulated Microwave Power Amplifier
/en/research/publications/linearity-analysis-of-a-40-w-class-g-modulated-microwave-power-amplifier
In this paper, a class-G power amplifier is presented. It consists of a discrete class-G supply modulator, which uses a GaN-HEMT for switching, connected to a 2.65 GHz power amplifier with…
Tunable In-package Impedance Matching for High Power Transistors based on Printed Ceramics
/en/research/publications/tunable-in-package-impedance-matching-for-high-power-transistors-based-on-printed-ceramics
This work addresses tunable matching networks (TMN) for in-package integration of RF-power transistors, fabricated on functional thick film layers of Barium-Strontium-Titanate (BST). The deposition…
Frequency-Agile Packaged GaN-HEMT using MIM Thickfilm BST Varactors
/en/research/publications/frequency-agile-packaged-gan-hemt-using-mim-thickfilm-bst-varactors
Nowadays wireless communication systems demand flexibility along with electrical efficiency. In this work the highly efficient GaN-HEMT technology is combined with electrically tunable…
High-Sensitivity Wideband THz Detectors Based on GaN HEMTs with Integrated Bow-Tie Antennas
/en/research/publications/high-sensitivity-wideband-thz-detectors-based-on-gan-hemts-with-integrated-bow-tie-antennas
This paper reports on antenna-coupled field-effect transistors for the detection of terahertz radiation (TeraFETs), based on AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs are…
G-Band Frequency Doubler based on InP Transferred-Substrate Technology
/en/research/publications/g-band-frequency-doubler-based-on-inp-transferred-substrate-technology
A G-band broadband frequency doubler based on InP transferred-substrate (TS) InP-DHBT technology is presented. The MMIC utilizes a two 2-finger HBTs with a total emitter size of…
Solar-blind AlGaN MSM photodetectors with 24% external quantum efficiency at 0 V
/en/research/publications/solar-blind-algan-msm-photodetectors-with-24-external-quantum-efficiency-at-0-v
By utilising an asymmetric metallisation scheme to fabricate an AlGaN-based solar-blind metal-semiconductor-metal photodetector, a zero-bias external quantum efficiency (EQE) of 24% for illumination…
UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates
/en/research/publications/uv-c-lasing-from-algan-multiple-quantum-wells-on-different-types-of-alnsapphire-templates
AlGaN multiple quantum well lasers for optical pumping have been grown by metal-organic vapor phase epitaxy on high and low dislocation density AlN/sapphire templates. Lasers on planar templates…