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Modeling of the gate leakage in MOSFETs with Al2O3/β-Ga2O3 gate stack
/en/research/publications/modeling-of-the-gate-leakage-in-mosfets-with-al2o3beta-ga2o3-gate-stack
Modeling of the gate leakage in MOSFETs with Al2O3/β-Ga2O3 gate stack C. De Santia, M. Fregolenta, E. Brusaterraa,b, K. Tetznerb, J. Würflb, M. Buffoloa, G.&nb
Ultra-wide-aperture diode lasers with high brightness through use of buried periodic current structuring
/en/research/publications/ultra-wide-aperture-diode-lasers-with-high-brightness-through-use-of-buried-periodic-current-structuring
Ultra-wide-aperture diode lasers with high brightness through use of buried periodic current structuring B. King, S. Arslan, P. Della Casa, D. Martin, A. Boni, P.S.
High brightness pumps for fiber lasers based on monolithically grating stabilized diode lasers
/en/research/publications/high-brightness-pumps-for-fiber-lasers-based-on-monolithically-grating-stabilized-diode-lasers
High brightness pumps for fiber lasers based on monolithically grating stabilized diode lasers M. Wilkens, P.S. Basler, B. Eppich, J. Fricke, A. Ginolas, M. Hübner, P.&n
Distributed Bragg reflector tapered diode lasers emitting reliably more than 7 W at 1180 nm
/en/research/publications/distributed-bragg-reflector-tapered-diode-lasers-emitting-reliably-more-than-7-w-at-1180-nm
Distributed Bragg reflector tapered diode lasers emitting reliably more than 7 W at 1180 nm D. Feise, O. Senel, H. Wenzel, P. Della Casa, R.-St. Unger, J. Glaab, an
Hybrid semiconductor master-oscillator power-amplifiers with more than 5 W optical output power
/en/research/publications/hybrid-semiconductor-master-oscillator-power-amplifiers-with-more-than-5-w-optical-output-power
Hybrid semiconductor master-oscillator power-amplifiers with more than 5 W optical output power G. Blume, A. Müller, P. Hildenstein, N. Werner, A. Maaßdorf, D. Feise, S.
FBH publication among the top 10 % of downloads
/en/media-center/press-releases/fbh-paper-among-the-top-10-of-downloads
The publication “Au-Free Ohmic Contact for GaN High-Electron-Mobility Transistors” by Hossein Yazdani, Serguei Chevtchenko, Frank Brunner, Günther Tränkle, and Joachim Würfl stands out as one of the m
New pioneering Leibniz Lab to combat pandemics: Pandemic Preparedness
/en/media-center/press-releases/new-pioneering-leibniz-lab-to-combat-pandemics
The Leibniz Lab Pandemic Preparedness: One Health, One Future connects excellent inter- and transdisciplinary research. FBH contributes its expertise in the development of innovative UV light-emitting
Miniaturizing a coherent beam combining system into a compact laser diode module
/en/research/publications/miniaturizing-a-coherent-beam-combining-system-into-a-compact-laser-diode-module
We present a laser module with dimensions of 76×43×15mm3 that for the first time to our knowledge realizes a coherent beam combination in such a compact device, using two tapered amplifiers seeded by
Targeting 6G applications in the sub-THz range – advanced InP bipolar transistor process
/en/research/research-news/targeting-6g-applications-in-the-sub-thz-range-advanced-inp-bipolar-transistor-process
Joint research activities between University of Duisburg-Essen and FBH yield improved performance of InP-based technologies. These rely on optimized epitaxial material and novel process techniques. Le
Multi-wavelength UV-LED module for gas sensing
/en/research/photonics/chips-laser-leds/uv-leds/multi-wavelength-uv-led-module-for-gas-sensing
The demand for light-emitting diodes (LEDs) in the ultraviolet-C (UVC) spectral range below 255 nm is currently increasing. They can be used to disinfect surfaces as well as liquids and air. Sk