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Gallium-Nitride Diode Lasers
/en/research/photonics/chips-laser-leds/gan-diode-lasers
We develop diode lasers based on the (InAlGa)N material system. We specifically tune their properties to the respective field of application - such as atomic spectroscopy or atomic clocks for…
InP Ultra-Broadband Components
/en/research/iii-v-electronics/terahertz-components-modules/inp-ultra-broadband-components
We develop ultra-wideband traveling-wave amplifiers (TWA) and wideband transimpedance amplifiers (TIA) with excellent characteristics. They are realized using our transfer substrate InP-DHBT…
Power Electronic Devices with Wide-Bandgap Semiconductors
/en/research/iii-v-electronics/technologies-processes/microwave-power-devices
We have developed a GaN device process for power-electronic transistors and half-bridges and operate a process technology for normally-off 650 V GaN switching transistors. Contact Dr.…
Velektronik | Trustworthy Electronics
/en/research/iii-v-electronics/technologies-processes/velektronik-trustworthy-electronics
The overall objective of the Velektronik project is to create a platform for "trustworthy electronics", in order to strengthen technological sovereignty for German industry and the public sector.…
Indium Phosphide HBT Process
/en/research/iii-v-electronics/technologies-processes/inp-hbt-process
The terahertz region (0.1 - 3 THz) is located in the electromagnetic spectrum below the optical frequencies. To date, the terahertz band is mostly unused for a lack of suitable electronic…
Fast Switching GaN Power Cores
/en/research/iii-v-electronics/gan-aln-gao-based-power-electronics/fast-switching-gan-power-cores
Lateral GaN transistors feature very high cut-off frequencies up to the 10 GHz range because of their very small device capacitances and their small gate charge. That's why they are an optimum…
GaN Power Converters
/en/research/iii-v-electronics/gan-aln-gao-based-power-electronics/gan-power-converters
Demonstrating the potential of our GaN power-switching transistors is one of the targets of the Joint Lab Power Electronics that is run jointly by Technische Universität Berlin and FBH. Contact …
Heating with Microwaves – KuBiMikE
/en/research/iii-v-electronics/rf-competence-applications/heating-with-microwaves
In the ProFIT project KuBiMikE (Kunststoff-Biegeverfahren mit Mikrowellen-Erwärmung), the Ferdinand-Braun-Institut is cooperating with the company mobitec - Kottmann + Berger GmbH to develop a…
Microwave Plasma Sources
/en/research/iii-v-electronics/rf-competence-applications/microwave-plasma
Microwave plasma sources are particularly interesting for two application areas: On the one hand, for low-pressure plasma technology, which is used in a wide variety of industrial applications…
Defect Engineering
/en/research/quantum-technology/photonic-quantum-technologies/defect-engineering
Stacking different two-dimensional (2D) materials like graphene into vertical heterostructures is expected to lead to atomically thin electronic and sensing devices. These include ultra-steep slope…