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A physics-based model of hyperabrupt varactors for nonlinear transmission line applications
/en/research/publications/a-physics-based-model-of-hyperabrupt-varactors-for-nonlinear-transmission-line-applications
This article presents a physics-based varactor-diode model for exponentially graded doping profiles. The capacitance–voltage characteristic and the bias dependence of the series resistance are…
Low-dispersion thin-film microstrip lines with cyclotene (benzocyclobutene) as dielectric medium
/en/research/publications/low-dispersion-thin-film-microstrip-lines-with-cyclotene-benzocyclobutene-as-dielectric-medium
We report on thin-film microstrip lines (TFMSLs) fabricated on low-resistivity Si with polymerized cyclotene as the dielectric between signal and ground conductor, all on top of the wafer.…
Entanglement dynamics of photon pairs and quantum memories in the gravitational field of the earth
/en/research/publications/entanglement-dynamics-of-photon-pairs-and-quantum-memories-in-the-gravitational-field-of-the-earth
We investigate the effect of entanglement dynamics due to gravity – the basis of a mechanism of universal decoherence – for photonic states and quantum memories in Mach-Zehnder and Hong-Ou-Mandel…
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors
/en/research/publications/correlating-interface-and-border-traps-with-distinctive-features-of-c-v-curves-in-vertical-al2o3gan-mos-capacitors
In this article, we present an analysis of the correlation between interface traps (ITs) and border traps (BTs) on distinctive features of C–V curves in vertical Al2O3/gallium-nitride (GaN) MOS…
Process optimisation of MOVPE growth by numerical modelling of transport phenomena including thermal radiation
/en/research/publications/process-optimisation-of-movpe-growth-by-numerical-modelling-of-transport-phenomena-including-thermal-radiation
A global transport model for the MOVPE of III–V growth based on the finite volume solution of coupled flow, heat and mass transfer, including detailed radiative transfer, multicomponent diffusion and…
The effective frequency method in the analysis of vertical-cavity surface-emitting lasers
/en/research/publications/the-effective-frequency-method-in-the-analysis-of-vertical-cavity-surface-emitting-lasers
An effective index model for vertical-cavity surface-emitting lasers (VCSEL's) is reexamined. In a systematic manner, the basic equations are derived. Instead of effective indices of plane reference…
Guest Editorial Special Issue on Globalization in Photonics
/en/research/publications/guest-editorial-special-issue-on-globalization-in-photonics
We highlight in this special issue some of the excellent work and advances in photonics which are taking place world-wide. The papers also emphasize how the photonics field in general and the…
Properties and fabrication of high-order Bragg gratings for wavelength stabilization of diode lasers
/en/research/publications/properties-and-fabrication-of-high-order-bragg-gratings-for-wavelength-stabilization-of-diode-lasers
We report further progress in the design and fabrication of high-order Bragg gratings defined by I-line projection lithography that are implemented in a high-power diode laser. Simulations of surface…
MOVPE growth of GaInP/GaAs hetero-bipolar-transistors using CBr4 as carbon dopant source
/en/research/publications/movpe-growth-of-gainpgaas-hetero-bipolar-transistors-using-cbr4-as-carbon-dopant-source
Carbon doping of GaAs with carbon tetrabromide (CBr4) in low pressure MOVPE has been investigated and applied to the fabrication of HBTs. Especially the hydrogen incorporation and the associated…
Growth monitoring by reflectance anisotropy spectroscopy in MOVPE reactors for device fabrication
/en/research/publications/growth-monitoring-by-reflectance-anisotropy-spectroscopy-in-movpe-reactors-for-device-fabrication
Reflectance anisotropy spectroscopy (RAS) has proved its capability to study surface processes during metalorganic vapour phase epitaxy (MOVPE) growth of a variety of III–V compounds. However, these…