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Hybrid semiconductor master-oscillator power-amplifiers with more than 5 W optical output power
/en/research/publications/hybrid-semiconductor-master-oscillator-power-amplifiers-with-more-than-5-w-optical-output-power
Hybrid semiconductor master-oscillator power-amplifiers with more than 5 W optical output power G. Blume, A. Müller, P. Hildenstein, N. Werner, A. Maaßdorf, D. Feise,…
FBH publication among the top 10 % of downloads
/en/media-center/press-releases/fbh-paper-among-the-top-10-of-downloads
The publication “Au-Free Ohmic Contact for GaN High-Electron-Mobility Transistors” by Hossein Yazdani, Serguei Chevtchenko, Frank Brunner, Günther Tränkle, and Joachim Würfl stands out as one of the…
New pioneering Leibniz Lab to combat pandemics: Pandemic Preparedness
/en/media-center/press-releases/new-pioneering-leibniz-lab-to-combat-pandemics
The Leibniz Lab Pandemic Preparedness: One Health, One Future connects excellent inter- and transdisciplinary research. FBH contributes its expertise in the development of innovative UV…
Miniaturizing a coherent beam combining system into a compact laser diode module
/en/research/publications/miniaturizing-a-coherent-beam-combining-system-into-a-compact-laser-diode-module
We present a laser module with dimensions of 76×43×15mm3 that for the first time to our knowledge realizes a coherent beam combination in such a compact device, using two tapered amplifiers seeded by…
AES Depth Profiling of Semiconducting Epitaxial Layers with Thicknesses in the Nanometre Range Using an Ion Beam Bevelling Technique
/en/research/publications/aes-depth-profiling-of-semiconducting-epitaxial-layers-with-thicknesses-in-the-nanometre-range-using-an-ion-beam-bevelling-technique
An ion beam technique has been developed that allows the preparation of bevels from semiconducting hetero-epitaxial structures with smooth surfaces and very shallow angles between 0.1° and…
Eigen mode solver for microwave transmission lines
/en/research/publications/eigen-mode-solver-for-microwave-transmission-lines
The electromagnetic properties of microwave transmission lines can be described using Maxwell’s equations in the frequency domain. Applying a finite-volume scheme results in an algebraic eigenvalue…
SiGe MMIC’s - on the Current State-of-the-Art
/en/research/publications/sige-mmics-on-the-current-state-of-the-art
In recent years, the frequency limits of SiGe Heterostructure Bipolar Transistors (HBTs) have been extended to frequencies above 50 GHz. This opens new perspectives for Si-based monolithic…
Stable operation of InGaAs/InGaP/AlGaAs (λ = 1020 nm) laser diodes
/en/research/publications/stable-operation-of-ingaasingapalgaas-lambda-1020-nm-laser-diodes
The facet degradation of InGaAs/GaAs/AlGaAs ridge waveguide (RW) laser diodes was suppressed by replacing the AlGaAs waveguide layers with a InGaP lattice matched to GaAs. The long-term behaviour of…
Nonlinear modeling of SiGe HBTs up to 50 GHz
/en/research/publications/nonlinear-modeling-of-sige-hbts-up-to-50-ghz
A new large-signal model for SiGe heterostructure bipolar transistors (HBT’s) is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted…
FDTD Analysis of Submillimeter-Wave CPW with Finite-Width Ground Metallization
/en/research/publications/fdtd-analysis-of-submillimeter-wave-cpw-with-finite-width-ground-metallization
The dispersion and attenuation characteristics of conductor-backed coplanar transmission lines with finite-width ground metallizations are studied in the frequency range up to 1 THz. The…