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Technology for the Heterointegration of InP DHBT Chiplets on a SiGe BiCMOS Chip for mm-wave MMICs
/en/research/publications/technology-for-the-heterointegration-of-inp-dhbt-chiplets-on-a-sige-bicmos-chip-for-mm-wave-mmics
We present a low-temperature flip-chip-based mounting technology, enabling integration of indium phosphide (InP)-based chiplets on BiCMOS. The process temperatures of well below 200°C allow to…
Temperature dependence of the complex permittivity in microwave range of some industrial polymers
/en/research/publications/temperature-dependence-of-the-complex-permittivity-in-microwave-range-of-some-industrial-polymers
The microwave properties of a number of polymers common in industry are investigated. A cylindrical resonator in the TM012 mode is used. The cavity perturbation method and detailed COMSOL simulations…
Precise prediction of optical behaviour of mechanically stressed edge emitting GaAs devices
/en/research/publications/precise-prediction-of-optical-behaviour-of-mechanically-stressed-edge-emitting-gaas-devices
The presence of a thermally annealed metallization layer on top of a GaAs slab waveguide proofed to be of strong impact on the optical device behavior. Induced by the stress on the chip the…
A 3-D Printed Helix for Traveling-Wave Tubes
/en/research/publications/a-3-d-printed-helix-for-traveling-wave-tubes
In this work, a 3-D printed copper helix for a traveling-wave tube (TWT) is reported. The fabricated helix was designed to be used in a TWT operating at millimeter-wave frequencies (60-80 GHz).…
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs
/en/research/publications/isolation-properties-and-failure-mechanisms-of-vertical-pt-n-gan-sbds
This paper reports on the isolation properties and failure mechanism of n-type vertical Pt / n-GaN Schottky barrier diodes and the dependence on the drift layer doping concentration. The results…
Hybrid integrated mode-locked laser using a GaAs-based 1064 nm gain chip and a SiN external cavity
/en/research/publications/hybrid-integrated-mode-locked-laser-using-a-gaas-based-1064-nm-gain-chip-and-a-sin-external-cavity
External cavity mode-locked lasers could be used as comb sources for high volume application such as LIDAR and dual comb spectroscopy. Currently demonstrated chip scale integrated mode-locked lasers…
Distributed Bragg reflector lasers emitting between 696 and 712 nm
/en/research/publications/distributed-bragg-reflector-lasers-emitting-between-696-and-712-nm
The authors report on design, fabrication, and electro-optical characterization of single-frequency diode lasers emitting around 696, 707, and 712 nm. This has been achieved by a variation of…
Monolithically Integrated Extended Cavity Diode Laser with 32kHz 3dB Linewidth Emitting at 1064 nm
/en/research/publications/monolithically-integrated-extended-cavity-diode-laser-with-32khz-3db-linewidth-emitting-at-1064-nm
The spectral linewidth of semiconductor lasers is a crucial performance parameter in a growing number of applications. A common method to improve the coherence of the laser relies on increasing the…
2 kW Pulse Power from Internal Wavelength Stabilized Diode Laser Bar for LiDAR Applications
/en/research/publications/2-kw-pulse-power-from-internal-wavelength-stabilized-diode-laser-bar-for-lidar-applications
We present a bipolar-cascade distributed-Bragg-reflector laser bar with an intended wavelength of 905 nm emitting 8 ns long pulses with 2 kW peak power at a current slightly above…
High-brightness broad-area diode lasers with a novel enhanced self-aligned lateral structure
/en/research/publications/high-brightness-broad-area-diode-lasers-with-a-novel-enhanced-self-aligned-lateral-structure
We present broad-area lasers with enhanced self-aligned lateral structure (eSAS) using current-blocking layers optimized for tunnel current suppression, integrated within the p-AlGaAs cladding using…