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Digital microwave power amplifier with energy recovery
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Next-generation wireless communication infrastructure demands for high flexibility, low cost, and high efficiency. On the way to a fully digital transmitter, the FBH could achieve significant…
High-power surface-grating stabilized narrow-stripe BA lasers with beam parameter product < 2 mm×mrad
/en/research/research-news/high-power-surface-grating-stabilized-narrow-stripe-ba-lasers-with-beam-parameter-product-2-mmxmrad
The FBH has developed novel broad-area (BA) diode lasers with narrow stripes whose conversion efficiency at the operating point could be significantly increased by using an optimized vertical…
GaN HEMT modeling based on Chalmers model and pulsed S-parameter measurements
/en/research/research-news/gan-hemt-modeling-based-on-chalmers-model-and-pulsed-s-parameter-measurements
Today, GaN high electron mobility transistors (HEMTs) have demonstrated extraordinary microwave performance including high power density, high gain, and low noise.
Wissenschaftliches Kolloquium zum 60. Geburtstag von Prof. Dr. Günther Tränkle und zur Einweihung des Neubaus
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Mit einem Festkolloquium gratulierte das FBH seinem Direktor zum 60. Geburtstag und weihte ein neues Büro- und Laborgebäude ein.