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Search results 1501 until 1510 of 4021

Efficiency optimization of high-power GaAs lasers by balancing confinement and threshold

/en/research/publications/efficiency-optimization-of-high-power-gaas-lasers-by-balancing-confinement-and-threshold

Studies balancing modal gain (confinement) and facet reflectivity in high power 940 nm lasers using extreme-triple-asymmetric epitaxial designs enable > 70% efficiency at 12 W…

Narrow lateral far field divergence obtained with spatially modulated broad-area lasers

/en/research/publications/narrow-lateral-far-field-divergence-obtained-with-spatially-modulated-broad-area-lasers

A laser design combining longitudinal-lateral gain-loss modulation with additional phase tailoring is presented. Under pulsed operation simulations predict a single-lobed far field angle of…

Theoretical Study of the Behavior of a DBR Laser Subject to External Optical Feedback

/en/research/publications/theoretical-study-of-the-behavior-of-a-dbr-laser-subject-to-external-optical-feedback-1

We report results of the theoretical study of the dynamic properties of distributed Bragg reflector (DBR) lasers subject to an external optical feedback provided by a longdistance mirror. We adapt…

Opticlock: Transportable and easy-to-operate optical single-ion clock

/en/research/publications/opticlock-transportable-and-easy-to-operate-optical-single-ion-clock

We report on a transportable and easy-to-operate optical clock utilizing the 2S1/2 - 2D3/2 transition of a single trapped 171Yb+ ion at 436 nm. Developed within a pilot project for quantum…

Compact Stacked Rugged GaN Low-Noise Amplifier MMIC

/en/research/publications/compact-stacked-rugged-gan-low-noise-amplifier-mmic

Rugged GaN HEMT LNAs are well established components for high-performance microwave receivers. In a previous work, we introduced the concept of a stacked circuit topology, which allows for a power…

Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing

/en/research/publications/role-of-oxygen-diffusion-in-the-dislocation-reduction-of-epitaxial-aln-on-sapphire-during-high-temperature-annealing

Recovery of epitaxial AlN films on sapphire at high temperatures is now an established process to produce pseudo-substrates with high crystalline perfection, which can be used to grow epitaxial…

Switching behavior and dynamic on-resistance of lateral β-Ga2O3 MOSFETs up to 400 V

/en/research/publications/switching-behavior-and-dynamic-on-resistance-of-lateral-beta-ga2o3-mosfets-up-to-400nbspv-1

This paper studies switching behavior and dynamic on-state characteristics of lateral 10 mm depletion-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs). Improvements…

An X- to Ka-band Single-Pole-Double-Throw Switch with Good Power Handling Capability

/en/research/publications/an-x-to-ka-band-single-pole-double-throw-switch-with-good-power-handling-capability-1

In this paper, we present a single-pole-double-throw (SPDT) switch design covering X- to Ka-band using series-shunt topology. The stacked-FET configuration was adopted for the series- and shunt-arms…

Atomic surface control of Ge(100) in MOCVD reactors coated with (Ga)As residuals

/en/research/publications/atomic-surface-control-of-ge100-in-mocvd-reactors-coated-with-gaas-residuals

Heteroepitaxy of planar, low-defect III-V semiconductor layers on Ge(100) requires a single-domain substrate surface, where dimer rows are aligned in parallel on atomically well-ordered terraces,…

Quantification of losses in bent waveguides within DBR-RW laser diodes emitting at 785 nm

/en/research/publications/quantification-of-losses-in-bent-waveguides-within-dbr-rw-laser-diodes-emitting-at-785-nm

An experimental study of straight and bent distributed Bragg reflector (DBR) ridge waveguide (RW) lasers and Fabry–Pérot (FP) RW lasers emitting at 785 nm is presented. To determine the losses…