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AES Depth Profiling of Semiconducting Epitaxial Layers with Thicknesses in the Nanometre Range Using an Ion Beam Bevelling Technique
/en/research/publications/aes-depth-profiling-of-semiconducting-epitaxial-layers-with-thicknesses-in-the-nanometre-range-using-an-ion-beam-bevelling-technique
An ion beam technique has been developed that allows the preparation of bevels from semiconducting hetero-epitaxial structures with smooth surfaces and very shallow angles between 0.1° and 0.001&d
Eigen mode solver for microwave transmission lines
/en/research/publications/eigen-mode-solver-for-microwave-transmission-lines
The electromagnetic properties of microwave transmission lines can be described using Maxwell’s equations in the frequency domain. Applying a finite-volume scheme results in an algebraic eigenvalue pr
Ticket zum neuen Job in der Wahlheimat
/en/media-center/media-review/ticket-zum-neuen-job-in-der-wahlheimat
Als einzigartiges Erfolgsprojekt, das sich permanent am aktuellen Bedarf der Unternehmen orientiert und sich durch seine sehr große Nähe zum Arbeitsmarkt auszeichnet, charakterisierte der Vorsitzende
SiGe MMIC’s - on the Current State-of-the-Art
/en/research/publications/sige-mmics-on-the-current-state-of-the-art
In recent years, the frequency limits of SiGe Heterostructure Bipolar Transistors (HBTs) have been extended to frequencies above 50 GHz. This opens new perspectives for Si-based monolithic circui
Stable operation of InGaAs/InGaP/AlGaAs (λ = 1020 nm) laser diodes
/en/research/publications/stable-operation-of-ingaasingapalgaas-lambda-1020-nm-laser-diodes
The facet degradation of InGaAs/GaAs/AlGaAs ridge waveguide (RW) laser diodes was suppressed by replacing the AlGaAs waveguide layers with a InGaP lattice matched to GaAs. The long-term behaviour of s
Nonlinear modeling of SiGe HBTs up to 50 GHz
/en/research/publications/nonlinear-modeling-of-sige-hbts-up-to-50-ghz
A new large-signal model for SiGe heterostructure bipolar transistors (HBT’s) is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted from
FDTD Analysis of Submillimeter-Wave CPW with Finite-Width Ground Metallization
/en/research/publications/fdtd-analysis-of-submillimeter-wave-cpw-with-finite-width-ground-metallization
The dispersion and attenuation characteristics of conductor-backed coplanar transmission lines with finite-width ground metallizations are studied in the frequency range up to 1 THz. The finite-d
A physics-based model of hyperabrupt varactors for nonlinear transmission line applications
/en/research/publications/a-physics-based-model-of-hyperabrupt-varactors-for-nonlinear-transmission-line-applications
This article presents a physics-based varactor-diode model for exponentially graded doping profiles. The capacitance–voltage characteristic and the bias dependence of the series resistance are discuss
Low-dispersion thin-film microstrip lines with cyclotene (benzocyclobutene) as dielectric medium
/en/research/publications/low-dispersion-thin-film-microstrip-lines-with-cyclotene-benzocyclobutene-as-dielectric-medium
We report on thin-film microstrip lines (TFMSLs) fabricated on low-resistivity Si with polymerized cyclotene as the dielectric between signal and ground conductor, all on top of the wafer. Electro-opt
Entanglement dynamics of photon pairs and quantum memories in the gravitational field of the earth
/en/research/publications/entanglement-dynamics-of-photon-pairs-and-quantum-memories-in-the-gravitational-field-of-the-earth
We investigate the effect of entanglement dynamics due to gravity – the basis of a mechanism of universal decoherence – for photonic states and quantum memories in Mach-Zehnder and Hong-Ou-Mandel inte