Search
Rules for the search
- Only words with 2 or more characters are accepted
- Max 200 chars total
- Space is used to split words, "" can be used to search for a whole string (not indexed search then)
- AND, OR and NOT are prefix words, overruling the default operator
- +/|/- equals AND, OR and NOT as operators.
- All search words are converted to lowercase
Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy
/en/research/publications/degradation-of-algan-based-sqw-uv-c-leds-investigated-by-capacitance-deep-level-transient-spectroscopy
Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy F. Piva1, M. Buffolo1, C. De Santi1, M. Pilati1, N. Roccato1,…
Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency
/en/research/publications/buried-regrown-implant-structure-diode-lasers-with-ultra-thick-epitaxy-for-resistance-to-mounting-stress-without-loss-in-efficiency
Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency B. King, S. Arslan, A. Boni,…
Tailored in-plane thermal profiles for narrower lateral far-field in kilowatt-class 9xx nm diode laser bars
/en/research/publications/tailored-in-plane-thermal-profiles-for-narrower-lateral-far-field-in-kilowatt-class-9xx-nm-diode-laser-bars
Tailored in-plane thermal profiles for narrower lateral far-field in kilowatt-class 9xx nm diode laser bars Md.J. Miaha, M.M. Karowa, M. Elattara, D. Martina,…
9 W tapered laser diodes with high beam quality at 760 nm
/en/research/publications/9-w-tapered-laser-diodes-with-high-beam-quality-at-760-nm
9 W tapered laser diodes with high beam quality at 760 nm C. Mourikis, D. Feise, H. Wenzel, P. Della Casa, K. Paschke, G. Tränkle Ferdinand-Braun-Institut gGmbH,…
Deep learning based visual inspection of facets and p-sides for efficient quality control of diode lasers
/en/research/publications/deep-learning-based-visual-inspection-of-facets-and-p-sides-for-efficient-quality-control-of-diode-lasers
Deep learning based visual inspection of facets and p-sides for efficient quality control of diode lasers C. Zinka, M. Ekteraia, D. Martina, W. Clemensb, A. Maennelb,…
Single mode 660 nm DBR tapered laser with 1 W optical output power
/en/research/publications/single-mode-660-nm-dbr-tapered-laser-with-1-w-optical-output-power
Single mode 660 nm DBR tapered laser with 1 W optical output power G. Blume, O. Matalla, H. Wenzel, A. Maaßdorf, D. Feise, J. Fricke, P. Ressel,…
Pilot investigations on solids, liquids and gases using a portable shifted excitation Raman difference spectroscopy sensor system
/en/research/publications/pilot-investigations-on-solids-liquids-and-gases-using-a-portable-shifted-excitation-raman-difference-spectroscopy-sensor-system
Pilot investigations on solids, liquids and gases using a portable shifted excitation Raman difference spectroscopy sensor system M. Maiwald, K. Sowoidnich, B. Sumpf …
Technology roadmap for cold-atoms based quantum inertial sensor in space
/en/research/publications/technology-roadmap-for-cold-atoms-based-quantum-inertial-sensor-in-space
Recent developments in quantum technology have resulted in a new generation of sensors for measuring inertial quantities, such as acceleration and rotation. These sensors can exhibit unprecedented…
Gallium Phosphide Nanowires Grown on SiO2 by Gas-Source Molecular Beam Epitaxy
/en/research/publications/gallium-phosphide-nanowires-grown-on-sio2-by-gas-source-molecular-beam-epitaxy
GaP as one of the III–V semiconductors has an indirect band gap in its natural zinc-blend (ZB) crystal phase, limiting its applications in optoelectronics. The atomic arrangements of the ZB GaP,…
Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs
/en/research/publications/impact-of-mg-doping-on-the-performance-and-degradation-of-algan-based-uv-c-leds
We investigate the impact of Mg-doping on the performance and degradation kinetics of AlGaN-based UV-C light-emitting diodes (LEDs). By comparing LEDs from three wafers with different nominal doping…