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First W-Band InP DHBT Digital Power Amplifier
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Emerging applications for high-speed communication or radar systems are driving the need for W-band power amplifiers (PA). Recently, the FBH for the first time developed a high-efficiency W-band…
Diode laser based deep ultraviolet Raman excitation
/en/research/research-news/diode-laser-based-deep-ultraviolet-raman-excitation
One of the biggest challenges in Raman spectroscopy is to avoid or minimize the typically strong fluorescence background that can, in some cases, even mask the relatively weak Raman signal.
Highly Efficient High-Power G-band Frequency Multiplier in Transferred-Substrate InP DHBT Technology
/en/research/research-news/highly-efficient-high-power-g-band-frequency-multiplier-in-transferred-substrate-inp-dhbt-technology
The frequency range between 100 GHz and 1 THz offers large bandwidth for high-speed communications as well as improved spatial resolution for radar sensors and imaging systems due to the short…
Wafer-level hetero-integrated InP DHBT/SiGe BiCMOS technology for mm-wave and sub-THz applications
/en/research/research-news/wafer-level-hetero-integrated-inp-dhbtsige-bicmos-technology-for-mm-wave-and-sub-thz-applications
The mm-wave and sub-THz region from 100 to beyond 500 GHz holds many promises for emerging applications such as ultra-wideband wireless communications, high-resolution radar, spectroscopic sensing...
Can Class-G supply modulated systems replace power amplifiers in single-input, single-output systems?
/en/research/research-news/can-class-g-supply-modulated-systems-replace-power-amplifiers-in-single-input-single-output-systems
Microwave power amplifiers (PA) are core components in modern communication systems. We present a first step towards a solution to replace linear PAs with highly efficient class-G supply modulated…
New method for in-depth characterization of GaAs-based electro-optic phase modulators
/en/research/research-news/new-method-for-in-depth-characterization-of-gaas-based-electro-optic-phase-modulators
Chip-based modulators provide the means to micro-integrate phase control and modulation into hybrid laser and spectroscopy modules in a very compact and robust way. We have developed and successfully…
High temperature operation test stability of Ka-band transistors with different Al content in AlGaN layer
/en/research/research-news/high-temperature-operation-test-stability-of-ka-band-transistors-with-different-al-content-in-algan-layer
To optimize the AlGaN/GaN epitaxial structure for short channel transistors, epitaxial stacks with varying Al content of the AlGaN layer were investigated by utilizing FBH's Ka-band GaN process line.
Weiterbildung sichert Fachkräfte in Hightech-Unternehmen
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Ergebnisse des AlFaClu-Projektes wurden auf der micro photonics 2016 vorgestellt und mit Vertreterinnen und Vertretern aus Wirtschaft, Wissenschaft und Politik diskutiert
Jetzt bewerben! OpTecBB Summer School
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Für die Summer School "Intelligente Sensorsysteme für autonomes Fahren" im September läuft die Bewerbungsfrist
Narrow-band single mode emission of blue-violet lasers based on GaN
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GaN-based laser diodes emitting in the blue-violet spectral region are promising light sources for spectroscopy and atomic clocks. FBH successfully realized a stable narrow-band emission with DBR and…