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Advances in Physical Simulation of Transferred Substrate InP/InGaAs DHBT
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Device modeling is crucial for circuit design, thus improving device design and fabrication process. Recent advances in physical device modeling of our in-house transferred substrate InP/InGaAs…
A Drain-Lag Model for GaN HEMTs based on Chalmers Model and Pulsed S-Parameter Measurements
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Modeling the trapping effects of widely used GaN HEMTs remains a key issue. FBH's approach allows to derive an optimized set of parameters sensitive to trap states, enabling optimum large signal…
Highly efficient kW emission from long-resonator laser bars
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Diode laser bars emitting in the 9xx nm range are the preferred light sources for a wide range of industrial and scientific high-power applications. Recent progress at the FBH in epitaxial layer…
GaN-based vertical n-channel MISFETs for switching applications
/en/research/research-news/gan-based-vertical-n-channel-misfets-for-switching-applications
True vertical inversion type GaN MISFETs have been realized at FBH that demonstrate a promising technological baseline towards larger periphery vertical GaN MISFET devices for power electronics…
Optimization of AlGaN UV photodetectors for high quantum efficiency at low voltage
/en/research/research-news/optimization-of-algan-uv-photodetectors-for-high-quantum-efficiency-at-low-voltage
FBH has developed optimized AlGaN UV photodetectors with high EQE values at very low bias voltages under bottom illumination conditions by combining sufficiently thin absorber layers and…
On-chip optical microresonators interfaced with waveguides
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FBH is developing compact laser modules with very narrow linewiths suitable for future applications of quantum technologies. Besides advanced DFB laser diodes, passive optical micro components are…
Capacitance-voltage measurements – revealing a promising approach to device optimization of UV LEDs
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AlGaN-based UV LEDs are promising devices for a variety of applications such as water purification, gas sensing, and UV curing. FBH investigations open up new possibilities for degradation studies in…
A 315 GHz Signal Source in InP-DHBT Technology
/en/research/research-news/a-315-ghz-signal-source-in-inp-dhbt-technology
Frequencies beyond 300 GHz have been identified as an important frequency range for a variety of applications including future high-speed communications, radar sensors and imaging systems
1030 nm DBR tapered diode laser with over 10 W diffraction limited output power
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The rapidly growing field of biomedical imaging depends heavily on the development of ever more specialized and tailored light sources
Manufacturable 500 GHz flip-chip assemblies
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FBH has developed an innovative and manufacturable mm-wave flip-chip mounting architecture with 500 GHz bandwidth using miniaturized metal bumps in an optimized vertical flip-chip transition region…