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Spectral components, initial improvement and degradation of 265 nm UV-C LEDs
/en/research/publications/spectral-components-initial-improvement-and-degradation-of-265-nm-uv-c-leds
Spectral components, initial improvement and degradation of 265 nm UV-C LEDs C. De Santia, F. Pivaa, M. Buffoloa,b, N. Roccatoa, M. Pilatia, S. Longatoa,…
Thermal Lens Manipulation Using Edge-Heaters in Laser Bars for Improved Efficiency and Divergence
/en/research/publications/thermal-lens-manipulation-using-edge-heaters-in-laser-bars-for-improved-effciency-and-divergence
We present here an approach to flattening the lateral thermal lens that develops in kW-class semiconductor laser bars consisting of multiple broad-area emitters and is responsible for limiting the…
Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs
/en/research/publications/modeling-the-capacitance-voltage-characteristics-of-algan-based-uv-c-leds
We propose a detailed approach for modeling the C–V characteristic of complex heterostructurebased devices, investigating the case of UV-C LEDs. The study is based on combined experimental…
Attosecond-Jitter Ambitions and Market Realities: From Lab Breakthroughs to Commercial Frontiers
/en/events/ottosecond-jitter-ambitions-and-market-realities-from-lab-breakthroughs-to-commercial-frontiers
Dr. Peter Hertenstein, QuSineDr. Meysam Bahmanian, Universität Paderborn
Editorial
/en/research/publications/editorial
After initial proof-of-concept demonstrations, power- and efficiency-scaling are a central goal of semiconductor laser development, for broad societal benefits, reducing energy consumption and…
Laser World of Photonics & Cleo Europe 2025
/en/events/laser-world-of-photonics-cleo-europe-2025
FBH will be presenting its full range of capabilities and services at this year's Laser World of Photonics - we look forward to seeing you at the joint Berlin-Brandenburg booth, hall A2.117. In…
Defects and reliability of UVC-LEDs
/en/research/publications/defects-and-reliability-of-uvc-leds
Defects and reliability of UVC-LEDs M. Buffolo1, F. Piva1, N. Roccato1, C. De Santi1, T. Wernicke2, J. Höpfner2, M. Schilling2, A. Muhin2,…
Light Extraction and External Quantum Efficiency of 235 nm Far–Ultraviolet-C Light-Emitting Diodes on Single-Crystal AlN Substrates
/en/research/publications/light-extraction-and-external-quantum-efficiency-of-235nm-far-ultraviolet-c-light-emitting-diodes-on-single-crystal-aln-substrates
The effect of bulk AlN single-crystal substrate thickness on the light extraction efficiency and external quantum efficiency of far ultraviolet-C light emitting diodes (far-UVC LEDs) has been…
Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps-Induced Drain Lag
/en/research/publications/importance-of-scaling-in-rf-gan-hemts-for-reduction-of-surface-traps-induced-drain-lag
Drain lag is a well-known phenomenon that leads to radio frequency performance degradation in AlGaN/GaN high-electron-mobility transistors. Herein, it is demonstrated that a reduction of the…
Time-Resolved Investigations of the Capacitive to Inductive Transition in a Microwave-Driven Plasma Source
/en/research/publications/time-resolved-investigations-of-the-capacitive-to-inductive-transition-in-a-microwave-driven-plasma-source
Measurement of resonances requires data acquisition at different frequencies. Tracing the evolution of a resonance, therefore, requires a long time for each step. Reproducible events allow us to…