Search
Rules for the search
- Only words with 2 or more characters are accepted
- Max 200 chars total
- Space is used to split words, "" can be used to search for a whole string (not indexed search then)
- AND, OR and NOT are prefix words, overruling the default operator
- +/|/- equals AND, OR and NOT as operators.
- All search words are converted to lowercase
Data-Efficient Machine Learning Algorithms for the Design of Surface Bragg Gratings
/en/research/publications/data-efficient-machine-learning-algorithms-for-the-design-of-surface-bragg-gratings
Deep learning models, with a prerequisite of large databases, are common approaches in applying machine learning for inverse design in photonics. For these models, less expensive, approximate methods…
Silicon diffusion in AlN
/en/research/publications/silicon-diffusion-in-aln
In this study, we investigate the diffusion of Si donors in AlN. Amorphous Si1-xNx sputtered on the surface of bulk AlN with low dislocation density is used as a Si source. The diffusion experiments…
Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric
/en/research/publications/gate-leakage-modeling-in-lateral-b-ga2o3-mosfets-with-al2o3-gate-dielectric
We present a detailed model of the static and dynamic gate leakage current in lateral β-Ga2O3 MOSFETs with an Al2O3 gate insulator, covering a wide temperature range. We demonstrate that (i) in the…
Towards tunable graphene phononic crystals
/en/research/publications/towards-tunable-graphene-phononic-crystals
Phononic crystals (PnCs) are artificially patterned media exhibiting bands of allowed and forbidden zones for phonons — in analogy to the electronic band structure of crystalline solids arising from…
A Dual-Species Atom Interferometer Payload for Operation on Sounding Rockets
/en/research/publications/a-dual-species-atom-interferometer-payload-for-operation-on-sounding-rockets
We report on the design and the construction of a sounding rocket payload capable of performing atom interferometry with Bose-Einstein condensates of 41K and 87Rb. The apparatus is designed to be…
Skin optical properties from 200 to 300 nm support far UV-C skin-safety in vivo
/en/research/publications/skin-optical-properties-from-200-to-300-nm-support-far-uv-c-skin-safety-in-vivo
The growing threat of multi-drug resistant pathogens and airborne microbial diseases has highlighted the need to improve or develop novel disinfection methods for clinical environments. Conventional…
The role of gate leakage on surface-related current collapse in AlGaN/GaN HEMTs
/en/research/publications/the-role-of-gate-leakage-on-surface-related-current-collapse-in-algangan-hemts
The parasitic gate tunnelling of electrons into surface traps is shown to be responsible for the current collapse in GaN high electron mobility transistors. Simulations with and without surface traps…
Design and Analysis of a 50 GHz InP DHBT Class-E Power Amplifier Providing 2.3 mW/µm2
/en/research/publications/design-and-analysis-of-a-50-ghz-inp-dhbt-class-e-power-amplifier-providing-23-mwmicrom2
For the commercial success of mm-wave 5G technologies, there is a need for high-output power and efficient power amplifier systems. In this paper, we demonstrate the capability of InP DHBT devices at…
A Full G-band Power Amplifier with 34% Peak PAE in InP-DHBT Technology
/en/research/publications/a-full-g-band-power-amplifier-with-34-peak-pae-in-inp-dhbt-technology
This paper presents a highly efficient full G-band power amplifier (PA) using 500 nm InP-DHBT technology. It consists of 3 stages using a cascade unit power cell. Measurements show in average…
Heterointegration of mm-Wave InP-HBT Power Amplifier Chiplets on SiGe-BiCMOS Chip
/en/research/publications/heterointegration-of-mm-wave-inp-hbt-power-amplifier-chiplets-on-sige-bicmos-chip
In this paper we demonstrate InP chiplet heterointegration on SiGe-BiCMOS carriers for mm-wave applications. A flip-chip type of assembly with indium-based microbumps allows for seamless integration…