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Shifted Excitation Raman Difference Spectroscopy using a Dual-Wavelength DBR Diode Laser at 785 nm
/en/research/publications/shifted-excitation-raman-difference-spectroscopy-using-a-dual-wavelength-dbr-diode-laser-at-785-nm
The application of shifted excitation Raman difference spectroscopy (SERDS) using a dual wavelength distributed Bragg reflector (DBR) diode laser at 785 nm will be presented. Both excitation…
Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs
/en/research/publications/trapping-processes-related-to-iron-and-carbon-doping-in-algangan-power-hemts
This paper reviews our recent results on the impact of iron and carbon compensation on the dynamic performance of GaN-HEMTs; based on pulsed and transient characterization, we demonstrate that: (i)…
Generation of third harmonic picosecond pulses at 355 nm by sum frequency mixing in periodically poled MgSLT crystal
/en/research/publications/generation-of-third-harmonic-picosecond-pulses-at-355-nm-by-sum-frequency-mixing-in-periodically-poled-mgslt-crystal
Third harmonic 355nm picosecond pulses are generated by sum frequency mixing in a periodically poled magnesium doped stoichiometric lithium tantalate (PPMgSLT) crystal. The third harmonic generation…
Shifted Excitation Raman Difference Spectroscopy - a potential tool for outdoor measurements in precision agriculture
/en/research/publications/shifted-excitation-raman-difference-spectroscopy-a-potential-tool-for-outdoor-measurements-in-precision-agriculture
In this work we present Shifted Excitation Raman Difference Spectroscopy (SERDS) as a potential spectroscopic tool for outdoor measurements in precision agriculture. A dual-wavelength diode laser at…
25-W Monolithic Spectrally Stabilized 975-nm Minibars for Dense Spectral Beam Combining
/en/research/publications/25-w-monolithic-spectrally-stabilized-975-nm-minibars-for-dense-spectral-beam-combining
Low-fill-factor laser bars composed of five narrow-stripe broad-area lasers (30 µm × 6000 µm) with monolithic spectral stabilization are presented. Each laser on the bar emits at…
Joule-Class 940-nm Diode Laser Bars for Millisecond Pulse Applications
/en/research/publications/joule-class-940-nm-diode-laser-bars-for-millisecond-pulse-applications-1
The use of long resonators (for improved thermal and electrical resistance) and advanced facet passivation (for high power) is shown to enable Joule-class pulse emission from single passively cooled…
Thermal characterization of AlGaN/GaN HEMTs on Si and n-SiC substrates
/en/research/publications/thermal-characterization-of-algangan-hemts-on-si-and-n-sic-substrates
The thermal properties of large periphery 60 mΩ AlGaN/GaN HEMTs fabricated on Si and SiC substrates have been studied by applying pulsed Ids characterization at varying base plate temperatures and by…
Current Dispersion in Short Channel AlGaN/GaN HEMTs
/en/research/publications/current-dispersion-in-short-channel-algangan-hemts
This work presents investigations of the dynamic behavior of short channel AlGaN/GaN HEMTs with Lg varying from 100 nm to 200 nm. Transistors were fabricated using AlGaN/GaN epitaxial structures with…
High-Power Distributed Feedback Lasers With Surface Gratings: Theory and Experiment
/en/research/publications/high-power-distributed-feedback-lasers-with-surface-gratings-theory-and-experiment
Semiconductor lasers with integrated surface gratings are known to operate with narrow spectra as well as high power and efficiency. In this paper, we present a theoretical description of DFB lasers…
Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer
/en/research/publications/improved-thermal-management-of-inp-transistors-in-transferred-substrate-technology-with-diamond-heat-spreading-layer
A method to improve the thermal management of indium phosphide (InP) double-hetero bipolar transistors (DHBTs) fabricated in a transferred- substrate technology is presented. A vapour-phase deposited…