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Solar-blind AlxGa1-xN MSM photodetectors on patterned AlN/sapphire templates with 0.4 < x < 1
/en/research/publications/solar-blind-alxga1-xn-msm-photodetectors-on-patterned-alnsapphire-templates-with-04-lt-x-lt-1
Solar-blind Schottky-type metal-semiconductor-metal (MSM) photodetectors (PDs) based on AlxGa1-xN absorber layers with x varying between 0.4 and 1 are investigated. The impact of the epitaxial lateral
Anisotropic Responsivity of AlGaN Metal-Semiconductor-Metal Photodetectors on Epitaxial Laterally Overgrown AlN/Sapphire Templates
/en/research/publications/anisotropic-responsivity-of-algan-metal-semiconductor-metal-photodetectors-on-epitaxial-laterally-overgrown-alnsapphire-templates
Al0.4Ga0.6N metal-semiconductor-metal photodetectors on epitaxial laterally overgrown (ELO) AlN/sapphire templates show anisotropic device characteristics depending on the orientation of the electrode
Compact green-diode-based lasers for biophotonic bioimaging
/en/research/publications/compact-green-diode-based-lasers-for-biophotonic-bioimaging
Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers.
Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes
/en/research/publications/influence-of-barrier-growth-schemes-on-the-structural-properties-and-thresholds-of-ingan-quantum-well-laser-diodes
The influence of the (In)GaN quantum barrier growth temperature on the structural properties of the active region of blue-violet laser diodes has been investigated. Therefore, multiple quantum well st
Wavelength stabilized ns-MOPA diode laser system with 16 W peak power and a spectral line width below 10 pm
/en/research/publications/wavelength-stabilized-ns-mopa-diode-laser-system-with-16-w-peak-power-and-a-spectral-line-width-below-10-pm
A master oscillator power amplifier system for the generation of ns-pulses with high peak power, stabilized wavelength and narrow spectral line width will be presented. The master oscillator is a dist
Comparative theoretical and experimental studies of two designs of high-power diode lasers
/en/research/publications/comparative-theoretical-and-experimental-studies-of-two-designs-of-high-power-diode-lasers
Design and technology developments targeted at increasing both power conversion efficiency and optical output power of GaAs-based diode lasers are under intense study worldwide, driven by the demands
Miniaturized highly brilliant diode laser modules for future display applications
/en/research/publications/miniaturized-highly-brilliant-diode-laser-modules-for-future-display-applications
We demonstrate diode laser modules with high spectral radiance larger than 1 GW/cm2/sr/nm in the visible spectral range. These highly brilliant laser light sources enable the development of next-
940nm Broad Area Diode Lasers Optimized for High Pulse-Power Fiber Coupled Applications
/en/research/publications/940nm-broad-area-diode-lasers-optimized-for-high-pulse-power-fiber-coupled-applications
Diode lasers with 400 µm stripe widths measured in pulsed-current mode are shown to reach peak (saturation) powers of 60 W for 1 ms pulses (60 mJ) and 189 W for 300 ns pu
Wavelength stabilized 785 nm DBR-ridge waveguide lasers with an output power of up to 215 mW
/en/research/publications/wavelength-stabilized-785-nm-dbr-ridge-waveguide-lasers-with-an-output-power-of-up-to-215-mw
Wavelength stabilized distributed Bragg reflector (DBR) diode lasers at an emission wavelength of 785 nm will be presented. The devices have a 14 nm thick GaAsP single quantum well as active
Narrow Stripe Broad Area Lasers With High Order Distributed Feedback Surface Gratings
/en/research/publications/narrow-stripe-broad-area-lasers-with-high-order-distributed-feedback-surface-gratings
GaAs-based narrow-stripe broad-area lasers with integrated surface gratings are shown to operate with high power and efficiency, low beam parameter product (BPP), and narrow spectra. These distributed