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Progress in efforts to increase power in GaAs-based high-power diode lasers
/en/research/publications/progress-in-efforts-to-increase-power-in-gaas-based-high-power-diode-lasers
Research into power-scaling in GaAs-based broad-area lasers is summarized, focusing on 940nm single emitters, increasing power by combining triply-asymmetric high-gain epitaxial designs with regrown…
Fingerprints of carbon defects in vibrational spectra of GaN considering the isotope effect
/en/research/publications/fingerprints-of-carbon-defects-in-vibrational-spectra-of-gan-considering-the-isotope-effect
In this paper, we examine the carbon defects associated with peaks of infrared (IR) absorption and Raman scattering appearing in GaN crystals at carbon (12C) doping in the range of concentrations…
The optimal threading dislocation density of AlN template for micrometer-thick Al0.63Ga0.37N heteroepitaxy
/en/research/publications/the-optimal-threading-dislocation-density-of-aln-template-for-micrometer-thick-al063ga037n-heteroepitaxy
Growth of Si-doped AlN and of Al0.63Ga0.37N on high quality AlN templates grown by HVPE has been investigated. The strain state of Si-doped AlN is thickness-dependent due to the surface-mediated…
Capture Time as a Limit to Pulsed Power in 940 nm Broad Area Diode Lasers
/en/research/publications/capture-time-as-a-limit-to-pulsed-power-in-940-nm-broad-area-diode-lasers-1
Measurement and simulation of 940 nm lasers with strongly varied confinement factor in the quantum well are presented. The observed power saturation is little affected by confinement, instead…
Picosecond-laser-excited photoluminescence study of AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire under selective and non-selective excitation conditions
/en/research/publications/picosecond-laser-excited-photoluminescence-study-of-algan-quantum-wells-on-epitaxially-laterally-overgrown-alnsapphire-under-selective-and-non-selective-excitation-conditions
The radiative recombination efficiency (RRE) of AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire templates was investigated by picosecond-laser–excited photoluminescence (PL)…
Radiofrequency Electromagnetic Fields Cause Non-Temperature-Induced Physical and Biological Effects in Cancer Cells
/en/research/publications/radiofrequency-electromagnetic-fields-cause-non-temperature-induced-physical-and-biological-effects-in-cancer-cells
Non-temperature-induced effects of radiofrequency electromagnetic fields (RF) have been controversial for decades. Here, we established measurement techniques to prove their existence by…
Compact, Watt-class 785 nm dual-wavelength master oscillator power amplifiers
/en/research/publications/compact-watt-class-785-nm-dual-wavelength-master-oscillator-power-amplifiers
785 nm micro-integrated, dual-wavelength master oscillator power amplifiers with a footprint of 5 mm × 25 mm are presented. They are based on Y-branch distributed Bragg…
Experimental Studies into the Beam Parameter Product of GaAs High-Power Diode Lasers
/en/research/publications/experimental-studies-into-the-beam-parameter-product-of-gaas-high-power-diode-lasers-1
Experimental studies into the beam parameter product (BPP) of 940–980 nm GaAs-based high-power diode lasers are presented. Such lasers exhibit broadening far field and narrowing near field…
Comparative Study of Monolithic Integrated MMI-Coupler-Based Dual-Wavelength Lasers
/en/research/publications/comparative-study-of-monolithic-integrated-mmi-coupler-based-dual-wavelength-lasers-1-1
We present AlGaAs-based monolithically integrated dual-wavelength lasers and master-oscillator power-amplifiers emitting around 785 nm which combine a near diffraction limited beam qualitywith…
Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs
/en/research/publications/impact-of-operation-parameters-on-the-degradation-of-233-nm-algan-based-far-uvc-leds
The impact of the operation parameters current and temperature on the degradation of AlGaN-based 233 nm far-ultraviolet-C LEDs is investigated. The observed effects can be divided into two…