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Highly Robust GaN Power Amplifier at Millimeter-Wave Frequencies Using Sputtered Iridium Gate MMIC Technology
/en/research/publications/highly-robust-gan-power-amplifier-at-millimeter-wave-frequencies-using-sputtered-iridium-gate-mmic-technology
This article presents the application of FBH’s sputtered Iridium (Ir) gate technology for the design and realization of a highly robust power amplifier (PA) intended for satellite communication…
Thermal lens engineering for high brightness edge emitters
/en/research/publications/thermal-lens-engineering-for-high-brightness-edge-emitters
We review approaches for the manipulation (flattening) of thermal profiles within broad-area-lasers for improved efficiency and brightness, illustrated with 1-cm wide, kW-class, 9xx-nm bars.…
Comparison of the static characteristics of GaN HEMTs with different gate technologies and the impact on modeling
/en/research/publications/comparison-of-the-static-characteristics-of-gan-hemts-with-different-gate-technologies-and-the-impact-on-modeling
This paper comprehensively studies the impact of different gate technologies on the static characteristics of GaN-HEMTs by comparing three transistors: 1) a GaN-on-SiC transistor fabricated by…
Irradiation of human oral mucosa by 233 nm far UV‑C LEDs for the safe inactivation of nosocomial pathogens
/en/research/publications/irradiation-of-human-oral-mucosa-by-233-nm-far-uv-c-leds-for-the-safe-inactivation-of-nosocomial-pathogens
The inactivation of multi resistant pathogens is an important clinical need. One approach is UV-C irradiation, which was previously not possible in vivo due to cytotoxicity. Recently, far UV-C…
Imaging Threading Dislocations and Surface Steps in Nitride Thin Films Using Electron Backscatter Diffraction
/en/research/publications/imaging-threading-dislocations-and-surface-steps-in-nitride-thin-films-using-electron-backscatter-diffraction
Extended defects, like threading dislocations, are detrimental to the performance of optoelectronic devices. In the scanning electron microscope, dislocations are traditionally imaged using diodes to…
Roadmap for focused ion beam technologies
/en/research/publications/roadmap-for-focused-ion-beam-technologies
The focused ion beam (FIB) is a powerful tool for fabrication, modification, and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for…
GaAs-based wide-aperture single emitters with 68 W output power at 69% efficiency realized using a periodic buried-regrown-implant-structure
/en/research/publications/gaas-based-wide-aperture-single-emitters-with-68-w-output-power-at-69-efficiency-realized-using-a-periodic-buried-regrown-implant-structure
Increased optical output power Popt from single broad area GaAs-based diode lasers is demanded for material processing, with higher Popt and cost reduction in €/W enabled by using devices with…
UV LED Irradiation Systems
/en/research/photonics/laser-uv-led-systems/uv-led-irradiation-systems
Complete value chain in-house epitaxial deposition of the semiconductor heterostructures on different MOVPE machines chip technology in the process line of the FBH clean room mounting of the…
Tunnel diode-based distributed feedback (DFB) broad-area diode lasers with excellent results for LiDAR applications
/en/research/research-news/tunnel-diode-based-distributed-feedback-dfb-broad-area-diode-lasers-with-excellent-results-for-lidar-applications
For the first time, FBH has developed wavelength-stabilized DFB broad-area lasers with multiple epitaxially stacked active regions and tunnel junctions. They are designed for emission around…
Distributed feedback broad area lasers with multiple epitaxially stacked active regions and tunnel junctions
/en/research/publications/distributed-feedback-broad-area-lasers-with-multiple-epitaxially-stacked-active-regions-and-tunnel-junctions
Distributed feedback (DFB) broad area (BA) lasers with multiple epitaxially stacked active regions and tunnel junctions designed for emission around 900 nm are investigated. DFB BA lasers with a…