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A coplanar 38-GHz SiGe MMIC oscillator
/en/research/publications/a-coplanar-38-ghz-sige-mmic-oscillator
Design, technology, and first results of a coplanar Si-SiGe HBT oscillator monolithically integrated on high-resistivity silicon are reported. At 38 GHz, an oscillator output power of 2 dBm with a con
High-impedance coplanar waveguides with low attenuation
/en/research/publications/high-impedance-coplanar-waveguides-with-low-attenuation
The conventional MMIC coplanar line covers an impedance range from about 30-80 Ω. Values outside this range cannot be fabricated reliably or cause excessive losses, For several applications, however,
Simple method for examining sulphur passivation of facets in InGaAs–AlGaAs (λ=0.98µm) laser diodes
/en/research/publications/simple-method-for-examining-sulphur-passivation-of-facets-in-ingaas-algaas-l098um-laser-diodes
The effect of (NH4)2Sx treatment of the facet of InGaAs/AlGaAs ridge waveguide (RW) laser diodes on the nonradiative current and catastrophic optical damage (COD) level is reported. Using the power–vo
Stability of sulfur-passivated facets of InGaAs-AlGaAs laser diodes
/en/research/publications/stability-of-sulfur-passivated-facets-of-ingaas-algaas-laser-diodes
The facets of GaAs-AlGaAs ridge waveguide (RW) laser diodes were passivated using (NH4)2Sz. The effectiveness of this procedure was checked by electroluminescence power-voltage-current (P-V-Z) measure
High-power diode lasers based on InGaAsP spacer and waveguide layers with AlGaAs cladding layers
/en/research/publications/high-power-diode-lasers-based-on-ingaasp-spacer-and-waveguide-layers-with-algaas-cladding-layers
High-power diode lasers based on InGaAsP spacer and waveguide layers with AlGaAs cladding layers G. Erbert, F. Bugge, A. Knauer, J. Sebastian, K. Vogel, M. Weyers Ferdi
Application of a Two-Dimensional Direction Dependent Sub-µm-Offset Sensor
/en/research/publications/application-of-a-two-dimensional-direction-dependent-sub-um-offset-sensor
Application of a Two-Dimensional Direction Dependent Sub-µm-Offset Sensor R. Güther, R. Staske, M. Becker Ferdinand-Braun-Institut für Höchstfrequenztechnik, Germany
Spectral properties of a system describing fast pulsating DFB lasers
/en/research/publications/spectral-properties-of-a-system-describing-fast-pulsating-dfb-lasers
A model describing self pulsating distributed feedback semiconductor lasers is investigated with mathematical rigour. Qualitative statements on its spectral properties are proved.
Mechanisms of fast self pulsations in two-section DFB lasers
/en/research/publications/mechanisms-of-fast-self-pulsations-in-two-section-dfb-lasers
We show theoretically, that the detuning between the resonance frequencies of differently pumped DFB sections gives rise to two different pulsation mechanisms, 1) dispersive self Q-switching of a sing
Simulation of single-mode high-power semiconductor lasers
/en/research/publications/simulation-of-single-mode-high-power-lasers
Simulation of single-mode high-power semiconductor lasers H. Wenzel, G. Erbert Ferdinand-Braun-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
Effect of growth temperature on performance of AlGaAs/InGaAs/GaAs QW laser diodes
/en/research/publications/effect-of-growth-temperature-on-performance-of-algaasingaasgaas-qw-laser-diodes
Growth and characterization results are presented for high-power laser diodes with AlGaAs cladding and waveguide layers and strained In1-xGaxAs quantum wells with 0.09 < x < 0.25 grown by metalorganic