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Planar refractive index patterning through microcontact photo-thermal annealing of a printable organic/inorganic hybrid material
/en/research/publications/planar-refractive-index-patterning-through-microcontact-photo-thermal-annealing-of-a-printable-organicinorganic-hybrid-material-1
We demonstrate proof-of-concept refractive-index structures with large refractive-index-gradient profiles, using a micro-contact photothermal annealing (µCPA) process to pattern…
Internally wavelength stabilized 910 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions
/en/research/publications/internally-wavelength-stabilized-910-nm-diode-lasers-with-epitaxially-stacked-multiple-active-regions-and-tunnel-junctions-1
We present a multi-active-region bipolar-cascade distributed-Bragg reflector (DBR) laser emitting around 910 nm. The three active regions and two tunnel junctions are located in a single…
Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers
/en/research/publications/impact-of-si-doping-on-dislocation-behavior-in-movpe-grown-aln-on-high-temperature-annealed-aln-buffer-layers
In this work, we compare the defect structure in unintentionally doped and Si-doped AlN layers grown by metalorganic vapor phase epitaxy (MOVPE) on high-temperature annealed (HTA) sputtered AlN…
Application of 233 nm far-UVC LEDs for eradication of MRSA and MSSA and risk assessment on skin models
/en/research/publications/application-of-233-nm-far-uvc-leds-for-eradication-of-mrsa-and-mssa-and-risk-assessment-on-skin-models
A newly developed UVC LED source with an emission wavelength of 233 nm was proved on bactericidal efficacy and skin tolerability. The bactericidal efficacy was qualitatively analysed using blood…
Growth of compressively strained GaxIn1−xAsyP1−y quantum wells for 690–730 nm laser emission
/en/research/publications/growth-of-compressively-strained-gaxin1xasyp1y-quantum-wells-for-690-730-nm-laser-emission-1
AlxGa1−xAs-based lasers are typically used for emission wavelengths of 730 nm and above, e.g. using GaAsyP1−y quantum wells (QW), while lasers emitting below 700 nm rely on…
Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates
/en/research/publications/strain-induced-power-enhancement-of-far-uvc-leds-on-high-temperature-annealed-aln-templates-1
High temperature annealed AlN/sapphire templates exhibit a reduced in-plane lattice constant compared to conventional non-annealed AlN/sapphire grown by metalorganic vapor phase epitaxy (MOVPE). This…
Influence of vacuum chamber port terminations on beam coupling impedances
/en/research/publications/influence-of-vacuum-chamber-port-terminations-on-beam-coupling-impedances-1
Vacuum chambers of particle accelerators are typically equipped with radio-frequency couplers. The couplers are employed to excite modes for particle acceleration, to extract the energy of…
Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN
/en/research/publications/effects-of-post-metallization-annealing-on-al2o3-atomic-layer-deposition-on-n-gan-1
The chemical, physical and electrical properties and the robustness of post metallization annealed Al2O3 atomic layers deposited on n-type GaN are investigated in this work. Planar metal insulator…
Increased Light Extraction of Thin-Film Flip-Chip UVB LEDs by Surface Texturing
/en/research/publications/increased-light-extraction-of-thin-film-flip-chip-uvb-leds-by-surface-texturing
Ultraviolet light-emitting diodes (LEDs) suffer from a low wall-plug efficiency, which is to a large extent limited by the poor light extraction efficiency (LEE). A thin-film flip-chip (TFFC) design…
Suppression of particle formation by gas- phase pre-reactions in (100) MOVPE-grown β- Ga2O3 films for vertical device application
/en/research/publications/suppression-of-particle-formation-by-gas-phase-pre-reactions-in-100-movpe-grown-b-ga2o3-films-for-vertical-device-application
This work investigated the metalorganic vapor-phase epitaxy (MOVPE) of (100) β-Ga2O3 films with the aim of meeting the requirements to act as drift layers for high-power electronic devices. A…