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Chip-integrated solution based on diamond NV centers – enabling compact magnetic field cameras with simplified measuring principle
/en/research/research-news/chip-integrated-solution-based-on-diamond-nv-centers-enabling-compact-magnetic-field-cameras-with-simplified-measuring-principle
Imaging weak magnetic fields as produced by electric pulses that propagate through nerves requires complex and expensive devices. With our on-chip multi-pixel sensor, we have developed a novel paradig
Defects, performance and reliability in UV-C LEDs
/en/research/publications/defects-performance-and-reliability-in-uv-c-leds
Defects, performance and reliability in UV-C LEDs M. Meneghini1,2, N. Roccato1, F. Piva1, M. Pilati1, C. De Santi1, M. Buffolo1, N. Susilo3, D. Hauer
Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States
/en/research/publications/optical-gain-in-algan-quantum-wells-impact-of-higher-energy-states
Simulations of optical gain in aluminum gallium nitride (AlGaN) quantum wells are extended to the high charge carrier density regime required for achieving gain at 275 nm for UV laser diodes. Cou
QNC Summit & FMD Innovation Day
/en/events/default-6a0aea039dc221f1f75b35cbc85fab9c
Research Fab Microelectronics Germany (FMD) is organizing a double event on the key topic of "quantum & neuromorphic computing". FBH is participating on 25.05.24 with a double lecture Research &am
Far-UVC LEDs – From epitaxial growth & heterostructure optimization to enhanced light extraction by µ-LEDs
/en/events/far-uvc-leds-from-epitaxial-growth-heterostructure-optimization-to-enhanced-light-extraction-by-u-leds
Dr. Tim Kolbe & Dr. Jens Raß Ferdinand-Braun-Institut
Joint publication chosen as a highlight paper in 2023
/en/media-center/press-releases/gemeinsame-veroeffentlichung-als-highlight-papier-2023-ausgewaehlt
“High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression” by authors from IKZ and FBH has been specially selected as one the 2023 highlight papers in the Japanese Journal
QUICK3 - Design of a Satellite-Based Quantum Light Source for Quantum Communication and Extended Physical Theory Tests in Space
/en/research/publications/quick3-design-of-a-satellite-based-quantum-light-source-for-quantum-communication-and-extended-physical-theory-tests-in-space
Modern quantum technologies have matured such that they can now be used in space applications, e.g., long-distance quantum communication. Here, the design of a compact true single photon source is pre
Determining GaN HEMT Trap Models from MHz Load-line Measurement — A Case Study
/en/research/publications/determining-gan-hemt-trap-models-from-mhz-load-line-measurement-a-case-study
GaN HEMTs are known to suffer from trapping effects that lead to a reduction in current density depending on previously applied drain voltages. Characterization of the effect currently requires expens
Micro-integrated diode laser modules for operation in quantum technology applications
/en/research/publications/micro-integrated-diode-laser-modules-for-operation-in-quantum-technology-applications
Micro-integrated diode laser modules for operation in quantum technology applications J. Hirsch, M. Bursy, M. Gärtner, S. Gerken, N. Goossen-Schmidt, J. Hamperl, S.
High-Temperature Annealing of Si-Doped AlGaN
/en/research/publications/high-temperature-annealing-of-si-doped-algan
This study explores the impact of Si doping on the material properties of high-temperature annealed (HTA) Al0.71Ga0.29N layers, which are grown on AlN/sapphire templates. The AlGaN layers are doped wi