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Influence of growth temperature and substrate orientation on the layer properties of MOVPE-grown (GaIn)(AsP)/GaAs
/en/research/publications/influence-of-growth-temperature-and-substrate-orientation-on-the-layer-properties-of-movpe-grown-gainaspgaas
The luminescence properties of In1−xGaxAsyP1−y layers and heterostructures grown lattice matched to GaAs by metalorganic vapour-phase epitaxy (MOVPE) were studied and correlated to the crystalline pro
Gain spectra measurement by a variable stripe length method with current injection
/en/research/publications/gain-spectra-measurement-by-a-variable-stripe-length-method-with-current-injection
A new method for determining gain spectra is presented. The amplified spontanous emission is measured and spectrally resolved in both TE and TM polarisations; it is dependent on the current injected
Characterization of InxGa1-xAs single quantum wells, buried in GaAs[001], by grazing incidence diffraction
/en/research/publications/characterization-of-inxga1-xas-single-quantum-wells-buried-in-gaas9100193-by-grazing-incidence-diffraction
The depth profile of the chemical composition in InxGa1-xAs single quantum wells (SQWs), epitaxially grown onto a GaAs[001] substrate and covered by a GaAs cap layer, has been determined by us
Evaluation of strained InGaAs/GaAs quantum wells by atomic force microscopy
/en/research/publications/evaluation-of-strained-ingaasgaas-quantum-wells-by-atomic-force-microscopy
Atomic force microscopy (AFM) is adopted for evaluation of strained InGaAs/GaAs quantum well structures grown by metalorganic vapor phase epitaxy. InAs-rich clusters are formed at the upper interface
Comparison of Ti/Pt/Au and Ti/Ru/Au contact systems to p-type InGaP
/en/research/publications/comparison-of-tiptau-and-tiruau-contact-systems-to-p-type-ingap
The electrical and metallurgical properties of vacuum-evaporated Ti/Pt/Au and Ti/Ru/Au contacts to moderately doped p-type InGaP (p ∼ 3 × 1018 cm−3) and their therma
Structure and stability studies on W, WSi, WSiN/GaAs systems by XRD
/en/research/publications/structure-and-stability-studies-on-w-wsi-wsingaas-systems-by-xrd
The microstructural properties of tungsten, tungsten silicide and tungsten silicide nitride layers on GaAs were studied by thin film x-ray diffraction and correlated with deposition parameters, target
Low resistance (~1x10-6 cm-2) Au/Ge/Pd ohmic contact to n-Al0.5In0.5P
/en/research/publications/low-resistance-1x10-6-cm-2-augepd-ohmic-contact-to-n-al05in05p
A Au (1000 Å)/Ge (100 Å)/Pd (100 Å) contact scheme has been investigated to form low resistance Ohmic contact to n-Al0.5In0.5P (E g =2.3 eV) with a minimum contact resistivity of about
Modelling of edges and corners in the alternating transmission line matrix (ATLM) scheme
/en/research/publications/modelling-of-edges-and-corners-in-the-alternating-transmission-line-matrix-atlm-scheme
An improved scattering matrix for modelling edge and corner nodes with the alternating transmission line matrix (ATLM) method is presented. ATLM simulations with new edge and corner nodes show much gr
Optimum Mesh Grading for Finite-Difference Method
/en/research/publications/optimum-mesh-grading-for-finite-difference-method
The coarseness error of the finite-difference (FD) method is studied analyzing a typical planar waveguide and a rectangular coaxial geometry. Results for equidistant and graded mesh are compared in te
Three-Dimensional Full-Vector Analysis of Optical Waveguides by Finite-Integration Beam-Propagation Method (FIBPM)
/en/research/publications/three-dimensional-full-vector-analysis-of-optical-waveguides-by-finite-integration-beam-propagation-method-fibpm
In the paper a novel finite-integration beam-propagation method (FIBPM) is presented. This method is especially suited for the simulation of optical waveguides containing extremely thin layers of comp