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K/Ka-Band–GaN–High-Electron-Mobility Transistors Technology with 700 mS mm-1 Extrinsic Transconductance
/en/research/publications/kka-band-gan-high-electron-mobility-transistors-technology-with-700-ms-mm-1-extrinsic-transconductance
In this study, the impacts of fabrication technology and epitaxial layer design on the transconductance (gm) of radio frequency AlGaN/GaN high-electron-mobility transistors (HEMTs) are examined.…
Contact
/en/contact
Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik Gustav-Kirchhoff-Str. 4 12489 Berlin Phone +49 30 63922600 Fax +49 30 63922602 Email fbh@fbh-berlin.de How to find…
How to find us
/en/contact/how-to-find-us
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik Gustav-Kirchhoff-Str. 4 12489 Berlin, Germany By aircraft – from BER Airport Bus 164 (direction S Köpenick) to…
Dissertations
/en/publications/dissertations
Anisuzzaman Boni Efficiency optimization of high power broad-area lasers and investigation of their power saturation mechanisms Zugl.: Dissertation Technische Universität Berlin, 2024. …
Solid-Solution Limits and Thorough Characterization of Bulk β-(AlxGa1-x)2O Single Crystals Grown by the Czochralski Method
/en/research/publications/solid-solution-limits-and-thorough-characterization-of-bulk-beta-alxga1-x2o-single-crystals-grown-by-the-czochralski-method
With comprehensive crystal growth experiments of β-(AlxGa1-x)2O3 by the Czochralski method this work concludes a maximum [Al] = 40 mol% (35 mol% in the melt) that can be…
AlGaN/AlN heterostructures: an emerging platform for integrated photonics
/en/research/publications/alganaln-heterostructures-an-emerging-platform-for-integrated-photonics
We introduce a novel material for integrated photonics and investigate aluminum gallium nitride (AlGaN) on aluminum nitride (AlN) templates as a platform for developing reconfigurable and on-chip…
Towards an EPR on a Chip Spectrometer for Monitoring Radiation Damage During X‑ray Absorption Spectroscopy
/en/research/publications/towards-an-epr-on-a-chip-spectrometer-for-monitoring-radiation-damage-during-x-ray-absorption-spectroscopy
Electron paramagnetic resonance (EPR) spectroscopy is an essential tool to investigate the effects of ionizing radiation, which is routinely administered for reducing contaminations and waste in food…
Characteristics and Operation of a Monolithic Bidirectional GaN-on-AlN/SiC Power Transistor Employing Dual-Gate
/en/research/publications/characteristics-and-operation-of-a-monolithic-bidirectional-gan-on-alnsic-power-transistor-employing-dual-gate
We demonstrate a novel 650 V/110 mΩ monolithic bidirectional GaN-on-AlN/SiC switch with two Schottky-type gates, which shows back-gating immunity and thus enables straightforward on-chip…
Novel design for all-semiconductor PCSEL with very high power in a narrow beam
/en/research/research-news/novel-design-for-all-semiconductor-pcsel-with-very-high-power-in-a-narrow-beam
We have proposed a new design for a photonic crystal surface emitting laser diode (PCSEL). Our approach enables high-efficiency generation of multi-Watt optical power in a narrow circular…
Working in Photonics 2025
/en/events/working-in-photonics-2025
FBH is once again taking part in the OpTecBB career event this year.