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Extensive study of magneto-optical and optical properties of Cd1−xMnxTe between 675 and 1025 nm
/en/research/publications/extensive-study-of-magneto-optical-and-optical-properties-of-cd1xmnxte-between-675-and-1025-nm-1
We determine Faraday rotations and measure the optical reflection and transmission from magneto-optical Cd1−xMnxTe crystals with various stoichiometric ratios. For wavelengths between 675 and…
Switchable thermal waveguides in GaAs based devices
/en/research/publications/switchable-thermal-waveguides-in-gaas-based-devices
The modulation of light within microscopic devices is the key to designing versatile and powerful photonic integrated circuits (PICs). Contemporary techniques are able to generate a wide range of…
Picosecond pulses with 40 W peak power from a passively mode-locked tapered quantum well laser
/en/research/publications/picosecond-pulses-with-40-w-peak-power-from-a-passively-mode-locked-tapered-quantum-well-laser
In this letter, the authors present a monolithic edge emitting diode laser intended as a potential key component for the generation of terahertz radiation in a compact time-domain spectroscopy…
Impact of the capture time on power saturation of quantum-well diode lasers
/en/research/publications/impact-of-the-capture-time-on-power-saturation-of-quantum-well-diode-lasers
Injected electrons and holes are captured into quantum wells with a non-vanishing time. Simulation results are presented, showing that this results in a non-equilibrium of free and bound carriers in…
Simulation and analysis of high‑brightness tapered ridge‑waveguide lasers
/en/research/publications/simulation-and-analysis-of-high-brightness-tapered-ridge-waveguide-lasers-1
In this work, a simulation-based analysis of a CW-driven tapered ridge-waveguide laser design is presented. Measurements of these devices delivered high lateral brightness values of…
Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes
/en/research/publications/optimization-of-vertical-gan-drift-region-layers-for-avalanche-and-punch-through-pn-diodes
We optimized gallium nitride drift layers for high voltage and low resistance vertical electronic devices by tuning the doping concentration for a given thickness of 5 µm. The optimization…
Polymer surface functionalization using a new µ-wave driven atmospheric pressure plasma-jet device
/en/research/publications/polymer-surface-functionalization-using-a-new-micro-wave-driven-atmospheric-pressure-plasma-jet-device
A newly developed compact µ-wave plasma source was utilized for activating the surfaces of several polymers. A remarkable improvement of the surface adhesion was achieved. The plasma-treated surfaces…
Atomistic Simulations of Defects Production under Ion Irradiation in Epitaxial Graphene on SiC
/en/research/publications/atomistic-simulations-of-defects-production-under-ion-irradiation-in-epitaxial-graphene-on-sic
Using first-principles and analytical potential atomistic simulations, production of defects in epitaxial graphene (EG) on SiC upon ion irradiation for ion types and energies accessible in helium-ion…
Lateral Transistors on β-Ga2O3: Overview on Design, Technology, and Characterization
/en/research/publications/lateral-transistors-on-beta-ga2o3-overview-on-design-technology-and-characterization
This chapter reviews recent advances in the fabrication of lateral ß-Ga2O3 power transistors for high-voltage switching applications. In this regard, certain aspects in the design principles and…
Spatially resolved degradation effects in UVB LEDs stressed by constant current operation
/en/research/publications/spatially-resolved-degradation-effects-in-uvb-leds-stressed-by-constant-current-operation
InAlGaN-based UVB light-emitting diodes with an emission wavelength of 310 nm were operated at an elevated nominal current density of 200 A/cm2 and a heatsink temperature of 29°C. The…