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Ultra-narrow linewidth DFB-laser with optical feedback from a monolithic confocal Fabry-Perot cavity
/en/research/publications/ultra-narrow-linewidth-dfb-laser-with-optical-feedback-from-a-monolithic-confocal-fabry-perot-cavity
We present a compact, ultra-narrow-linewidth semiconductor laser based on a 780 nm distributed feedback diode laser optically selflocked to a mode of an external monolithic confocal Fabry-Perot…
Distributed Bragg Reflector Ridge Waveguide Lasers Emitting Longitudinal Single Mode at 647 nm
/en/research/publications/distributed-bragg-reflector-ridge-waveguide-lasers-emitting-longitudinal-single-mode-at-647nbspnm
Single-mode red emitting diode lasers are still not readily available for many wavelengths. Here, we present diode lasers near the krypton ionwavelength of 647.1 nm, which exhibit a lateral and…
High-power, micro-integrated diode laser modules at 767 and 780 nm for portable quantum gas experiments
/en/research/publications/high-power-micro-integrated-diode-laser-modules-at-767-and-780nbspnm-for-portable-quantum-gas-experiments
We present micro-integrated diode laser modules operating at wavelengths of 767 and 780 nm for cold quantum gas experiments on potassium and rubidium. The master-oscillator-power-amplifier…
Intracavity Loss and Dispersion Managed Mode-Locked Diode Laser
/en/research/publications/intracavity-loss-and-dispersion-managed-mode-locked-diode-laser
We present a self-optimizing diode laser, which generates 216 fs Fourier-limited pulses after external pulse compression. This is achieved by a closed-loop learning concept that optimizes the…
Ultra-Narrow Linewidth, Micro-Integrated Semiconductor External Cavity Diode Laser Module for Quantum Optical Sensors in Space
/en/research/publications/ultra-narrow-linewidth-micro-integrated-semiconductor-external-cavity-diode-laser-module-for-quantum-optical-sensors-in-space
We present an external-cavity-diode-laser for quantum sensor applications based on distributed feedback diode laser with resonant feedback from an external cavity. The intrinsic linewidth is…
Concept for power scaling second harmonic generation using a cascade of nonlinear crystals
/en/research/publications/concept-for-power-scaling-second-harmonic-generation-using-a-cascade-of-nonlinear-crystals
Within the field of high-power second harmonic generation (SHG), power scaling is often hindered by adverse crystal effects such as thermal dephasing arising from the second harmonic (SH) light,…
A Flexible GaN MMIC Enabling Digital Power Amplifiers for the Future Wireless Infrastructure
/en/research/publications/a-flexible-gan-mmic-enabling-digital-power-amplifiers-for-the-future-wireless-infrastructure
This paper presents a GaN power-switch MMIC and demonstrates its potential and its versatility in realizing power amplifier (PA) modules for future LTE base station transmitters with an increased…
A 330 GHz Hetero-Integrated Source in InP-on-BiCMOS Technology
/en/research/publications/a-330-ghz-hetero-integrated-source-in-inp-on-bicmos-technology
This paper presents a 330 GHz heterointegrated signal source using InP-on-BiCMOS technology. It consists of a fundamental Voltage Controlled Oscillator (VCO) in 0.25 µm BiCMOS technology…
Electronic Frequency Tuning of a High-Power 2.45GHz GaN Oscillator
/en/research/publications/electronic-frequency-tuning-of-a-high-power-245ghz-gan-oscillator
High-power solid-state microwave oscillators are useful for various applications. However, electronic frequency tuning has been a problem so far, due to the high voltage and current swings involved.…
Robust Stacked GaN-Based Low-Noise Amplifier MMIC for Receiver Applications
/en/research/publications/robust-stacked-gan-based-low-noise-amplifier-mmic-for-receiver-applications
A robust two-stage low-noise amplifier based on GaN technology is presented. The MMIC LNA is realized using stacked transistors in the first stage to obtain high ruggedness. The LNA survived a record…