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Advancing high-frequency communication: Scaled InP HBT transistors with fmax> 500 GHz
/en/research/research-news/advancing-high-frequency-communication-scaled-inp-hbt-transistors-with-fmax-500-ghz
We have developed a highly scalable 400 nm InP HBT process with fmax> 500 GHz. The technology offers precise control, consistent performance, and improved efficiency, contributing to…
Hasselt Diamond Workshop - SBDD
/en/events/hasselt-diamond-workshop-sbdd
FBH will present latest research results at the Hasselt Diamond Workshop - SBDD.
Diode Laser-Based Generation of Mode-Locked Pulses at 1067 Nm (290 fs, 69 W Peak Power)
/en/research/publications/diode-laser-based-generation-of-mode-locked-pulses-at-1067-nm-290-fs-69-w-peak-power
We demonstrate the diode laser-based generation of mode-locked pulses with 290 fs temporal width and 69 W peak power at a centre wavelength of 1067 nm. The laser diode is operated in…
Coherent Microwave, Optical, and Mechanical Quantum Control of Spin Qubits in Diamond
/en/research/publications/coherent-microwave-optical-and-mechanical-quantum-control-of-spin-qubits-in-diamond
Diamond has emerged as a highly promising platform for quantum network applications. Color centers in diamond fulfill the fundamental requirements for quantum nodes: they constitute optically…
All-implanted lateral β-Ga2O3 MOSFET devices realized on semi-insulating (-201) β-Ga2O3 substrates
/en/research/publications/all-implanted-lateral-beta-ga2o3-mosfet-devices-realized-on-semi-insulating-201-beta-ga2o3-substrates
In this work, we report on the fabrication of all-implanted b-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) devices on semi-insulating (-201) β-Ga2O3 substrates. Through the use of…
Spatio-temporal modeling and simulation of a mode-locked tapered semiconductor diode laser
/en/research/publications/spatio-temporal-modeling-and-simulation-of-a-mode-locked-tapered-semiconductor-diode-laser
We present a theoretical model and numerical simulation results of the dynamics of a monolithic edge-emitting mode-locked tapered quantum well laser. The comprehensive simulation employs a (2+1)…
Theory of the Linewidth–Power Product of Photonic–Crystal Surface–Emitting Lasers
/en/research/publications/theory-of-the-linewidth-power-product-of-photonic-crystal-surface-emitting-lasers
A general theory for the intrinsic (Lorentzian) linewidth of photonic–crystal surface–emitting lasers (PCSELs) is presented. The effect of spontaneous emission is modeled by a classical Langevin…
Nonlinear beam conversion with multi-spectral components
/en/research/publications/nonlinear-beam-conversion-with-multi-spectral-components
We characterized the intra-cavity mode patterns due to the concurrence of dual-optical parametric oscillations (OPOs) followed by second-harmonic generation (SHG) and sumfrequency generation (SFG)…
Epitaxy of >7 μm Thick GaN Drift Layers on 150 mm Si(111) Substrates Realizing Vertical PN Diodes with 1200 V Breakdown Voltage
/en/research/publications/epitaxy-of-7-mm-thick-gan-drift-layers-on-150-mm-si111-substrates-realizing-vertical-pn-diodes-with-1200-v-breakdown-voltage
Metal-organic chemical vapor deposition growth of vertical GaN PN structures on 6" Si(111) substrates enabling a 1200 V breakdown voltage is demonstrated. Thanks to an optimized buffer structure…
The influence of experimental imperfections on photonic GHZ state generation
/en/research/publications/the-influence-of-experimental-imperfections-on-photonic-ghz-state-generation
While the advantages of photonic quantum computing, including direct compatibility with communication, are apparent, several imperfections such as loss and distinguishability presently limit actual…