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Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs
/en/research/publications/modeling-the-capacitance-voltage-characteristics-of-algan-based-uv-c-leds
We propose a detailed approach for modeling the C–V characteristic of complex heterostructurebased devices, investigating the case of UV-C LEDs. The study is based on combined experimental…
Editorial
/en/research/publications/editorial
After initial proof-of-concept demonstrations, power- and efficiency-scaling are a central goal of semiconductor laser development, for broad societal benefits, reducing energy consumption and…
Defects and reliability of UVC-LEDs
/en/research/publications/defects-and-reliability-of-uvc-leds
Defects and reliability of UVC-LEDs M. Buffolo1, F. Piva1, N. Roccato1, C. De Santi1, T. Wernicke2, J. Höpfner2, M. Schilling2, A. Muhin2,…
Light Extraction and External Quantum Efficiency of 235 nm Far–Ultraviolet-C Light-Emitting Diodes on Single-Crystal AlN Substrates
/en/research/publications/light-extraction-and-external-quantum-efficiency-of-235nm-far-ultraviolet-c-light-emitting-diodes-on-single-crystal-aln-substrates
The effect of bulk AlN single-crystal substrate thickness on the light extraction efficiency and external quantum efficiency of far ultraviolet-C light emitting diodes (far-UVC LEDs) has been…
Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps-Induced Drain Lag
/en/research/publications/importance-of-scaling-in-rf-gan-hemts-for-reduction-of-surface-traps-induced-drain-lag
Drain lag is a well-known phenomenon that leads to radio frequency performance degradation in AlGaN/GaN high-electron-mobility transistors. Herein, it is demonstrated that a reduction of the…
Time-Resolved Investigations of the Capacitive to Inductive Transition in a Microwave-Driven Plasma Source
/en/research/publications/time-resolved-investigations-of-the-capacitive-to-inductive-transition-in-a-microwave-driven-plasma-source
Measurement of resonances requires data acquisition at different frequencies. Tracing the evolution of a resonance, therefore, requires a long time for each step. Reproducible events allow us to…
Combining Bayesian Optimization, Singular Value Decomposition, and Machine Learning for Advanced Optical Design
/en/research/publications/combining-bayesian-optimization-singular-value-decomposition-and-machine-learning-for-advanced-optical-design
The design and optimization of optical components, such as Bragg gratings, are critical for applications in telecommunications, sensing, and photonic circuits. To overcome the limitations of…
Research Fab Microelectronics Germany (FMD)
/en/cooperations/research-fab-microelectronics-germany
To reinforce the position of Europe’s semiconductor and electronics industry within global competition, eleven institutes within the Fraunhofer Group for Microelectronics together with the…
Vertical GaN on tungsten high-voltage pn-diodes – advancing cost-effective power electronics
/en/research/research-news/vertical-gan-on-tungsten-high-voltage-pn-diodes-advancing-cost-effective-power-electronics
Efficient power electronic converters need high blocking strength and low on-state resistance. We demonstrate successful laser lift off based transfer of vertical GaN pn-diodes from sapphire to…
Terrestrial Very-Long-Baseline Atom Interferometry: summary of the second workshop
/en/research/publications/terrestrial-very-long-baseline-atom-interferometry-summary-of-the-second-workshop
This summary of the second Terrestrial Very-Long-Baseline Atom Interferometry (TVLBAI) Workshop provides a comprehensive overview of our meeting held in London in April 2024 (Second Terrestrial…