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Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors
/en/research/publications/correlating-interface-and-border-traps-with-distinctive-features-of-c-v-curves-in-vertical-al2o3gan-mos-capacitors
In this article, we present an analysis of the correlation between interface traps (ITs) and border traps (BTs) on distinctive features of C–V curves in vertical Al2O3/gallium-nitride (GaN) MOS capaci
Advanced in-situ etch depth control for dry etching processes – to achieve optimum device perfor-mance
/en/research/research-news/advanced-in-situ-etch-depth-control-for-dry-etching-processes-to-achieve-optimum-device-perfor-mance
Sophisticated etch processes are required to fabricate high-power diode lasers with excellent performance. We explain exemplarily how to control the etch depth in-situ and why the measuring wavelength
Process optimisation of MOVPE growth by numerical modelling of transport phenomena including thermal radiation
/en/research/publications/process-optimisation-of-movpe-growth-by-numerical-modelling-of-transport-phenomena-including-thermal-radiation
A global transport model for the MOVPE of III–V growth based on the finite volume solution of coupled flow, heat and mass transfer, including detailed radiative transfer, multicomponent diffusion and
The effective frequency method in the analysis of vertical-cavity surface-emitting lasers
/en/research/publications/the-effective-frequency-method-in-the-analysis-of-vertical-cavity-surface-emitting-lasers
An effective index model for vertical-cavity surface-emitting lasers (VCSEL's) is reexamined. In a systematic manner, the basic equations are derived. Instead of effective indices of plane reference w
Guest Editorial Special Issue on Globalization in Photonics
/en/research/publications/guest-editorial-special-issue-on-globalization-in-photonics
We highlight in this special issue some of the excellent work and advances in photonics which are taking place world-wide. The papers also emphasize how the photonics field in general and the engineer
apc|m conference
/en/events/22nd-european-advanced-process-control-and-manufacturing-conference-2024
22nd European Advanced Process Control and Manufacturing (apc|m) Conference
Properties and fabrication of high-order Bragg gratings for wavelength stabilization of diode lasers
/en/research/publications/properties-and-fabrication-of-high-order-bragg-gratings-for-wavelength-stabilization-of-diode-lasers
We report further progress in the design and fabrication of high-order Bragg gratings defined by I-line projection lithography that are implemented in a high-power diode laser. Simulations of surface
MOVPE growth of GaInP/GaAs hetero-bipolar-transistors using CBr4 as carbon dopant source
/en/research/publications/movpe-growth-of-gainpgaas-hetero-bipolar-transistors-using-cbr4-as-carbon-dopant-source
Carbon doping of GaAs with carbon tetrabromide (CBr4) in low pressure MOVPE has been investigated and applied to the fabrication of HBTs. Especially the hydrogen incorporation and the associated accep
Growth monitoring by reflectance anisotropy spectroscopy in MOVPE reactors for device fabrication
/en/research/publications/growth-monitoring-by-reflectance-anisotropy-spectroscopy-in-movpe-reactors-for-device-fabrication
Reflectance anisotropy spectroscopy (RAS) has proved its capability to study surface processes during metalorganic vapour phase epitaxy (MOVPE) growth of a variety of III–V compounds. However, these i
Identification of a buried single quantum well within surface structured semiconductors using depth resolved x-ray grazing incidence diffraction
/en/research/publications/identification-of-a-buried-single-quantum-well-within-surface-structured-semiconductors-using-depth-resolved-x-ray-grazing-incidence-diffraction
A free standing surface wire nanostructure defined on GaAs[001] containing a 5 nm thick GaInAs single quantum well (SQW) was analysed, recording reciprocal space maps by coplanar high-resolution x-ray