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On the carrier kinetics in Al(In)GaN quantum wells stressed by high current densities
/en/research/publications/on-the-carrier-kinetics-in-alingan-quantum-wells-stressed-by-high-current-densities
On the carrier kinetics in Al(In)GaN quantum wells stressed by high current densities J.W. Tomma, J. Ruschelb, J. Glaabb, F. Mahlera, T. Kolbeb, S. Einfeldtb …
Alternating dual-wavelength second harmonic generation at 532 nm using a Y-branch distributed Bragg reflector diode laser
/en/research/publications/alternating-dual-wavelength-second-harmonic-generation-at-532-nm-using-a-y-branch-distributed-bragg-reflector-diode-laser
Alternating dual-wavelength second harmonic generation at 532 nm using a Y-branch distributed Bragg reflector diode laser A. Müller and B. Sumpf Ferdinand-Braun-Institut gGmbH,…
Epitaxial design progress for high power, efficiency, and brightness in 970 nm broad area lasers
/en/research/publications/epitaxial-design-progress-for-high-power-efficiency-and-brightness-in-970-nm-broad-area-lasers
Epitaxial design progress for high power, efficiency, and brightness in 970 nm broad area lasers A. Boni, S. Arslan, G. Erbert, P. Della Casa, D. Martin, P. Crump …
High-power, high-beam quality miniaturized diode laser module for direct material processing at 980 nm
/en/research/publications/high-power-high-beam-quality-miniaturized-diode-laser-module-for-direct-material-processing-at-980-nm
High-power, high-beam quality miniaturized diode laser module for direct material processing at 980 nm P. Hildenstein1, A. Sahm1, D. Feise1, D. Jedrzejczyk2, K. Paschke1,…
Single mode 660 nm master-oscillator power-amplifier with 500 mW optical output power
/en/research/publications/single-mode-660-nm-master-oscillator-power-amplifier-with-500-mw-optical-output-power
Single mode 660 nm master-oscillator power-amplifier with 500 mW optical output power G. Blume, C. Kaspari, J. Pohl, D. Feise, H. Wenzel, J. Fricke, P. Ressel,…
Translation of SERS Sensing to Real-World Settings through the Combination with Shifted-Excitation Raman Difference Spectroscopy (SERDS)
/en/research/publications/translation-of-sers-sensing-to-real-world-settings-through-the-combination-with-shifted-excitation-raman-difference-spectroscopy-serds
Translation of SERS Sensing to Real-World Settings through the Combination with Shifted-Excitation Raman Difference Spectroscopy (SERDS) P. Strobbiaa,b,#, V. Cupil-Garciaa,c,…
Optical clock technologies for global navigation satellite systems
/en/research/publications/optical-clock-technologies-for-global-navigation-satellite-systems
Future generations of global navigation satellite systems (GNSSs) can benefit from optical technologies. Especially optical clocks could back-up or replace the currently used microwave clocks, having…
Noninvasive measurement of the 308 nm LED-based UVB protection factor of sunscreens
/en/research/publications/noninvasive-measurement-of-the-308-nm-led-based-uvb-protection-factor-of-sunscreens
The current method for determining the sun protection factor (SPF) requires erythema formation. Noninvasive alternatives have recently been suggested by several groups. Our group previously developed…
Improved lateral brightness in 940-nm high-power broad-area diode lasers using enhanced self-aligned structure
/en/research/publications/improved-lateral-brightness-in-940-nm-high-power-broad-area-diode-lasers-using-enhanced-self-aligned-structure
We present high-power broad-area diode lasers with improved beam quality, reduced threshold current, and increased efficiency, realized by implementing an enhanced self-aligned lateral structure.
Threshold voltage shift induced by intrinsic stress in gate metal of AlGaN/GaN HFET
/en/research/publications/threshold-voltage-shift-induced-by-intrinsic-stress-in-gate-metal-of-algangan-hfet
Mechanical stress/strain is altering the charging properties of piezoelectric materials. For AlGaN and GaN heterostructures, this phenomenon has been described theoretically (Ambacher et al 2000 J.…