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Comparison of two concepts for dual-wavelength DBR ridge waveguide diode lasers at 785 nm suitable for shifted excitation Raman difference spectroscopy
/en/research/publications/comparison-of-two-concepts-for-dual-wavelength-dbr-ridge-waveguide-diode-lasers-at-785-nm-suitable-for-shifted-excitation-raman-difference-spectroscopy
Two concepts of dual-wavelength 785-nm DBR ridge waveguide (RW) lasers, i.e. RW mini-arrays consisting of two DBR-RW lasers and Y-branch DBR-RW lasers, will be compared with respect to their…
Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms
/en/research/publications/controlled-pore-formation-on-mesoporous-single-crystalline-silicon-nanowires-threshold-and-mechanisms
Silicon nanowires are prepared by the method of the two-step metal-assisted wet chemical etching. We analyzed the structure of solid, rough, and porous nanowire surfaces of boron-doped silicon…
Enhanced quantum efficiency of AlGaN photodetectors by patterned growth
/en/research/publications/enhanced-quantum-efficiency-of-algan-photodetectors-by-patterned-growth
Al0.45Ga0.55N metal-semiconductor-metal photodetectors were grown by MOVPE on planar and on stripe patterned epitaxial laterally overgrown (ELO) AlN/sapphire templates. By comparing devices on…
In-situ observation of InGaN quantum well decomposition during growth of laser diodes
/en/research/publications/in-situ-observation-of-ingan-quantum-well-decomposition-during-growth-of-laser-diodes
The deterioration of the InGaN active region of laser diode structures emitting around 440 nm is observed in-situ during epitaxial growth and analyzed ex-situ by cathodoluminescence spectroscopy…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/en/research/publications/lateral-resolution-of-nanoscaled-images-delivered-by-surface-analytical-instruments-application-of-the-bam-l200-certified-reference-material-and-related-iso-standards
The certified reference material BAM-L200, a nanoscale stripe pattern for length calibration and specification of lateral resolution, is described. BAM-L200 is prepared from a cross-sectioned…
Ultra-Narrow Linewidth, External Cavity Diode Laser Module for Space-Applications
/en/research/publications/ultra-narrow-linewidth-external-cavity-diode-laser-module-for-space-applications
Recent developments in cold atom-based quantum optical sensors show promising perspectives for experiments in microgravity [1] and space environments i.e. test of the equivalence principle.…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/en/research/publications/design-of-a-dual-species-atom-interferometer-for-space
Atom interferometers have a multitude of proposed applications in space including precise measurements of the Earth’s gravitational field, in navigation & ranging, and in fundamental physics such…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/en/research/publications/self-optimizing-femtosecond-semiconductor-laser
A self-optimizing approach to intra-cavity spectral shaping of external cavity mode-locked semiconductor lasers using edge-emitting multi-section diodes is presented. An evolutionary algorithm…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/en/research/publications/single-mode-master-oscillator-power-amplifier-at-647-nm-with-more-than-500-mw-output-power
Using an AlGaInP-based truncated tapered power amplifier, it was possible to boost the output power of a 647-nm distributed Bragg reflector laser from 50 mW to more than 500 mW. The light source has…
Semi-polar (1122) -GaN templates grown on 100 mm trench-patterned r-plane sapphire
/en/research/publications/semi-polar-1122-gan-templates-grown-on-100nbspmm-trench-patterned-r-plane-sapphire
This report describes the successful realization of high-quality semi-polar (1122) -GaN templates grown on 100mm diameter r-plane patterned sapphire. Trench patterning is accomplished by plasma…